公开(公告)号：US20150225841A1

公开(公告)日：2015-08-13

申请号：US14615458

申请日：2015-02-06

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： ANTHONY PAUL WILBY ,  STEPHEN R. BURGESS

IPC: C23C14/34 ,  C23C14/54 ,  C23C14/50 ,  H01J37/34

CPC classification number: C23C14/3492 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32724 ,  H01J37/34 ,  H01J37/3488

Abstract: A method is for processing a substrate by physical vapour deposition (PVD). In the method, the substrate is supplied with a cooling gas so that during the PVD process, the substrate is lifted from a substrate support.

Abstract translation: 一种通过物理气相沉积（PVD）处理衬底的方法。 在该方法中，向衬底供应冷却气体，使得在PVD工艺期间，衬底从衬底支撑件提升。

公开(公告)号：US20140045340A1

公开(公告)日：2014-02-13

申请号：US13965254

申请日：2013-08-13

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  ANTHONY P. WILBY

IPC: H01L21/02 ,  C23C16/455 ,  C23C14/34

CPC classification number: H01L21/02104 ,  C23C14/34 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/67253

Abstract: A method of processing a semiconductor workpiece includes placing a back surface of the workpiece on a workpiece support in a chamber so that the front surface of the workpiece faces into the chamber for processing, and the back surface is in fluid communication with a back region having an associated back gas pressure. The method further includes performing a workpiece processing step at a first chamber pressure Pc1 and a first back pressure Pb1, wherein Pc1 and Pb1 give rise to a pressure differential, Pb1-Pc1, and performing a workpiece cooling step at a second chamber pressure Pc2 and a second back pressure Pb2, wherein Pc2 and Pb2 are higher than Pc1 and Pb1, respectively.

Abstract translation: 一种处理半导体工件的方法包括将工件的后表面放置在腔室中的工件支撑件上，使得工件的前表面面向腔室进行加工，并且后表面与具有 相关的后气体压力。 该方法还包括以第一室压Pc1和第一背压Pb1执行工件处理步骤，其中Pc1和Pb1产生压差Pb1-Pc1，并在第二室压力Pc2下执行工件冷却步骤， 第二背压Pb2，其中Pc2和Pb2分别高于Pc1和Pb1。