公开(公告)号：US20160148787A1

公开(公告)日：2016-05-26

申请号：US14951009

申请日：2015-11-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY

IPC: H01J37/32 ,  H01J37/18 ,  C23C14/34

CPC classification number: H01J37/32467 ,  C23C14/046 ,  C23C14/34 ,  H01J37/18 ,  H01J37/321 ,  H01J37/32862 ,  H01J37/34

Abstract: A plasma etching apparatus is for etching a substrate and includes at least one chamber, a substrate support positioned within the at least one chamber, and a plasma production device for producing a plasma for use in etching the substrate. The plasma production device comprises an electrically conductive coil which is positioned within the at least one chamber, and the coil is formed from a metallic material which can be sputtered onto an interior surface of the at least one chamber.

Abstract translation: 等离子体蚀刻装置用于蚀刻基板，并且包括至少一个室，位于至少一个室内的基板支撑件，以及用于产生用于蚀刻基板的等离子体的等离子体生成装置。 等离子体生产装置包括位于至少一个室内的导电线圈，并且线圈由能够溅射到至少一个室的内表面上的金属材料形成。

公开(公告)号：US20160240351A1

公开(公告)日：2016-08-18

申请号：US15016613

申请日：2016-02-05

Applicant: SPTS Technologies Limited

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY ,  CLIVE L. WIDDICKS ,  IAN MONCRIEFF ,  P. DENSLEY

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32477 ,  H01J2237/0262 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/3065

Abstract: A plasma producing apparatus for plasma processing a substrate Includes a chamber having an interior surface, a plasma production device for producing an inductively coupled plasma within the chamber, a substrate support for supporting the substrate during plasma processing, and a Faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing. The plasma production device includes an antenna and a RF power supply for supplying RF power to the antenna with a polarity which is alternated at a frequency of less than or equal to 1000 Hz.

Abstract translation: 用于等离子体处理衬底的等离子体制造装置包括具有内表面的室，用于在室内产生电感耦合等离子体的等离子体生产装置，用于在等离子体处理期间支撑衬底的衬底支撑件和设置在腔室内的法拉第屏蔽 用于通过等离子体处理将至少部分内表面与从衬底去除的材料进行屏蔽。 等离子体生产装置包括天线和RF电源，用于以小于或等于1000Hz的频率交替的极性向天线提供RF功率。

公开(公告)号：US20150225841A1

公开(公告)日：2015-08-13

申请号：US14615458

申请日：2015-02-06

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： ANTHONY PAUL WILBY ,  STEPHEN R. BURGESS

IPC: C23C14/34 ,  C23C14/54 ,  C23C14/50 ,  H01J37/34

CPC classification number: C23C14/3492 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32724 ,  H01J37/34 ,  H01J37/3488

Abstract: A method is for processing a substrate by physical vapour deposition (PVD). In the method, the substrate is supplied with a cooling gas so that during the PVD process, the substrate is lifted from a substrate support.

Abstract translation: 一种通过物理气相沉积（PVD）处理衬底的方法。 在该方法中，向衬底供应冷却气体，使得在PVD工艺期间，衬底从衬底支撑件提升。

公开(公告)号：US20190272980A1

公开(公告)日：2019-09-05

申请号：US16418447

申请日：2019-05-21

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY

IPC: H01J37/32 ,  C23C14/04 ,  H01J37/34 ,  C23C14/34 ,  H01J37/18

Abstract: A method is for cleaning a plasma etching apparatus of the type used to etch a substrate and having at least one chamber. The method includes sputtering a metallic material from an electrically conductive coil which is positioned within the at least one chamber onto an interior surface of the at least one chamber to perform a cleaning function.

公开(公告)号：US20160379807A1

公开(公告)日：2016-12-29

申请号：US15190722

申请日：2016-06-23

Applicant: SPTS Technologies Limited

Inventor： ANTHONY PAUL WILBY ,  STEPHEN R. BURGESS ,  IAN MONCRIEFF ,  PAUL DENSLEY ,  CLIVE L. WIDDICKS ,  PAUL RICH ,  ADRIAN THOMAS

IPC: H01J37/32 ,  C23C14/34 ,  H01L21/67

CPC classification number: H01J37/32495 ,  C23C14/34 ,  H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

Abstract translation: 用于蚀刻衬底的ICP等离子体蚀刻装置包括至少一个室，位于室内的衬底支撑件，用于产生用于蚀刻衬底的等离子体的等离子体生成装置，以及围绕衬底支撑件的保护结构， 在使用中，保护基板的周边部分免于材料的不希望的沉积。 保护结构被布置成电偏压并且由金属材料形成，使得金属材料可以从保护结构溅射到室的内表面上，以将颗粒材料粘附到内表面。

公开(公告)号：US20160155652A1

公开(公告)日：2016-06-02

申请号：US14950879

申请日：2015-11-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY

IPC: H01L21/67 ,  F24C7/04 ,  H01L21/324

CPC classification number: H01L21/67276 ,  F24C7/04 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67748

Abstract: A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus. The method further includes unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed. The degassing of the semiconductor substrates is performed at pressure of less than 10−4 Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.

Abstract translation: 一种脱气半导体衬底的方法包括：将多个半导体衬底顺次加载到脱气装置中，并且平行地对半导体衬底进行脱气，每个半导体衬底的脱气开始于与半导体衬底被加载的时间相关的不同时间 脱气装置。 该方法还包括当半导体衬底脱气时从脱气装置卸载半导体衬底，而后续装载的半导体衬底仍被脱气。 在小于10-4乇的压力下进行半导体衬底的脱气，并且在半导体衬底的脱气期间连续地泵送脱气装置。