公开(公告)号：US11728409B2

公开(公告)日：2023-08-15

申请号：US17112357

申请日：2020-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Hye Lee ,  Sung Soo Kim ,  Ik Soo Kim ,  Woong Sik Nam ,  Dong Hyun Roh

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  B82Y10/00

CPC classification number: H01L29/6656 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/66545 ,  H01L29/66553 ,  B82Y10/00

Abstract: A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.

公开(公告)号：US20190280116A1

公开(公告)日：2019-09-12

申请号：US16426819

申请日：2019-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo Kim ,  Dong Hyun Roh ,  Koung Min Ryu ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

公开(公告)号：US11495223B2

公开(公告)日：2022-11-08

申请号：US16770322

申请日：2018-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Gi Ahn ,  Joo Yoo Kim ,  Ji Eun Kim ,  Dong Hyun Roh ,  Kyung Sub Min ,  Seung Eun Lee

IPC: G10L15/22 ,  G06F3/16 ,  G10L15/02 ,  H04M1/72466

Abstract: An electronic device according to various embodiments may comprise a memory in which one or more applications are installed, a communication circuit, and a processor, wherein the processor is configured to acquire audio data during execution of a designated application among the one or more applications, wherein the acquiring of audio data comprises an operation of storing, in the memory, at least a portion including multiple pieces of phoneme information among the audio data, when a designated condition is satisfied, transmit the at least portion to an external electronic device so that the external electronic device generates designated information for execution of at least one application among the one or more applications by using at least a part of the multiple pieces of phoneme information stored before the designated condition is satisfied, and on the basis of the designated information, execute the at least one application in relation to the designated application.

公开(公告)号：US11328949B2

公开(公告)日：2022-05-10

申请号：US16831500

申请日：2020-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chae Ho Na ,  Sung Soo Kim ,  Gyu Hwan Ahn ,  Dong Hyun Roh

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/786 ,  H01L21/762

Abstract: A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.

公开(公告)号：US11217343B2

公开(公告)日：2022-01-04

申请号：US15771701

申请日：2016-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： No Ah Lee ,  Dong Geon Kim ,  Kwang Yuel Ryu ,  Chung Ki Lee ,  David Rim ,  Min Hee Jang ,  Pravinsagar Prabakaran ,  Dong Hyun Roh ,  Jae Woong Chun

IPC: A63B24/00 ,  G06K9/00 ,  G16H40/67 ,  G16H20/30 ,  H04L29/08

Abstract: An electronic device includes a sensor, a processor, and a memory configured to store at least one instruction executed by the processor, wherein the processor is configured to collect activity information on a user related to the electronic device by using the sensor, the collecting of the activity information including creating an amount of activity of the user for a specific goal or an activity engagement level for the specific goal by using the activity information, adjust at least one of an output time point, an output cycle, the number of outputs, or the output contents of the activity guide information for the user to an activity guide parameter at least based on the amount of activity or the activity engagement level, and output the activity guide information created by using the adjusted activity guide parameter through an output device operatively connected to the processor.

公开(公告)号：US10347763B2

公开(公告)日：2019-07-09

申请号：US15697678

申请日：2017-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Dong Hyun Roh ,  Koung Min Ryu ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/423 ,  H01L27/092 ,  H01L27/12

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

公开(公告)号：US12237210B2

公开(公告)日：2025-02-25

申请号：US17740095

申请日：2022-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chae Ho Na ,  Sung Soo Kim ,  Gyu Hwan Ahn ,  Dong Hyun Roh

IPC: H01L21/762 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.

公开(公告)号：US20220069092A1

公开(公告)日：2022-03-03

申请号：US17216903

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki Min ,  Chae Ho Na ,  Sang Koo Kang ,  Ik Soo Kim ,  Dong Hyun Roh

IPC: H01L29/417 ,  H01L27/092 ,  H01L23/535 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.

公开(公告)号：US10695002B2

公开(公告)日：2020-06-30

申请号：US15262784

申请日：2016-09-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Hyun Roh ,  Byoung Jip Kim ,  Min Hee Jang

IPC: A61B5/00 ,  G09B19/00 ,  A61B5/11 ,  G16H20/30 ,  A61B5/024

Abstract: An electronic device and a method for activity information are provided. The electronic device includes a sensor configured to collect sensing information according to a motion of the electronic device, and at least one processor operatively connected with the sensor. The at least one processor is configured to control for obtaining activity information including at least one of an exercise amount that is calculated based on first sensing information obtained according to execution of a specified workout, and a movement amount that is calculated based on second sensing information obtained according to a daily life, determining an expected value of an activity amount, by which a user works out, during a specific time period by a user based on the activity information, and providing guide information for achieving an activity goal associated with the user based on at least one of the expected value of the activity amount and the activity information.

公开(公告)号：US20180254338A1

公开(公告)日：2018-09-06

申请号：US15697678

申请日：2017-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Dong Hyun Roh ,  Koung Min Ryu ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/785 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/41791 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L2029/7858

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.