公开(公告)号：US20230282757A1

公开(公告)日：2023-09-07

申请号：US18181409

申请日：2023-03-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNÁ ,  Gabriele BELLOCCHI ,  Paolo BADALÁ ,  Isodiana CRUPI

IPC: H01L31/101 ,  H01L31/0224 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/1016 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/103 ,  H01L31/1812 ,  H01L31/1864 ,  H01L31/1884

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

公开(公告)号：US20220157807A1

公开(公告)日：2022-05-19

申请号：US17591534

申请日：2022-02-02

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe SAGGIO ,  Simone RASCUNÁ

IPC: H01L27/06 ,  H01L29/872 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L21/04 ,  H01L29/08 ,  H01L29/423

Abstract: An integrated MOSFET device is formed in a body of silicon carbide and with a first type of conductivity. The body accommodates a first body region, with a second type of conductivity; a JFET region adjacent to the first body region; a first source region, with the first type of conductivity, extending into the interior of the first body region; an implanted structure, with the second type of conductivity, extending into the interior of the JFET region. An isolated gate structure lies partially over the first body region, the first source region and the JFET region. A first metallization layer extends over the first surface and forms, in direct contact with the implanted structure and with the JFET region, a JBS diode.

公开(公告)号：US20210399154A1

公开(公告)日：2021-12-23

申请号：US17344558

申请日：2021-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone RASCUNÁ ,  Gabriele BELLOCCHI ,  Paolo BADALÁ ,  Isodiana CRUPI

IPC: H01L31/101 ,  H01L31/103 ,  H01L31/0224 ,  H01L31/18

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.