公开(公告)号：US20160148787A1

公开(公告)日：2016-05-26

申请号：US14951009

申请日：2015-11-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY

IPC: H01J37/32 ,  H01J37/18 ,  C23C14/34

CPC classification number: H01J37/32467 ,  C23C14/046 ,  C23C14/34 ,  H01J37/18 ,  H01J37/321 ,  H01J37/32862 ,  H01J37/34

Abstract: A plasma etching apparatus is for etching a substrate and includes at least one chamber, a substrate support positioned within the at least one chamber, and a plasma production device for producing a plasma for use in etching the substrate. The plasma production device comprises an electrically conductive coil which is positioned within the at least one chamber, and the coil is formed from a metallic material which can be sputtered onto an interior surface of the at least one chamber.

Abstract translation: 等离子体蚀刻装置用于蚀刻基板，并且包括至少一个室，位于至少一个室内的基板支撑件，以及用于产生用于蚀刻基板的等离子体的等离子体生成装置。 等离子体生产装置包括位于至少一个室内的导电线圈，并且线圈由能够溅射到至少一个室的内表面上的金属材料形成。

公开(公告)号：US20160265108A1

公开(公告)日：2016-09-15

申请号：US15064631

申请日：2016-03-09

Applicant: SPTS Technologies Limited

Inventor： DANIEL T. ARCHARD ,  STEPHEN R. BURGESS ,  MARK I. CARRUTHERS ,  ANDREW PRICE ,  KEITH E. BUCHANAN ,  KATHERINE CROOK

IPC: C23C16/455 ,  C23C16/513

CPC classification number: C23C16/455 ,  C23C16/513 ,  H01J37/32633 ,  H01J37/32834

Abstract: A plasma-enhanced chemical vapour deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.

Abstract translation: 等离子体增强化学气相沉积（PE-CVD）装置包括：腔室，包括圆周泵浦通道，设置在腔室内的衬底支撑件，用于将气体引入腔室的一个或多个气体入口;用于产生等离子体的等离子体生产装置 在腔室中，以及位于腔室中的上部和下部元件。 上部元件与衬底支撑件间隔开以限制等离子体并且限定第一周向泵送间隙，并且上部元件用作圆周泵送通道的径向向内的壁。 上部和下部元件径向间隔开以限定作为周向泵送通道入口的第二圆周泵送间隙，其中第二圆周泵送间隙比第一圆周泵送间隙宽。

公开(公告)号：US20150125375A1

公开(公告)日：2015-05-07

申请号：US14532098

申请日：2014-11-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： YUN ZHOU ,  RHONDA HYNDMAN ,  STEPHEN R. BURGESS

IPC: C23C14/00 ,  C23C14/35 ,  C01B33/12 ,  C23C14/34

CPC classification number: C23C14/0036 ,  C01B33/12 ,  C23C14/10 ,  C23C14/3485 ,  C23C14/35

Abstract: According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.

Abstract translation: 根据本发明，通过使用基本上由氧和氪组成的溅射气体混合物的脉冲DC反应溅射，将SiO 2沉积到衬底上的方法。

公开(公告)号：US20190272980A1

公开(公告)日：2019-09-05

申请号：US16418447

申请日：2019-05-21

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY

IPC: H01J37/32 ,  C23C14/04 ,  H01J37/34 ,  C23C14/34 ,  H01J37/18

Abstract: A method is for cleaning a plasma etching apparatus of the type used to etch a substrate and having at least one chamber. The method includes sputtering a metallic material from an electrically conductive coil which is positioned within the at least one chamber onto an interior surface of the at least one chamber to perform a cleaning function.

公开(公告)号：US20160379807A1

公开(公告)日：2016-12-29

申请号：US15190722

申请日：2016-06-23

Applicant: SPTS Technologies Limited

Inventor： ANTHONY PAUL WILBY ,  STEPHEN R. BURGESS ,  IAN MONCRIEFF ,  PAUL DENSLEY ,  CLIVE L. WIDDICKS ,  PAUL RICH ,  ADRIAN THOMAS

IPC: H01J37/32 ,  C23C14/34 ,  H01L21/67

CPC classification number: H01J37/32495 ,  C23C14/34 ,  H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

Abstract translation: 用于蚀刻衬底的ICP等离子体蚀刻装置包括至少一个室，位于室内的衬底支撑件，用于产生用于蚀刻衬底的等离子体的等离子体生成装置，以及围绕衬底支撑件的保护结构， 在使用中，保护基板的周边部分免于材料的不希望的沉积。 保护结构被布置成电偏压并且由金属材料形成，使得金属材料可以从保护结构溅射到室的内表面上，以将颗粒材料粘附到内表面。

公开(公告)号：US20160289815A1

公开(公告)日：2016-10-06

申请号：US15084574

申请日：2016-03-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  RHONDA HYNDMAN ,  AMIT RASTOGI ,  EDUARDO PAULO LIMA ,  CLIVE L. WIDDICKS ,  PAUL RICH ,  SCOTT HAYMORE ,  DANIEL COOK

IPC: C23C14/06 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC classification number: C23C14/0641 ,  C23C14/0617 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32669 ,  H01J37/3405 ,  H01J37/3429 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3461 ,  H01J37/3467 ,  H01J37/3476

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract translation: 一种方法是通过用产生一个或多个初级磁场的脉冲DC磁控管装置的脉冲DC磁控溅射将电介质材料沉积在腔室中的衬底上。 在该方法中，溅射材料从靶溅射，其中靶和衬底间隔2.5至10cm的间隔，并且在室内产生二次磁场，这引起由脉冲DC产生的等离子体 磁控管装置朝向腔室的一个或多个壁膨胀。

公开(公告)号：US20160155652A1

公开(公告)日：2016-06-02

申请号：US14950879

申请日：2015-11-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY

IPC: H01L21/67 ,  F24C7/04 ,  H01L21/324

CPC classification number: H01L21/67276 ,  F24C7/04 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67748

Abstract: A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus. The method further includes unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed. The degassing of the semiconductor substrates is performed at pressure of less than 10−4 Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.

Abstract translation: 一种脱气半导体衬底的方法包括：将多个半导体衬底顺次加载到脱气装置中，并且平行地对半导体衬底进行脱气，每个半导体衬底的脱气开始于与半导体衬底被加载的时间相关的不同时间 脱气装置。 该方法还包括当半导体衬底脱气时从脱气装置卸载半导体衬底，而后续装载的半导体衬底仍被脱气。 在小于10-4乇的压力下进行半导体衬底的脱气，并且在半导体衬底的脱气期间连续地泵送脱气装置。

公开(公告)号：US20170178901A1

公开(公告)日：2017-06-22

申请号：US15383162

申请日：2016-12-19

Applicant: SPTS Technologies Limited

Inventor： KATHRINE CROOK ,  STEPHEN R. BURGESS ,  ANDREW PRICE

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02304 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02381 ,  H01L29/0649

Abstract: A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process, and depositing the dielectric layer onto the adhesion layer by a second PECVD process. The first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of O2 or with O2 introduced into the process at a flow rate of 250 sccm or less.

公开(公告)号：US20170104465A1

公开(公告)日：2017-04-13

申请号：US15286283

申请日：2016-10-05

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  RHONDA HYNDMAN ,  AMIT RASTOGI ,  SCOTT HAYMORE ,  CONSTANINE FRAGOS

IPC: H03H3/02 ,  H03H9/02 ,  C23C14/34 ,  C23C14/00 ,  C23C14/14

Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.

公开(公告)号：US20160240351A1

公开(公告)日：2016-08-18

申请号：US15016613

申请日：2016-02-05

Applicant: SPTS Technologies Limited

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY ,  CLIVE L. WIDDICKS ,  IAN MONCRIEFF ,  P. DENSLEY

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32477 ,  H01J2237/0262 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/3065

Abstract: A plasma producing apparatus for plasma processing a substrate Includes a chamber having an interior surface, a plasma production device for producing an inductively coupled plasma within the chamber, a substrate support for supporting the substrate during plasma processing, and a Faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing. The plasma production device includes an antenna and a RF power supply for supplying RF power to the antenna with a polarity which is alternated at a frequency of less than or equal to 1000 Hz.

Abstract translation: 用于等离子体处理衬底的等离子体制造装置包括具有内表面的室，用于在室内产生电感耦合等离子体的等离子体生产装置，用于在等离子体处理期间支撑衬底的衬底支撑件和设置在腔室内的法拉第屏蔽 用于通过等离子体处理将至少部分内表面与从衬底去除的材料进行屏蔽。 等离子体生产装置包括天线和RF电源，用于以小于或等于1000Hz的频率交替的极性向天线提供RF功率。