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公开(公告)号:US09018723B2
公开(公告)日:2015-04-28
申请号:US13929610
申请日:2013-06-27
Applicant: STMicroelectronics Pte Ltd
Inventor: Olivier Le Neel , Ravi Shankar , Tien Choy Loh
IPC: H01L31/0232 , H01L29/84 , H01L27/14 , H01L27/146
CPC classification number: H01L27/14629 , H01L27/14634 , H01L27/1467 , H01L27/14685 , H01L27/1469 , H01L2924/1461
Abstract: The present disclosure is directed to an infrared sensor that includes a plurality of pairs of support structures positioned on the substrate, each pair including a first support structure adjacent to a second support structure. The sensor includes plurality of pixels, where each pixel is associated with one of the pairs of support structures. Each pixel includes a first infrared reflector layer on the substrate between the first and the second support structures, a membrane formed on the first and second support structures, a thermally conductive resistive layer on the membrane and positioned above the first infrared reflector layer, a second infrared reflector layer on the resistive layer, and an infrared absorption layer on the second infrared reflector layer.
Abstract translation: 本公开涉及一种红外传感器,其包括定位在基板上的多对支撑结构,每对包括邻近第二支撑结构的第一支撑结构。 传感器包括多个像素,其中每个像素与一对支撑结构中的一个相关联。 每个像素包括在第一和第二支撑结构之间的衬底上的第一红外反射器层,形成在第一和第二支撑结构上的膜,膜上的导热电阻层并且位于第一红外反射层之上,第二 电阻层上的红外线反射层,以及第二红外线反射层上的红外线吸收层。
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公开(公告)号:US11257679B2
公开(公告)日:2022-02-22
申请号:US16690673
申请日:2019-11-21
Applicant: STMICROELECTRONICS PTE LTD
Inventor: Tien Choy Loh
IPC: H01L21/3065 , H01L21/02 , H01L21/67
Abstract: One or more embodiments are directed to methods of removing a sacrificial layer from semiconductor wafers during wafer processing. In at least one embodiment, the sacrificial layer is removed from a wafer during an O2 plasma etch step. In one embodiment, the sacrificial layer is poly(p-phenylene-2, 6-benzobisoxazole) (PBO) or polyimide. The O2 plasma etch step causes a residue to form on the wafer. The residue is removed by immersing the wafer a solution that is a mixture of the tetramethylammonium hydroxide (TMAH) and water.
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公开(公告)号:US10254261B2
公开(公告)日:2019-04-09
申请号:US15213100
申请日:2016-07-18
Applicant: STMicroelectronics Pte Ltd
Inventor: Olivier Le Neel , Tien Choy Loh , Shian Yeu Kam , Ravi Shankar
Abstract: A microelectronic device capable of detecting multiple gas constituents in ambient air can be used to monitor air quality. The microelectronic air quality monitor includes a plurality of temperature-sensitive gas sensors tuned to detect different gas species. Each gas sensor is tuned by programming an adjacent heater. An insulating air pocket formed below the sensor helps to maintain the sensor at a desired temperature. A temperature sensor may also be integrated with each gas sensor to provide additional feedback control. The heater, temperature sensor, and gas sensors are in the form of patternable thin films integrated on a single microchip. The device can be incorporated into computer workstations, smart phones, clothing, or other wearable accessories to function as a personal air quality monitor that is smaller, more accurate, and less expensive than existing air quality sensors.
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公开(公告)号:US09013012B2
公开(公告)日:2015-04-21
申请号:US13785938
申请日:2013-03-05
Applicant: STMicroelectronics Pte Ltd.
Inventor: Ravi Shankar , Olivier Le Neel , Shian Yeu Kam , Tien Choy Loh
CPC classification number: B81C1/00293 , B81B7/0041 , B81C2203/0136
Abstract: Embodiments of the present disclosure are related to MEMS devices having a suspended membrane that are secured to and spaced apart from a substrate with a sealed cavity therebetween. The membrane includes openings with sidewalls that are closed by a dielectric material. In various embodiments, the cavity between the membrane and the substrate is formed by removing a sacrificial layer through the openings. In one or more embodiments, the openings in the membrane are closed by depositing the dielectric material on the sidewalls of the openings and the upper surface of the membrane.
Abstract translation: 本公开的实施例涉及具有悬置膜的MEMS器件,其被固定到衬底上并与衬底间隔开密封腔。 膜包括具有由介电材料封闭的侧壁的开口。 在各种实施例中,通过从开口去除牺牲层来形成膜与衬底之间的空腔。 在一个或多个实施例中,通过将介电材料沉积在开口的侧壁和膜的上表面上来封闭膜中的开口。
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