公开(公告)号：US20170186789A1

公开(公告)日：2017-06-29

申请号：US15096033

申请日：2016-04-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/1203 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

公开(公告)号：US20160104730A1

公开(公告)日：2016-04-14

申请号：US14973344

申请日：2015-12-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Nayera Ahmed ,  François Roy

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

Abstract: A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of the second conductivity type, the insulating structure including a trench crossing the semiconductor layer, the trench walls being coated with an insulating layer, the trench being filled with a conductive material and being surrounded with a P-doped area, more heavily doped than the semiconductor layer.

公开(公告)号：US10170513B2

公开(公告)日：2019-01-01

申请号：US15713639

申请日：2017-09-23

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives ,  STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS (GRENOBLE 2) SAS

Inventor： Yvon Cazaux ,  François Roy ,  Marie Guillon ,  Arnaud Laflaquiere

IPC: H01L27/146 ,  H01L27/12

Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.

公开(公告)号：US10153312B2

公开(公告)日：2018-12-11

申请号：US15790432

申请日：2017-10-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146 ,  H01L27/12

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

公开(公告)号：US09825076B2

公开(公告)日：2017-11-21

申请号：US15096033

申请日：2016-04-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Helene Wehbe-Alause ,  Olivier Noblanc

IPC: H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14612 ,  H01L27/1203 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

公开(公告)号：US09570498B2

公开(公告)日：2017-02-14

申请号：US14587401

申请日：2014-12-31

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François Roy ,  Frédéric Lalanne ,  Pierre Emmanuel Marie Malinge

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14689 ,  H04N5/378

Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

Abstract translation: 图像传感器装置可以包括以行和列排列的图像感测像素阵列。 每个图像感测像素可以包括图像感测光电二极管，耦合到图像感测光电二极管的第一源极跟随器晶体管，以及耦合到图像感测光电二极管的开关。 每个图像传感器装置可以包括耦合到开关的第二源极跟随器晶体管，以及耦合到第一和第二源极跟随器晶体管的行选择晶体管。

公开(公告)号：US20140145251A1

公开(公告)日：2014-05-29

申请号：US14168167

申请日：2014-01-30

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Laurent Favennec ,  Arnaud Tournier ,  François Roy

IPC: H01L21/762 ,  H01L27/146

CPC classification number: H01L21/76224 ,  H01L21/76237 ,  H01L27/1463

Abstract: A structure comprising at least one DTI-type insulating trench in a substrate, the trench being at the periphery of at least one active area of the substrate forming a pixel, the insulating trench including a cavity filled with a dielectric material, the internal walls of the cavity being covered with a layer made of a boron-doped material.

Abstract translation: 一种结构，其包括在衬底中的至少一个DTI型绝缘沟槽，所述沟槽位于形成像素的衬底的至少一个有源区域的外围，所述绝缘沟槽包括填充有电介质材料的腔体， 该腔被由硼掺杂材料制成的层覆盖。

公开(公告)号：US20140004644A1

公开(公告)日：2014-01-02

申请号：US13858481

申请日：2013-04-08

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Lucile Broussous ,  Julien Michelot ,  Jean-Pierre Oddou

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L27/14605

Abstract: A method for manufacturing an image sensor, including the successive steps of: forming columns of a semiconductor material; forming one or several pixels at a first end of each of the columns; and deforming the structure so that the second ends of each of the columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap.

Abstract translation: 一种用于制造图像传感器的方法，包括以下连续步骤：形成半导体材料的列; 在每个列的第一端形成一个或几个像素; 并且使结构变形，使得每个柱的第二端彼此靠近或彼此拉开，以形成多面体盖的形状的表面。

公开(公告)号：US10153318B2

公开(公告)日：2018-12-11

申请号：US15266405

申请日：2016-09-15

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François Roy ,  Frédéric Lalanne ,  Pierre Emmanuel Marie Malinge

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

公开(公告)号：US10090355B2

公开(公告)日：2018-10-02

申请号：US15266345

申请日：2016-09-15

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François Roy ,  Frédéric Lalanne ,  Pierre Emmanuel Marie Malinge

IPC: H01L27/00 ,  H01L27/146 ,  H04N5/378

Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.