公开(公告)号：US08822279B2

公开(公告)日：2014-09-02

申请号：US14036668

申请日：2013-09-25

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung-Jun Kim ,  Chang-Oh Jeong ,  Jae-Hong Kim

IPC: H01L21/84

CPC classification number: H01L29/6675 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/124 ,  H01L29/42384

Abstract: A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region.

Abstract translation: 薄膜晶体管显示面板包括衬底，衬底上的栅极线，并且包括栅极线和栅电极; 栅极线上的栅极绝缘层; 栅极绝缘层上的半导体层; 数据线，包括半导体层上的源电极，与源电极相对于栅电极相对的漏电极和数据线; 数据线上的钝化层具有暴露漏电极的接触孔; 以及钝化层上的像素电极，并通过接触孔与漏电极连接。 栅极线分别具有栅极线和栅电极所在的第一区域和第二区域。 第一区域中的栅极线的厚度大于第二区域中的栅极线的厚度。

公开(公告)号：US20130295731A1

公开(公告)日：2013-11-07

申请号：US13940761

申请日：2013-07-12

Applicant: Samsung Display Co., Ltd.

Inventor： BYOUNG-JUNE KIM ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC: H01L29/66

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract translation: 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

公开(公告)号：US10403536B2

公开(公告)日：2019-09-03

申请号：US15178427

申请日：2016-06-09

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Kyoung Yang ,  Gyung-Min Baek ,  Joon-Yong Park ,  Chang-Oh Jeong

IPC: H01L21/683 ,  C23C14/50 ,  C23C16/458

Abstract: An electrostatic chuck and a substrate processing apparatus including the same are disclosed. In one aspect, the electrostatic chuck includes a stage configured to support a substrate including a panel formation region and a dummy region surrounding the panel formation region. The electrostatic chuck includes a substrate fixing unit including a plurality of electrode patterns insulated from the substrate and spaced apart from one another, the substrate fixing unit at least partially overlapping the dummy region of the substrate and not overlapping the panel formation region of the substrate.