Abstract:
An organic light-emitting display (OLED) device is provided. The OLED device includes: a substrate of which a pixel region is defined; a light-condensing means disposed on the pixel region of the substrate; a lower electrode disposed on the light-condensing means; an organic layer, which is disposed on the lower electrode and includes an organic light-emitting layer; and an upper electrode disposed on the organic layer. A method for manufacturing such an OLED device is also provided.
Abstract:
The organic light emitting display device includes a substrate including a thin film transistor (TFT) formed thereon, the TFT including a first insulating layer disposed between an active layer and a gate electrode, and a second insulating layer disposed between the gate electrode and source and drain electrodes; a pad electrode including a first pad layer disposed on a same layer as that where the source and drain electrodes are formed, and a second pad layer on the first pad layer; a bonding assistant layer on the substrate; a third insulating layer on the bonding assistant layer and including a first opening; a pixel electrode disposed in the first opening and electrically coupled to one of the source and drain electrodes; and a fourth insulating layer on the pixel electrode to cover a peripheral end portion of the pixel electrode and defining a pixel through a second opening.
Abstract:
A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.
Abstract:
A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material.
Abstract:
An organic light-emitting display apparatus including: a substrate; at least one thin-film transistor disposed on the substrate; at least one capacitor disposed on the substrate and including a first electrode and a second electrode; a pixel electrode connected to the at least one thin-film transistor; a counter electrode facing the pixel electrode and including a reflective material; an organic emission layer disposed between the pixel electrode and the counter electrode; a first optical characteristic adjusting layer disposed between the substrate and the pixel electrode and formed on a same layer as the second electrode of the at least one capacitor; and a second optical characteristic adjusting layer disposed between the first optical characteristic adjusting layer and the pixel electrode.
Abstract:
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode, a first insulating layer arranged between the active layer and the gate electrode, and a second insulating layer arranged between the gate, source, and drain electrodes. The OLED display also includes a third insulating layer covering the source and drain electrodes, wherein an opening is defined in each of the second and third insulating layers and wherein the openings substantially overlap. The OLED display further includes a pixel electrode formed in the openings defined in the second and third insulating layers and including a semi-permeable metal layer.
Abstract:
A thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the thin-film transistor array substrate includes a buffer layer formed on a substrate, a first insulating layer formed on the buffer layer, a pixel electrode formed on the first insulating layer using a transparent conductive material, an intermediate layer that covers an upper side and outer side-surfaces of the pixel electrode and includes a organic light-emitting layer, a gap formed by etching the first insulating layer and the buffer layer at a peripheral of the pixel electrode, and a facing electrode that is formed on an upper side and outer side-surfaces of the pixel electrode to cover the intermediate layer and the gap.
Abstract:
An organic light-emitting display apparatus includes: a thin film transistor including an active layer, a gate electrode, a source electrode, a drain electrode, a first insulating layer, and a second insulating layer; a pad electrode comprising a first pad layer and a second pad layer on the first pad layer; a third insulating layer covering the source electrode and the drain electrode and an end portion of the pad electrode; a pixel electrode comprising a semi-transmissive electrically conductive layer at an opening in the third insulating layer; a protection layer between the pixel electrode and the first insulating layer; a fourth insulating layer having an opening at a location corresponding to the opening formed in the third insulating layer and covering the end portion of the pad electrode; an emission layer on the pixel electrode; and an opposing electrode on the emission layer.
Abstract:
The organic light emitting display device includes a substrate including a thin film transistor (TFT) formed thereon, the TFT including a first insulating layer disposed between an active layer and a gate electrode, and a second insulating layer disposed between the gate electrode and source and drain electrodes; a pad electrode including a first pad layer disposed on a same layer as that where the source and drain electrodes are formed, and a second pad layer on the first pad layer; a bonding assistant layer on the substrate; a third insulating layer on the bonding assistant layer and including a first opening; a pixel electrode disposed in the first opening and electrically coupled to one of the source and drain electrodes; and a fourth insulating layer on the pixel electrode to cover a peripheral end portion of the pixel electrode and defining a pixel through a second opening.
Abstract:
A thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the thin-film transistor array substrate includes a buffer layer formed on a substrate, a first insulating layer formed on the buffer layer, a pixel electrode formed on the first insulating layer using a transparent conductive material, an intermediate layer that covers an upper side and outer side-surfaces of the pixel electrode and includes a organic light-emitting layer, a gap formed by etching the first insulating layer and the buffer layer at a peripheral of the pixel electrode, and a facing electrode that is formed on an upper side and outer side-surfaces of the pixel electrode to cover the intermediate layer and the gap.