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    Semiconductor integrated device with electrical contacts between stacked dies and corresponding manufacturing process
    11.
    发明授权
    Semiconductor integrated device with electrical contacts between stacked dies and corresponding manufacturing process 有权

    公开(公告)号：US10906801B2

    公开(公告)日：2021-02-02

    申请号：US16509367

    申请日：2019-07-11

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Enri Duqi ,  Lorenzo Baldo ,  Domenico Giusti

    IPC: B81C1/00 ,  B81B7/00

    Abstract: An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.

    MEMS device including a capacitive pressure sensor and manufacturing process thereof
    13.
    发明授权
    MEMS device including a capacitive pressure sensor and manufacturing process thereof 有权

    公开(公告)号：US10407301B2

    公开(公告)日：2019-09-10

    申请号：US15870429

    申请日：2018-01-12

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Enri Duqi ,  Lorenzo Baldo ,  Roberto Carminati

    IPC: B81B3/00 ,  B81C1/00 ,  B81B7/02

    Abstract: MEMS device, in which a body made of semiconductor material contains a chamber, and a first column inside the chamber. A cap of semiconductor material is attached to the body and forms a first membrane, a first cavity and a first channel. The chamber is closed on the side of the cap. The first membrane, the first cavity, the first channel and the first column form a capacitive pressure sensor structure. The first membrane is arranged between the first cavity and the second face, the first channel extends between the first cavity and the first face or between the first cavity and the second face and the first column extends towards the first membrane and forms, along with the first membrane, plates of a first capacitor element.

    Semiconductor integrated device with electrical contacts between stacked dies and corresponding manufacturing process
    14.
    发明授权
    Semiconductor integrated device with electrical contacts between stacked dies and corresponding manufacturing process 有权

    公开(公告)号：US10392245B2

    公开(公告)日：2019-08-27

    申请号：US15591652

    申请日：2017-05-10

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Enri Duqi ,  Lorenzo Baldo ,  Domenico Giusti

    IPC: B81C1/00 ,  B81B7/00

    Abstract: An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.

    Process for manufacturing a MEMS pressure sensor, and corresponding MEMS pressure sensor
    16.
    发明授权
    Process for manufacturing a MEMS pressure sensor, and corresponding MEMS pressure sensor 有权

    公开(公告)号：US10048148B2

    公开(公告)日：2018-08-14

    申请号：US15276617

    申请日：2016-09-26

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Lorenzo Baldo ,  Sarah Zerbini ,  Enri Duqi

    IPC: G01P15/08 ,  H01L21/00 ,  G01L9/00 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00

    Abstract: A process for manufacturing a MEMS pressure sensor having a micromechanical structure envisages: providing a wafer having a substrate of semiconductor material and a top surface; forming a buried cavity entirely contained within the substrate and separated from the top surface by a membrane suspended above the buried cavity; forming a fluidic-communication access for fluidic communication of the membrane with an external environment, set at a pressure the value of which has to be determined; forming, suspended above the membrane, a plate region made of conductive material, separated from the membrane by an empty space; and forming electrical-contact elements for electrical connection of the membrane and of the plate region, which are designed to form the plates of a sensing capacitor, the value of capacitance of which is indicative of the value of pressure to be detected. A corresponding MEMS pressure sensor having the micromechanical structure is moreover described.

    Radiation sensor with an integrated mechanical optical modulator and related manufacturing process
    17.
    发明授权
    Radiation sensor with an integrated mechanical optical modulator and related manufacturing process 有权

    公开(公告)号：US12066324B2

    公开(公告)日：2024-08-20

    申请号：US17530785

    申请日：2021-11-19

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Michele Vaiana ,  Enri Duqi ,  Maria Eloisa Castagna

    IPC: G01J1/36 ,  H01L33/46

    CPC classification number: G01J1/36 ,  H01L33/465 ,  G01J2001/363

    Abstract: Radiation sensor including a detection assembly and a chopper assembly, which are mechanically coupled to delimit a main cavity; and wherein the chopper assembly includes: a suspended movable structure, which extends in the main cavity; and an actuation structure, which is electrically controllable to cause a change of position of the suspended movable structure. The detection unit includes a detection structure, which faces the main cavity and includes a number of detection devices. The suspended movable structure includes a first shield of conductive material, which shields the detection devices from the radiation, the shielding of the detection devices being a function of the position of the suspended movable structure.

    Micro-electro-mechanical device having two buried cavities and manufacturing process thereof
    20.
    发明授权
    Micro-electro-mechanical device having two buried cavities and manufacturing process thereof 有权

    公开(公告)号：US10676347B2

    公开(公告)日：2020-06-09

    申请号：US15866380

    申请日：2018-01-09

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Enri Duqi ,  Lorenzo Baldo ,  Marco Del Sarto ,  Mikel Azpeitia Urquia

    IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00

    Abstract: A micro-electro-mechanical device, comprising a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region facing the first buried cavity; a second cavity facing the first buried cavity; a decoupling trench extending from the monolithic body and separating the sensitive region from a peripheral portion of the monolithic body; a cap die, forming an ASIC, bonded to and facing the first face of the monolithic body; and a first gap between the cap die and the monolithic body. The device also comprises at least one spacer element between the monolithic body and the cap die; at least one stopper element between the monolithic body and the cap die; and a second gap between the stopper element and one between the monolithic body and the cap die. The second gap is smaller than the first gap.

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