公开(公告)号：US09117876B2

公开(公告)日：2015-08-25

申请号：US14447699

申请日：2014-07-31

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Grégory Bidal ,  Laurent Favennec ,  Raul Andres Bianchi

IPC: H01L21/336 ,  H01L21/762 ,  H01L29/51 ,  H01L29/66 ,  H01L21/28 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L21/76224 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28202 ,  H01L21/76232 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/78

Abstract: An integrated circuit including at least one isolating trench that delimits an active area made of a monocrystalline semiconductor material, the or each trench comprising an upper portion including an insulating layer that encapsulates a lower portion of the trench, the lower portion being at least partly buried in the active area and the encapsulation layer comprising nitrogen or carbon.

Abstract translation: 一种集成电路，其包括限定由单晶半导体材料制成的有源区域的至少一个隔离沟槽，所述或每个沟槽包括上部，该上部包括封装沟槽的下部的绝缘层，所述下部至少部分地被埋置 在活性区域和包含氮或碳的包封层。

公开(公告)号：US20140145251A1

公开(公告)日：2014-05-29

申请号：US14168167

申请日：2014-01-30

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Laurent Favennec ,  Arnaud Tournier ,  François Roy

IPC: H01L21/762 ,  H01L27/146

CPC classification number: H01L21/76224 ,  H01L21/76237 ,  H01L27/1463

Abstract: A structure comprising at least one DTI-type insulating trench in a substrate, the trench being at the periphery of at least one active area of the substrate forming a pixel, the insulating trench including a cavity filled with a dielectric material, the internal walls of the cavity being covered with a layer made of a boron-doped material.

Abstract translation: 一种结构，其包括在衬底中的至少一个DTI型绝缘沟槽，所述沟槽位于形成像素的衬底的至少一个有源区域的外围，所述绝缘沟槽包括填充有电介质材料的腔体， 该腔被由硼掺杂材料制成的层覆盖。