INTERCONNECTION SUBSTRATE AND METHOD OF MANUFACTURING SUCH A SUBSTRATE

    公开(公告)号:US20230290712A1

    公开(公告)日:2023-09-14

    申请号:US18118513

    申请日:2023-03-07

    Abstract: An interconnection substrate includes a thermomechanical support crossed by at least one electric interconnection hole. A first interconnection network is formed on a first surface of the thermomechanical support and a second interconnection network is formed on a second surface of the thermomechanical support. Each interconnection network includes and interconnection level formed by at least one metal track from which at least one metal via extends. The at least one metal track and the at least one metal via are embedded in an insulator layer so that the at least one metal via is flush with a surface of the insulator layer most distant from the thermomechanical support. At least one metal track protrudes from the insulator layer of the last interconnection level. The metal vias are configured to electrically couple together two adjacent levels and/or the last level with the at least one protruding metal track.

    PACKAGE FOR INTEGRATED CIRCUIT AND MANUFACTURING METHOD

    公开(公告)号:US20220157679A1

    公开(公告)日:2022-05-19

    申请号:US17522327

    申请日:2021-11-09

    Inventor: Jerome LOPEZ

    Abstract: An encapsulation hood is fastened onto electrically conductive zones of a support substrate using springs. Each spring has a region in contact with an electrically conductive path contained in the encapsulation hood and another region in contact with a corresponding one of the electrically conductive zones. The fastening of the part of the encapsulation hood onto the support substrate compresses the springs and further utilizes a bead of insulating glue located between the compressed springs.

    CENTRIPETAL BUMPING LAYOUT AND METHOD
    14.
    发明申请

    公开(公告)号:US20200335466A1

    公开(公告)日:2020-10-22

    申请号:US16847934

    申请日:2020-04-14

    Abstract: A bumping matrix includes many bumps, wherein each bump is rotationally asymmetric in a plane of the bumping matrix. The bumps are orientated in a centripetal arrangement. Bumps in a first portion of the bumping matrix have a first pitch in a first axis and bumps in a second portion of the bumping matrix have a second pitch in the first axis. The second pitch is different from the first pitch. Bumps have an oblong shape with a longer diameter and a shorter diameter. The centripetal arrangement orients the longer diameter of the bumps is a direction radially extending from a center of the bumping matrix.

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