公开(公告)号：US20160181387A1

公开(公告)日：2016-06-23

申请号：US15054037

申请日：2016-02-25

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Yoon Kim ,  Il-Jeong Lee ,  Choong-Youl Im ,  Do-Hyun Kwon

IPC: H01L29/45 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L29/458 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2251/5315

Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.

Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。

公开(公告)号：US09281319B2

公开(公告)日：2016-03-08

申请号：US14244584

申请日：2014-04-03

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Yoon Kim ,  Il-Jeong Lee ,  Choong-Youl Im ,  Do-Hyun Kwon

IPC: H01L29/43 ,  H01L27/12 ,  H01L29/45 ,  H01L27/32

CPC classification number: H01L29/458 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2251/5315

Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.

Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。

公开(公告)号：US09190426B2

公开(公告)日：2015-11-17

申请号：US14103354

申请日：2013-12-11

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun Kwon ,  Il-Jeong Lee ,  Min-Jung Lee ,  Sung-Eun Lee ,  Jung-Kyu Lee ,  Kwang-Young Choi

IPC: H01L29/04 ,  H01L31/036 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1259 ,  H01L27/1248 ,  H01L27/3258 ,  H01L51/5246

Abstract: A display device includes a substrate, an active layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a clad layer, a source electrode, and a drain electrode. The active layer is disposed on the substrate. The gate insulation layer is disposed on the active layer. The gate electrode is disposed on the gate insulation layer. The interlayer insulation layer is disposed on the gate electrode. A dielectric constant of the interlayer insulation layer is less than a dielectric constant of the gate insulation layer. The clad layer is disposed on the interlayer insulation layer. The source and drain electrodes are disposed on the clad layer.

Abstract translation: 显示装置包括基板，有源层，栅极绝缘层，栅极电极，层间绝缘层，覆盖层，源极电极和漏极电极。 有源层设置在基板上。 栅极绝缘层设置在有源层上。 栅电极设置在栅绝缘层上。 层间绝缘层设置在栅电极上。 层间绝缘层的介电常数小于栅极绝缘层的介电常数。 包覆层设置在层间绝缘层上。 源极和漏极设置在覆盖层上。

公开(公告)号：US09437661B2

公开(公告)日：2016-09-06

申请号：US14877044

申请日：2015-10-07

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun Kwon ,  Min-Jung Lee ,  Sung-Eun Lee ,  Il-Jeong Lee ,  Jung-Kyu Lee ,  Kwang-Young Choi

IPC: H01L27/32 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2227/323

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Abstract translation: 薄膜晶体管基板包括在基底基板上的半导体图形，设置在半导体图案上的第一绝缘构件，设置在第一绝缘构件上的第二绝缘图案，以及设置在第一绝缘构件和第二绝缘图案上的栅电极 。 第二绝缘图案与半导体图案的第一端部重叠，并且暴露出与第一端部部分相反的半导体图案的第二端部。 栅电极与第一绝缘构件和第二绝缘图案重叠。

公开(公告)号：US20160218164A1

公开(公告)日：2016-07-28

申请号：US15088445

申请日：2016-04-01

Applicant: Samsung Display Co., Ltd.

Inventor： Choong-Youl Im ,  Il-Jeong Lee ,  Do-Hyun Kwon ,  Ju-Won Yoon ,  Moo-Soon Ko ,  Min-Woo Woo

IPC: H01L27/32 ,  H01L29/49 ,  H01L49/02

CPC classification number: H01L27/3265 ,  H01L27/3248 ,  H01L27/3262 ,  H01L28/40 ,  H01L28/60 ,  H01L29/4908 ,  H01L51/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An organic light emitting diode display includes: a substrate; a substrate insulating layer on the substrate; a capacitor on the substrate insulating layer; a driving thin film transistor including a driving gate electrode connected to the capacitor; and an organic light emitting element connected to the driving thin film transistor, where the capacitor includes: a first capacitor electrode on the substrate insulating layer; a second capacitor electrode on the first capacitor electrode; a capacitor insulating layer between the first capacitor electrode and the second capacitor electrode and contacting the first capacitor electrode and the second capacitor electrode, the capacitor insulating layer having a higher dielectric constant than the substrate insulating layer; and an auxiliary electrode contacting at least one of the first capacitor electrode or the second capacitor electrode.

Abstract translation: 有机发光二极管显示器包括：基板; 衬底上的衬底绝缘层; 基板绝缘层上的电容器; 驱动薄膜晶体管，其包括连接到所述电容器的驱动栅电极; 以及连接到所述驱动薄膜晶体管的有机发光元件，其中所述电容器包括：在所述基板绝缘层上的第一电容器电极; 第一电容器电极上的第二电容器电极; 在所述第一电容器电极和所述第二电容器电极之间的电容器绝缘层，并且与所述第一电容器电极和所述第二电容器电极接触，所述电容器绝缘层的介电常数比所述基板绝缘层高; 和与第一电容器电极或第二电容器电极中的至少一个接触的辅助电极。

公开(公告)号：US09362347B2

公开(公告)日：2016-06-07

申请号：US14578844

申请日：2014-12-22

Applicant: Samsung Display Co., Ltd.

Inventor： Ju-Won Yoon ,  Il-Jeong Lee ,  Choong-Youl Im

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52

CPC classification number: H01L27/3276 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/5012 ,  H01L51/5206 ,  H01L51/5221

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a plurality of pixels. Each of the pixels includes a first insulating layer and first and second signal lines spaced apart from each other. At least a portion of the first and second signal lines is formed over the first insulating layer. Each pixel also includes a second insulating layer interposed between the first and second signal lines. The second insulating layer has a lower permittivity that the first insulating layer.

Abstract translation: 公开了一种有机发光二极管（OLED）显示器。 在一个方面，OLED显示器包括多个像素。 每个像素包括第一绝缘层和彼此间隔开的第一和第二信号线。 第一和第二信号线的至少一部分形成在第一绝缘层上。 每个像素还包括置于第一和第二信号线之间的第二绝缘层。 第二绝缘层具有较低介电常数，即第一绝缘层。

公开(公告)号：US09184253B2

公开(公告)日：2015-11-10

申请号：US14156624

申请日：2014-01-16

Applicant: Samsung Display Co., LTD.

Inventor： Do-Hyun Kwon ,  Min-Jung Lee ,  Sung-Eun Lee ,  Il-Jeong Lee ,  Jung-Kyu Lee ,  Kwang-Young Choi

IPC: H01L29/49 ,  H01L29/423 ,  H01L27/32

CPC classification number: H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2227/323

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Abstract translation: 薄膜晶体管基板包括在基底基板上的半导体图形，设置在半导体图案上的第一绝缘构件，设置在第一绝缘构件上的第二绝缘图案，以及设置在第一绝缘构件和第二绝缘图案上的栅电极 。 第二绝缘图案与半导体图案的第一端部重叠，并且暴露出与第一端部部分相反的半导体图案的第二端部。 栅电极与第一绝缘构件和第二绝缘图案重叠。

公开(公告)号：US20150048320A1

公开(公告)日：2015-02-19

申请号：US14243694

申请日：2014-04-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jeong-Ho Lee ,  Su-Yeon Sim ,  Ju-Won Yoon ,  Seung-Min Lee ,  Wang-Woo Lee ,  Il-Jeong Lee ,  Jung-Kyu Lee ,  Choong-Youl Im

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1255 ,  H01L27/1237 ,  H01L27/1288

Abstract: A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.

Abstract translation: 公开了制造薄膜晶体管（TFT）阵列基板的方法。 一方面，该方法包括在衬底上形成有源层，在衬底上形成第一绝缘层以覆盖有源层，以及在与有源层对应的区域中的第一绝缘层上形成第一栅电极，掺杂 所述有源层具有离子杂质，在所述第一绝缘层上形成第二绝缘层以覆盖所述第一栅电极，对所述有源层执行退火处理，在所述第二绝缘层上形成电容器的下电极，形成第三绝缘层 在第二绝缘层上覆盖下电极，其中第三绝缘层的介电常数大于第一和第二绝缘层的介电常数，并且在第三绝缘层上形成电容器的上电极。

公开(公告)号：US20140217415A1

公开(公告)日：2014-08-07

申请号：US14244584

申请日：2014-04-03

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Yoon Kim ,  Il-Jeong Lee ,  Choong-Youl Im ,  Do-Hyun Kwon

IPC: H01L27/12

CPC classification number: H01L29/458 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2251/5315

Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.

Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。

公开(公告)号：US10396139B2

公开(公告)日：2019-08-27

申请号：US14833345

申请日：2015-08-24

Applicant: Samsung Display Co., Ltd.

Inventor： Ju-Won Yoon ,  Jung-Hwa Kim ,  Min-Woo Woo ,  Il-Jeong Lee ,  Jeong-Soo Lee

IPC: H01L27/32 ,  H01L33/00 ,  H01L29/786 ,  H01L27/12

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate and an active pattern formed over the substrate. The OLED display also includes first and second gate electrodes formed over the active pattern. The first gate electrode defines a first transistor together with the active pattern. The second gate electrode defines a second transistor and a third transistor together with the active pattern. The OLED display further includes a first conductive pattern formed over the first and second gate electrodes. The first conductive pattern overlaps at least a portion of the second and/or third transistors so as to define a parasitic capacitor.