Semiconductor device including source/drain having sidewalls with convex and concave portions

    公开(公告)号:US12225741B2

    公开(公告)日:2025-02-11

    申请号:US18216041

    申请日:2023-06-29

    Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.

    Image re-encoding method and device thereof

    公开(公告)号:US10477211B2

    公开(公告)日:2019-11-12

    申请号:US15524055

    申请日:2015-05-21

    Abstract: A method of determining whether an image is to be re-encoded includes obtaining a first quantization matrix from an image file including the image, the image being encoded by quantization based on the first quantization matrix including a plurality of first quantization parameters; obtaining a second quantization matrix from a re-encoding device, the second quantization matrix including a plurality of second quantization parameters and having the same size as the first quantization matrix; determining a comparison coefficient based on elements greater than ‘0’ among elements of a comparison matrix obtained by subtracting the first quantization matrix from the second quantization matrix; and determining that the image is to be decoded by inverse quantization based on the first quantization matrix and the decoded image is to be re-encoded by quantization based on the second quantization matrix, when the comparison coefficient is greater than a first threshold value.

    METHOD OF GENERATING USER INTERFACE AND APPARATUS FOR GENERATING USER INTERFACE BY USING THE SAME
    14.
    发明申请
    METHOD OF GENERATING USER INTERFACE AND APPARATUS FOR GENERATING USER INTERFACE BY USING THE SAME 审中-公开
    生成用户界面的方法和使用它来产生用户界面的设备

    公开(公告)号:US20140039927A1

    公开(公告)日:2014-02-06

    申请号:US13793597

    申请日:2013-03-11

    CPC classification number: G16H15/00 F04C2270/041 G16H10/60

    Abstract: An apparatus for generating a user interface image for indicating a patient's health-related information includes an information receiver for receiving the patient's health-related information, an information arranger and classifier for arranging at least one piece of information included in the health-related information in a time sequence, and a user interface (UI) generator for generating the user interface image for displaying the at least one piece of information that is arranged in a time sequence, along a first axis, whereby a patient and a doctor may easily recognize the health-related information.

    Abstract translation: 一种用于生成用于指示患者健康相关信息的用户界面图像的装置,包括:用于接收患者健康相关信息的信息接收器,用于将包含在健康相关信息中的至少一条信息安排在信息整理器和分类器 时间序列和用户界面(UI)生成器,用于生成用于沿着第一轴显示以时间顺序排列的至少一条信息的用户界面图像,由此患者和医生可以容易地识别 健康相关信息。

    SEMICONDUCTOR DEVICE HAVING A FIN STRUCTURE AND A MANUFACTURING METHOD THEREOF

    公开(公告)号:US20190259840A1

    公开(公告)日:2019-08-22

    申请号:US16392000

    申请日:2019-04-23

    Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

    Multigate metal-oxide semiconductor field effect transistor

    公开(公告)号:US10361202B2

    公开(公告)日:2019-07-23

    申请号:US15611893

    申请日:2017-06-02

    Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.

    SEMICONDUCTOR DEVICE HAVING A FIN STRUCTURE AND A MANUFACTURING METHOD THEREOF

    公开(公告)号:US20190006469A1

    公开(公告)日:2019-01-03

    申请号:US15871374

    申请日:2018-01-15

    Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

    Zoom lens and photographing apparatus having the same
    19.
    发明授权
    Zoom lens and photographing apparatus having the same 有权
    具有相同的变焦镜头和拍摄装置

    公开(公告)号:US08982475B2

    公开(公告)日:2015-03-17

    申请号:US13938444

    申请日:2013-07-10

    Inventor: Dong-woo Kim

    CPC classification number: G02B15/14 G02B15/173 H04N5/225

    Abstract: A zoom lens includes: a first lens group having a positive refractive power and including a plurality of lenses, a second lens group having a negative refractive power, a third lens group having a positive refractive power, a fourth lens group having a negative refractive power and including one lens, and a fifth lens group having a positive refractive power and including one lens. The first through fifth lens groups are subsequently arranged from an object side. An interval between neighboring lens groups changes during zooming from a wide angle position to a telephoto position. The zoom lens satisfies the following inequality, 0.4≦n1−n2≦0.7, where “n1” denotes a refractive index of a first lens from the object side in the first lens group, and “n2” denotes a refractive index of the second lens from the object side in the first lens group.

    Abstract translation: 变焦透镜包括:具有正屈光力且包括多个透镜的第一透镜组,具有负折光力的第二透镜组,具有正折光力的第三透镜组,具有负折光力的第四透镜组 并且包括一个透镜和具有正折光力并且包括一个透镜的第五透镜组。 随后从物体侧布置第一至第五透镜组。 在从广角位置变焦到长焦位置时,相邻镜头组之间的间隔发生变化。 变焦透镜满足以下不等式:0.4≦̸ n1-n2≦̸ 0.7,其中“n1”表示第一透镜组中的物体侧的第一透镜的折射率,“n2”表示第二透镜组的折射率 第一透镜组中的物体侧的透镜。

    ZOOM LENS AND PHOTOGRAPHING APPARATUS HAVING THE SAME
    20.
    发明申请
    ZOOM LENS AND PHOTOGRAPHING APPARATUS HAVING THE SAME 有权
    变焦镜头和摄影装置

    公开(公告)号:US20140078596A1

    公开(公告)日:2014-03-20

    申请号:US13938444

    申请日:2013-07-10

    Inventor: Dong-woo Kim

    CPC classification number: G02B15/14 G02B15/173 H04N5/225

    Abstract: A zoom lens includes: a first lens group having a positive refractive power and including a plurality of lenses, a second lens group having a negative refractive power, a third lens group having a positive refractive power, a fourth lens group having a negative refractive power and including one lens, and a fifth lens group having a positive refractive power and including one lens. The first through fifth lens groups are subsequently arranged from an object side. An interval between neighboring lens groups changes during zooming from a wide angle position to a telephoto position. The zoom lens satisfies the following inequality, 0.4≦n1−n2≦0.7, where “n1” denotes a refractive index of a first lens from the object side in the first lens group, and “n2” denotes a refractive index of the second lens from the object side in the first lens group.

    Abstract translation: 变焦透镜包括:具有正屈光力且包括多个透镜的第一透镜组,具有负折光力的第二透镜组,具有正折光力的第三透镜组,具有负折光力的第四透镜组 并且包括一个透镜和具有正折光力并且包括一个透镜的第五透镜组。 随后从物体侧布置第一至第五透镜组。 在从广角位置变焦到长焦位置时,相邻镜头组之间的间隔发生变化。 变焦透镜满足以下不等式:0.4≦̸ n1-n2≦̸ 0.7,其中“n1”表示第一透镜组中的物体侧的第一透镜的折射率,“n2”表示第二透镜组的折射率 第一透镜组中的物体侧的透镜。

Patent Agency Ranking