公开(公告)号：US11676816B2

公开(公告)日：2023-06-13

申请号：US16530286

申请日：2019-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Min Park ,  Se Myeong Jang ,  Bong Soo Kim ,  Je Min Park

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/308 ,  H01L21/762

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/32139 ,  H01L21/76224

Abstract: A method of forming a semiconductor device includes forming first sacrificial patterns on a lower structure, forming first remaining mask layers having a “U” shape between the first sacrificial patterns to be in contact with the first sacrificial patterns, forming first remaining mask patterns by pattering the first remaining mask layers, each of the first remaining mask patterns including a horizontal portion, parallel to an upper surface of the lower structure, and a vertical portion, perpendicular to the upper surface of the lower structure, forming second mask patterns spaced apart from the vertical portions of the first remaining mask patterns, removing the first sacrificial patterns remaining after forming the second mask patterns, and forming first mask patterns by etching the horizontal portions of the first remaining mask patterns.

公开(公告)号：US11626405B2

公开(公告)日：2023-04-11

申请号：US17201121

申请日：2021-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hwan Kim ,  Ji Young Kim ,  Bong Soo Kim

IPC: H01L27/08 ,  H01L27/02 ,  H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a plurality of lower electrode structures disposed on a substrate, and a supporter pattern disposed between pairs of lower electrode structures of the plurality of lower electrode structures. The semiconductor device further includes a capacitor dielectric layer disposed on surfaces of each of the plurality of lower electrode structures and the supporter pattern, and an upper electrode disposed on the capacitor dielectric layer. The plurality of lower electrode structures includes a first lower electrode and a second lower electrode disposed on the first lower electrode and having a cylindrical shape. The first lower electrode has a pillar shape. The first lower electrode includes an insulating core. The insulating core is disposed in the first lower electrode. An outer side surface of the first lower electrode and an outer side surface of the second lower electrode are coplanar.

公开(公告)号：US10971496B2

公开(公告)日：2021-04-06

申请号：US16409046

申请日：2019-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hwan Kim ,  Ji Young Kim ,  Bong Soo Kim

IPC: H01L27/08 ,  H01L27/02 ,  H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a plurality of lower electrode structures disposed on a substrate, and a supporter pattern disposed between pairs of lower electrode structures of the plurality of lower electrode structures. The semiconductor device further includes a capacitor dielectric layer disposed on surfaces of each of the plurality of lower electrode structures and the supporter pattern, and an upper electrode disposed on the capacitor dielectric layer. The plurality of lower electrode structures includes a first lower electrode and a second lower electrode disposed on the first lower electrode and having a cylindrical shape. The first lower electrode has a pillar shape. The first lower electrode includes an insulating core. The insulating core is disposed in the first lower electrode. An outer side surface of the first lower electrode and an outer side surface of the second lower electrode are coplanar.

公开(公告)号：US10699996B2

公开(公告)日：2020-06-30

申请号：US16037724

申请日：2018-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bong Soo Kim

IPC: H01L23/498 ,  H01L23/528 ,  H01L23/49 ,  H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H05K1/18

Abstract: A fan-out semiconductor package includes: a core member having a through-hole; a semiconductor chip disposed in the through-hole of the core member and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant covering at least portions of the core member and the semiconductor chip and filling at least portions of the through-hole; and a connection member disposed on the core member and the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads. The core member has a recess portion penetrating through at least portions of the core member, and at least a portion of the recess portion is filled with the encapsulant.