公开(公告)号：US20220393030A1

公开(公告)日：2022-12-08

申请号：US17667608

申请日：2022-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Ho NA ,  Sung Soo Kim ,  Sun Ki Min ,  Dong Hyun Roh

IPC: H01L29/78 ,  H01L29/417

Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.

公开(公告)号：US11416213B2

公开(公告)日：2022-08-16

申请号：US16047142

申请日：2018-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joo Yoo Kim ,  Jun Hui Kim ,  Ji Eun Kim ,  Tae Ho Kim ,  Dong Hyun Roh ,  Hyun Gi Ahn ,  Da Som Lee ,  Seung Eun Lee

IPC: G06F3/16 ,  G06F3/0488 ,  G06F9/451 ,  G06F3/04842 ,  G06F3/01

Abstract: An electronic device includes a microphone, a processor, and a memory. The memory stores an application for monitoring user information, and the memory stores instructions that, when executed by the processor, cause the electronic device to record a plurality of parameters associated with the user information in the application when a predefined event occurs to record a first parameter and the first parameter is not recorded in the application, to output a message for obtaining the first parameter, to receive a user response associated with the first parameter, to transmit data associated with the user response to an external server, to receive a first response from the external server, and to record the first parameter in the application by allowing the electronic device to have information about sequences of states of the electronic device. The first response includes information about sequences of states of the electronic device for recording the first parameter in the application.

公开(公告)号：US10854754B2

公开(公告)日：2020-12-01

申请号：US16932076

申请日：2020-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo Kim ,  Dong Hyun Roh ,  Koung Min Ryu ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/423 ,  H01L27/12 ,  H01L27/092

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

公开(公告)号：US10236081B2

公开(公告)日：2019-03-19

申请号：US15829201

申请日：2017-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Gi Ahn ,  Dong Hyun Roh ,  Kyung Sub Min

IPC: G08B21/02 ,  G16H40/63 ,  G06Q50/22 ,  G06F19/00 ,  G16H50/20 ,  G16H40/67 ,  G16H20/30

Abstract: An electronic device includes a display, communication circuitry, at least one sensor, and a processor electrically connected with the display and the at least one sensor. The processor is configured to, based on state information obtained by the at least one sensor satisfying a predefined condition when a health state of a user corresponds to a first state, control transmitting the state information to an external server through the communication circuitry, control receiving from the external server a symptom check result corresponding to the state information, set a health state of the user to a second state based on the symptom check result, and provide a user interface (UI) for user health management at least once until the health state of the user changes from the second state to the first state based on at least one of the state information and the symptom check result.

公开(公告)号：US12166093B2

公开(公告)日：2024-12-10

申请号：US17216903

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki Min ,  Chae Ho Na ,  Sang Koo Kang ,  Ik Soo Kim ,  Dong Hyun Roh

IPC: H01L29/417 ,  H01L23/535 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.

公开(公告)号：US12080798B2

公开(公告)日：2024-09-03

申请号：US17667608

申请日：2022-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Ho Na ,  Sung Soo Kim ,  Sun Ki Min ,  Dong Hyun Roh

IPC: H01L29/78 ,  H01L29/417

CPC classification number: H01L29/7851 ,  H01L29/41791

Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.

公开(公告)号：US11600518B2

公开(公告)日：2023-03-07

申请号：US17308128

申请日：2021-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Chae Ho Na ,  Gyu Hwan Ahn ,  Dong Hyun Roh ,  Sang Jin Hyun

IPC: H01L21/76 ,  H01L21/762 ,  H01L27/088 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

公开(公告)号：US11018050B2

公开(公告)日：2021-05-25

申请号：US16386704

申请日：2019-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Chae Ho Na ,  Gyu Hwan Ahn ,  Dong Hyun Roh ,  Sang Jin Hyun

IPC: H01L29/66 ,  H01L21/762 ,  H01L27/088

Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

公开(公告)号：US10727349B2

公开(公告)日：2020-07-28

申请号：US16426819

申请日：2019-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo Kim ,  Dong Hyun Roh ,  Koung Min Ryu ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/423 ,  H01L27/092 ,  H01L27/12

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.