公开(公告)号：US20240405014A1

公开(公告)日：2024-12-05

申请号：US18405843

申请日：2024-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongkyu Song ,  Jin Heo ,  Minho Kim ,  Jooyoung Song ,  Eunsuk Lee ,  Chanhee Jeon

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/735 ,  H01L29/78

Abstract: The present disclosure relates to semiconductor devices. An example semiconductor device includes a first well region and a second well region isolated from each other by a first device isolation film; an NPN transistor provided by a first collector region formed in the first well region and including first conductivity-type impurities, and a first emitter region formed in the second well region and including the first conductivity-type impurities; a PNP transistor provided by a second emitter region formed in the first well region and including second conductivity-type impurities different from the first conductivity-type, and a second collector region formed in the second well region and including the second conductivity-type impurities; and an NMOS transistor including a source region and a drain region formed in the second well region and including the first conductivity-type impurities, and a gate structure disposed between the source region and the drain region.

公开(公告)号：US20240259008A1

公开(公告)日：2024-08-01

申请号：US18236303

申请日：2023-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Heo ,  Jongkyu Song ,  Minho Kim ,  Jooyoung Song ,  Chanhee Jeon

IPC: H03K17/08

CPC classification number: H03K17/08

Abstract: A semiconductor device is provided. The semiconductor device includes: a first power pad; a second power pad; a signal pad; a clamping circuit connected between the first power pad and the second power pad; a driving circuit connected to the signal pad and including a pull-up circuit and a pull-down circuit; and a first gate-off circuit connected to the pull-down circuit. The first gate-off circuit is configured to connect a gate of the pull-down circuit and a source of the pull-down circuit to each other during an electrostatic discharge (ESD) event in which a high voltage is applied to the signal pad, and control a current generated by the high voltage to flow to the clamping circuit.

公开(公告)号：US20240222362A1

公开(公告)日：2024-07-04

申请号：US18402387

申请日：2024-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoungil Do ,  Jinwoo Jung ,  Jooyoung Song ,  Mijin Lee ,  Chanhee Jeon

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L27/0292 ,  H02H9/046

Abstract: A device, including a first silicon controlled rectifier comprising a first anode connected to a first node, a first cathode connected to a pad, and a first gate; a second silicon controlled rectifier comprising a second anode connected to the pad, a second cathode connected to a second node, and a second gate; and a back diode forwardly connected from the second node to the first gate.

公开(公告)号：US20240136811A1

公开(公告)日：2024-04-25

申请号：US18350608

申请日：2023-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eonguk Kim ,  Chanhee Jeon

IPC: H02H9/04 ,  H03K19/0185

CPC classification number: H02H9/04 ,  H03K19/018571

Abstract: A semiconductor device includes: a voltage clamping circuit including a plurality of first elements operating upon receiving a voltage having a first level and configured to output a clamp signal swinging in the first level by adjusting a voltage of an external input signal swinging in a second level more than twice the first level; a first buffer circuit configured to buffer the clamp signal; a level down shifter circuit configured to reduce the voltage of the clamp signal and output an internal input signal swinging in the first level between a predetermined reference voltage and a first power supply voltage higher than the reference voltage; and a second buffer circuit configured to buffer the internal input signal and transmits the internal input signal to a core circuit.

公开(公告)号：US11908895B2

公开(公告)日：2024-02-20

申请号：US17542728

申请日：2021-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongkyu Song ,  Jaehyun Yoo ,  Jangkyu Choi ,  Jin Heo ,  Changsu Kim ,  Chanhee Jeon

IPC: H01L29/08 ,  H01L29/735

CPC classification number: H01L29/0821 ,  H01L29/735

Abstract: An electrostatic discharge protection device includes: an emitter region disposed on a semiconductor substrate; a base region surrounding the emitter region; a first collector region surrounding the base region; a second collector region surrounding the first collector region; a second conductivity-type drift region below the emitter region, and being deeper than the base region; a second conductivity-type well region disposed below the base region, and having a junction interface with the second conductivity-type drift region; and a plurality of isolation portions disposed between the emitter region, the base region, and the first collector region and the second collector region.

公开(公告)号：US11817447B2

公开(公告)日：2023-11-14

申请号：US16986533

申请日：2020-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungjun Song ,  Hyunkwang Jeong ,  Changsu Kim ,  Chanhee Jeon

IPC: H01L27/02

CPC classification number: H01L27/0277 ,  H01L27/0274 ,  H01L27/0285

Abstract: A semiconductor device includes a substrate including a P-well region, a gate electrode on the substrate, and a first region and a second region formed in the substrate on opposite sides adjacent to the gate electrode, the first region includes a first N-well region in the substrate and a second N-well region, a first impurity region, a second impurity region in the first N-well region, the second region includes a third impurity region in the substrate and a fourth impurity region in the third impurity region, a doping concentration of the second N-well region is greater than a doping concentration of the first N-well region, and a doping concentration of the second impurity region is greater than a doping concentration of the second N-well region.

公开(公告)号：US11742342B2

公开(公告)日：2023-08-29

申请号：US17144354

申请日：2021-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukjin Kim ,  Mijin Lee ,  Chanhee Jeon

IPC: H01L27/02

CPC classification number: H01L27/0255

Abstract: An electrostatic discharge (ESD) device having a small size, a low turn-on voltage, and a low on resistance and an ESD protection circuit including the ESD device are provided. The ESD device includes a well formed in a substrate to have a first conductive type, an active region being defined at an upper portion of the substrate, a plurality of fins extending in a first direction to have a structure protruding from the substrate, a first conductive impurity region formed with first conductive impurities, a second conductive impurity region formed with second conductive impurities, and a fin-cut isolation region disposed between the first conductive impurity region and the second conductive impurity region in the first direction to cut each fin, wherein a bottom surface of the fin-cut isolation region is higher than a bottom surface of the active region.

公开(公告)号：US20210384188A1

公开(公告)日：2021-12-09

申请号：US17144354

申请日：2021-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukjin KIM ,  Mijin Lee ,  Chanhee Jeon

IPC: H01L27/02

Abstract: An electrostatic discharge (ESD) device having a small size, a low turn-on voltage, and a low on resistance and an ESD protection circuit including the ESD device are provided. The ESD device includes a well formed in a substrate to have a first conductive type, an active region being defined at an upper portion of the substrate, a plurality of fins extending in a first direction to have a structure protruding from the substrate, a first conductive impurity region formed with first conductive impurities, a second conductive impurity region formed with second conductive impurities, and a fin-cut isolation region disposed between the first conductive impurity region and the second conductive impurity region in the first direction to cut each fin, wherein a bottom surface of the fin-cut isolation region is higher than a bottom surface of the active region.