公开(公告)号：US10656331B2

公开(公告)日：2020-05-19

申请号：US16156601

申请日：2018-10-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic Boeuf ,  Charles Baudot

IPC: G02B6/12 ,  G02B6/30 ,  G02B6/124 ,  G02B6/122 ,  G02B6/126 ,  G02B6/27 ,  G02B6/34 ,  G02B6/42

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US20190049664A1

公开(公告)日：2019-02-14

申请号：US16156601

申请日：2018-10-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic Boeuf ,  Charles Baudot

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/126 ,  G02B6/27

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US20170213910A1

公开(公告)日：2017-07-27

申请号：US15483299

申请日：2017-04-10

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Frederic Boeuf ,  Olivier Weber

IPC: H01L29/78 ,  H01L29/16 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06 ,  H01L29/161

CPC classification number: H01L29/7847 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02667 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/0611 ,  H01L29/0642 ,  H01L29/16 ,  H01L29/161 ,  H01L29/7838

Abstract: A substrate of the silicon on insulator type includes a semi-conducting film disposed on a buried insulating layer which is disposed on an unstressed silicon support substrate. The semi-conducting film includes a first film zone of tensile-stressed silicon and a second film zone of tensile-relaxed silicon. Openings through the buried insulating layer permit access to the unstressed silicon support substrate under the first and second film zones. An N channel transistor is formed from the first film zone and a P channel transistor is formed from the second film zone. The second film zone may comprise germanium enriched silicon forming a compressive-stressed region.

公开(公告)号：US11709315B2

公开(公告)日：2023-07-25

申请号：US17540626

申请日：2021-12-02

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic Boeuf ,  Charles Baudot

IPC: G02B6/12 ,  G02B6/30 ,  G02B6/124 ,  G02B6/122 ,  G02B6/126 ,  G02B6/27 ,  G02B6/34 ,  G02B6/42

CPC classification number: G02B6/12002 ,  G02B6/122 ,  G02B6/124 ,  G02B6/12004 ,  G02B6/126 ,  G02B6/2773 ,  G02B6/30 ,  G02B6/34 ,  G02B6/4204 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12116 ,  G02B2006/12147

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US11231548B2

公开(公告)日：2022-01-25

申请号：US16847189

申请日：2020-04-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic Boeuf ,  Charles Baudot

IPC: G02B6/12 ,  G02B6/27 ,  G02B6/30 ,  G02B6/124 ,  G02B6/122 ,  G02B6/126 ,  G02B6/34 ,  G02B6/42

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US11165220B2

公开(公告)日：2021-11-02

申请号：US16757308

申请日：2017-10-19

Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  STMicroelectronics (Crolles 2) SAS ,  Universite Paris-Saclay

Inventor： Anas Elbaz ,  Moustafa El Kurdi ,  Abdelhanin Aassime ,  Philippe Boucaud ,  Frederic Boeuf

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/02 ,  H01S5/10 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34

Abstract: A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.

公开(公告)号：US10686297B2

公开(公告)日：2020-06-16

申请号：US15555639

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  Centre National de la Recherche Scientifique ,  Universite Paris SUD

Inventor： Mathias Prost ,  Moustafa El Kurdi ,  Philippe Boucaud ,  Frederic Boeuf

IPC: H01S5/10 ,  G02B6/12 ,  H01S5/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/227 ,  H01S5/30 ,  G02B6/136 ,  G02B6/10

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

公开(公告)号：US10381478B2

公开(公告)日：2019-08-13

申请号：US15483299

申请日：2017-04-10

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Frederic Boeuf ,  Olivier Weber

IPC: H01L23/48 ,  H01L29/04 ,  H01L29/78 ,  H01L21/02 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/16 ,  H01L29/161

Abstract: A substrate of the silicon on insulator type includes a semi-conducting film disposed on a buried insulating layer which is disposed on an unstressed silicon support substrate. The semi-conducting film includes a first film zone of tensile-stressed silicon and a second film zone of tensile-relaxed silicon. Openings through the buried insulating layer permit access to the unstressed silicon support substrate under the first and second film zones. An N channel transistor is formed from the first film zone and a P channel transistor is formed from the second film zone. The second film zone may comprise germanium enriched silicon forming a compressive-stressed region.

公开(公告)号：US10359652B2

公开(公告)日：2019-07-23

申请号：US15868642

申请日：2018-01-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot ,  Maurin Douix ,  Frederic Boeuf ,  Sébastien Cremer

IPC: G02F1/035 ,  G02F1/025 ,  G02F1/015

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

公开(公告)号：US20180048123A1

公开(公告)日：2018-02-15

申请号：US15555639

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  Centre National de la Recherche Scientifique ,  Universite Paris SUD

Inventor： Mathias Prost ,  Moustafa El Kurdi ,  Philippe Boucaud ,  Frederic Boeuf

IPC: H01S5/32 ,  H01S5/30 ,  H01S5/227 ,  H01S5/02 ,  H01S5/042

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.