Microelectromechanical scalable bulk-type piezoresistive force/pressure sensor

    公开(公告)号:US11009412B2

    公开(公告)日:2021-05-18

    申请号:US16904123

    申请日:2020-06-17

    Abstract: A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.

    MICROELECTRONIC DEVICE HAVING PROTECTED CONNECTIONS AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:US20190088614A1

    公开(公告)日:2019-03-21

    申请号:US16124922

    申请日:2018-09-07

    Abstract: A microelectronic device includes a chip housing a functional part and carrying first electrical contact regions in electrical connection with the functional part through first protected connections extending over or in the chip. A substrate has a first contact area and a second contact area, which is remote from the first contact area. The first contact area carries second electrical contact regions, and the second contact area carries external connection regions. The second contact regions and the external connection regions are in mutual electrical connection through second protected connections extending over or in the substrate. A protection-ring structure surrounds the first and second electrical contact regions and delimits a first chamber closed with respect to the outside. The first electrical contact regions and the second electrical contact regions are in mutual electrical contact.

    Microelectromechanical scalable bulk-type piezoresistive force/pressure sensor

    公开(公告)号:US10724909B2

    公开(公告)日:2020-07-28

    申请号:US15894770

    申请日:2018-02-12

    Abstract: A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.

    MULTI-AXIAL FORCE SENSOR, METHOD OF MANUFACTURING THE MULTI-AXIAL FORCE SENSOR, AND METHOD FOR OPERATING THE MULTI-AXIAL FORCE SENSOR

    公开(公告)号:US20180372564A1

    公开(公告)日:2018-12-27

    申请号:US16019092

    申请日:2018-06-26

    Abstract: A microelectromechanical transducer includes a semiconductor body having first and second surfaces opposite to one another. A plurality of trenches extend in the semiconductor body from the first surface towards the second surface, including a first pair of trenches having a respective main direction of extension along a first axis, and a second pair of trenches having a respective main direction of extension along a second axis orthogonal to the first axis. A first piezoresistive sensor and a second piezoresistive sensor extend at the first surface of the semiconductor body respectively arranged between the first and second pair of trenches. The first piezoresistive sensor, the second piezoresistive sensor and the plurality of trenches form an active region. A first structural body is mechanically coupled to the first surface of the semiconductor body to form a first sealed cavity which encloses the active region.

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