公开(公告)号：US11959170B2

公开(公告)日：2024-04-16

申请号：US17333820

申请日：2021-05-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Hyunjae Lee ,  Ik Soo Kim ,  Jang-Hee Lee

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  B01B1/00 ,  C23C14/24

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/4483 ,  H01L21/02175 ,  H01L21/0228 ,  B01B1/005 ,  C23C14/243 ,  C23C16/4485 ,  C23C16/45561

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

公开(公告)号：US11728409B2

公开(公告)日：2023-08-15

申请号：US17112357

申请日：2020-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Hye Lee ,  Sung Soo Kim ,  Ik Soo Kim ,  Woong Sik Nam ,  Dong Hyun Roh

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  B82Y10/00

CPC classification number: H01L29/6656 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/66545 ,  H01L29/66553 ,  B82Y10/00

Abstract: A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.

公开(公告)号：US12080767B2

公开(公告)日：2024-09-03

申请号：US17406310

申请日：2021-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo Kim ,  Joohan Kim ,  Gyuhwan Ahn ,  Ik Soo Kim ,  Jongmin Baek

IPC: H01L29/41 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/41775 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/7851 ,  H01L29/7853

Abstract: A semiconductor device includes a first active pattern disposed on a substrate, a device isolation layer filling a trench that defines the first active pattern, a first channel pattern and a first source/drain pattern disposed on the first active pattern in which the first channel pattern includes semiconductor patterns stacked and spaced apart from each other, a gate electrode that extends and runs across the first channel pattern, a gate dielectric layer disposed between the first channel pattern and the gate electrode, and a first passivation pattern disposed between the device isolation layer and a first sidewall of the first active pattern. The first passivation pattern includes an upper part that protrudes upwardly from the device isolation layer, and a lower part buried in the device isolation layer. The gate dielectric layer covers the upper part of the first passivation pattern.

公开(公告)号：US20220069092A1

公开(公告)日：2022-03-03

申请号：US17216903

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki Min ,  Chae Ho Na ,  Sang Koo Kang ,  Ik Soo Kim ,  Dong Hyun Roh

IPC: H01L29/417 ,  H01L27/092 ,  H01L23/535 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.

公开(公告)号：US11047045B2

公开(公告)日：2021-06-29

申请号：US16030323

申请日：2018-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung Lee ,  Hyunjae Lee ,  Ik Soo Kim ,  Jang-Hee Lee

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/44 ,  C23C16/448 ,  C23C14/24 ,  B01B1/00

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

公开(公告)号：US11225715B2

公开(公告)日：2022-01-18

申请号：US16750557

申请日：2020-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byung-Sun Park ,  Ik Soo Kim ,  Jiwoon Im ,  Sangho Rha ,  Minjae Oh

IPC: C23C16/455 ,  H01L21/67 ,  H01J37/32

Abstract: A semiconductor manufacturing apparatus includes a chamber that includes a station in which a substrate is provided, a substrate holder that is in the station and receives the substrate, and lower showerheads below the substrate holder, the lower showerheads including an isotropic showerhead having first nozzle holes that isotropically provide a first reaction gas on a bottom surface of the substrate, and a striped showerhead having striped nozzle regions and striped blank regions between the striped nozzle regions, the striped nozzle regions having second nozzle holes that non-isotropically provide a second reaction gas on the bottom surface of the substrate.

公开(公告)号：US12016178B2

公开(公告)日：2024-06-18

申请号：US18097592

申请日：2023-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-Hee Kim ,  Woo Choel Noh ,  Ik Soo Kim ,  Jun Kwan Kim ,  Jinsub Kim ,  Yongjin Shin

IPC: H10B41/46 ,  H10B41/10 ,  H10B41/20 ,  H10B43/10 ,  H10B43/20 ,  H10B43/40

CPC classification number: H10B41/46 ,  H10B41/10 ,  H10B41/20 ,  H10B43/10 ,  H10B43/20 ,  H10B43/40

Abstract: A semiconductor device including a substrate that includes a cell array region and a peripheral circuit region; a cell transistor on the cell array region of the substrate; a peripheral transistor on the peripheral circuit region of the substrate; a first interconnection layer connected to the cell transistor; a second interconnection layer connected to the peripheral transistor; an interlayer dielectric layer covering the first interconnection layer; and a blocking layer spaced apart from the first interconnection layer, the blocking layer covering a top surface and a sidewall of the second interconnection layer.

公开(公告)号：US11700726B2

公开(公告)日：2023-07-11

申请号：US17165539

申请日：2021-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub Kim ,  Jun Kwan Kim ,  Woo Choel Noh ,  Kyoung-Hee Kim ,  Ik Soo Kim ,  Yong Jin Shin

IPC: H10B12/00 ,  H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10897

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate, an upper electrode on the capacitor dielectric film, an interface layer including a hydrogen blocking film and a hydrogen bypass film on the upper electrode, the hydrogen blocking film including a conductive material, and a contact plug penetrating the interface layer and electrically connected to the upper electrode.

公开(公告)号：US11563017B2

公开(公告)日：2023-01-24

申请号：US17099994

申请日：2020-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-Hee Kim ,  Woo Choel Noh ,  Ik Soo Kim ,  Jun Kwan Kim ,  Jinsub Kim ,  Yongjin Shin

IPC: H01L27/11539 ,  H01L27/11519 ,  H01L27/11578 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11551

Abstract: A semiconductor device including a substrate that includes a cell array region and a peripheral circuit region; a cell transistor on the cell array region of the substrate; a peripheral transistor on the peripheral circuit region of the substrate; a first interconnection layer connected to the cell transistor; a second interconnection layer connected to the peripheral transistor; an interlayer dielectric layer covering the first interconnection layer; and a blocking layer spaced apart from the first interconnection layer, the blocking layer covering a top surface and a sidewall of the second interconnection layer.

公开(公告)号：US12166093B2

公开(公告)日：2024-12-10

申请号：US17216903

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki Min ,  Chae Ho Na ,  Sang Koo Kang ,  Ik Soo Kim ,  Dong Hyun Roh

IPC: H01L29/417 ,  H01L23/535 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.