Abstract:
An organic light emitting diode display includes a substrate, a semiconductor layer disposed on the substrate and including an intrinsic poly-semiconductor part and a doped poly-semiconductor part, a gate insulating layer covering the semiconductor layer, a scan line disposed on the gate insulating layer and transmitting a scan signal, a data line insulated from and intersecting the scan line and transmitting a data signal, a thin film transistor connected to the scan line and the data line, and an organic light emitting diode connected to the thin film transistor, where the intrinsic poly-semiconductor part is positioned at a region near the scan line.
Abstract:
A capacitor includes an active layer, a gate insulation layer on the active layer, a gate electrode on the gate insulation layer, an interlayer insulating layer on the gate electrode, and a first electrode on the interlayer insulating layer and connected to the active layer through at least one contact hole.
Abstract:
Provided are an organic light-emitting display apparatus having superior light efficiency and ease of manufacture, as well as a method of manufacturing the same. The organic light-emitting display apparatus includes: a substrate; a pixel electrode disposed on a pixel region of the substrate; a first insulating layer that is interposed between the substrate and the pixel electrode and that has a first discontinuous region extending along at least a portion of an edge of the pixel electrode; an intermediate layer that is disposed on the pixel electrode and that includes an emission layer; and an opposite electrode that covers the intermediate layer and at least a portion of the first discontinuous region, so that a shortest distance to the substrate in at least a portion of the first discontinuous region is shorter than a shortest distance between the pixel electrode and the substrate.
Abstract:
An organic light emitting diode (OLED) display includes a light-emitting region including an organic emission layer and a non-light-emitting region neighboring the light-emitting region. The OLED display includes a first electrode positioned at the light-emitting region and including a plurality of division regions divided according to a virtual cutting line crossing the light-emitting region, an organic emission layer positioned on the first electrode, a second electrode positioned on the organic emission layer, a driving thin film transistor connected to the first electrode, and a plurality of input terminals positioned at the non-light-emitting region and respectively connecting between each of division regions and the driving thin film transistor.
Abstract:
Provided is a method of manufacturing an organic light-emitting display apparatus which may reduce white angular dependency (WAD). The method includes forming a common layer on each of subpixel areas at the same time without discretion within one pixel area, the common layer not being formed on connection areas between pixel areas.
Abstract:
An organic light emitting diode (OLED) display includes a substrate where a plurality of pixels are formed, a first pixel defining layer on the substrate, the first pixel defining layer dividing the plurality of pixels, a connection wire on the first pixel defining layer, the connection wire electrically connecting two adjacent pixels, and a second pixel defining layer on the first pixel defining layer, the second pixel defining layer covering the connection wire.
Abstract:
A thin film transistor (TFT) substrate, an organic light-emitting display apparatus including the TFT substrate, and a method of manufacturing the TFT substrate that enable simple manufacturing processes and a decrease in the interference between a capacitor and other interconnections are disclosed. The TFT substrate may include a substrate, a TFT arranged on the substrate, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a pixel electrode electrically connected to one of the source electrode and the drain electrode, and a capacitor including a lower capacitor electrode and an upper capacitor electrode, the lower capacitor electrode formed from the same material as the active layer and arranged on the same layer as the active layer, and the upper capacitor electrode formed from the same material as the pixel electrode.
Abstract:
A thin film transistor is disclosed. The thin film transistor may include a semiconductor formed on a substrate, a gate insulating layer formed on the semiconductor, a gate electrode formed on the gate insulating layer and including a plurality of branches overlapping the semiconductor, an interlayer insulating layer at least partially overlapping the gate electrode, and a repair pattern formed on the interlayer insulating layer. The repair pattern may be formed overlapping the branches. The repair pattern may also be formed in a closed loop.
Abstract:
A pixel includes an organic light emitting diode (OLED), a first transistor, a first capacitor, a second capacitor, and a pixel circuit. The OLED includes a cathode electrode connected to a second power source. The first transistor is connected between a data line and a first node, and turns on when a scan signal is supplied to a scan line. The first capacitor is connected between the first node and a third power source. The second capacitor is connected between the first node and a fourth power source. The pixel circuit controls a current quantity flowing from a first power source to the second power source through the OLED based on a voltage of the first node.