METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    17.
    发明公开

    公开(公告)号:US20230207388A1

    公开(公告)日:2023-06-29

    申请号:US17817077

    申请日:2022-08-03

    Abstract: To manufacture a semiconductor device, a structure is formed by alternately stacking a plurality of first films and a plurality of second films one-by-one on a substrate. A vertical hole is formed to vertically pass through the structure. A carbon-containing barrier film is formed to conformally cover an inner sidewall of the vertical hole. The carbon-containing barrier film is in contact with portions of the plurality of first films and the plurality of second films. A sacrificial metal film is formed on the carbon-containing barrier film in the vertical hole. The sacrificial metal film is removed to expose the carbon-containing barrier film. The carbon-containing barrier film is removed using an ashing process.

    Lithium secondary battery
    18.
    发明授权

    公开(公告)号:US10707529B2

    公开(公告)日:2020-07-07

    申请号:US14982812

    申请日:2015-12-29

    Abstract: A lithium secondary battery including: a cathode including a high-voltage cathode active material; an anode; and an electrolyte disposed between the cathode and the anode, wherein the high-voltage cathode active material has a charge cut-off voltage of about 4.2 Volts or greater with respect to a lithium (Li) counter electrode, and wherein the electrolyte includes an organic fluorinated ether compound represented by Formula 1, an organic solvent, and a lithium salt: R1—O—CFnH2-n—R2  Formula 1 wherein, in Formula 1, R1 is a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 fluorinated alkyl group, or a C3-C10 fluorinated cycloalkyl group; R2 is hydrogen, fluorine, a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 fluorinated alkyl group, or a C3-C10 fluorinated cycloalkyl group; and n is 1 or 2.

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