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11.发明授权公开(公告)号：US09818931B2
公开(公告)日：2017-11-14
申请号：US14981391
申请日：2015-12-28
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Jang-Eun Lee , Gen Feng
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The write current generates joule heating such that the free layer has a switching temperature greater than room temperature. The free layer includes a multilayer that is temperature sensitive and has at least one bilayer. Each bilayer includes first and second layers. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes a magnetic layer. The multilayer has a room temperature coercivity and a switching temperature coercivity. The switching temperature coercivity is not more than one-half of the room temperature coercivity.
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公开(公告)号：US10438638B2
公开(公告)日：2019-10-08
申请号：US15965563
申请日：2018-04-27
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Mohamad Towfik Krounbi , Gen Feng , Vladimir Nikitin
Abstract: A magnetic device and method for providing the device are described. The magnetic device includes magnetic junction(s) and spin-orbit interaction active layer(s) adjacent to the magnetic junction free layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide on the magnetic layer, providing a sacrificial layer on the sacrificial oxide and performing anneal(s) of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide are removed after the anneal(s).
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公开(公告)号：US10276225B2
公开(公告)日：2019-04-30
申请号：US15903926
申请日：2018-02-23
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Dmytro Apalkov , Gen Feng , Mohamad Towfik Krounbi
Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). Each magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than an out-of-plane demagnetization energy. The pinned layer includes a magnetic barrier layer between a magnetic layer and a high PMA layer including at least one nonmagnetic component. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component. The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.
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公开(公告)号：US09966528B2
公开(公告)日：2018-05-08
申请号：US15177176
申请日：2016-06-08
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Mohamad Towfik Krounbi , Gen Feng , Vladimir Nikitin
CPC classification number: H01L43/02 , G11C11/1673 , G11C11/1675 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide layer on the magnetic layer, providing a sacrificial layer on the sacrificial oxide layer and performing at least one anneal of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide layer are removed after the anneal(s).
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公开(公告)号：US20170263859A1
公开(公告)日：2017-09-14
申请号：US15177138
申请日：2016-06-08
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Dmytro Apalkov , Gen Feng , Mohamad Towfik Krounbi
CPC classification number: H01L43/10 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy. The pinned layer includes a high perpendicular magnetic anisotropy (PMA) layer including at least one nonmagnetic component, a magnetic layer and a magnetic barrier layer between the high PMA layer and the magnetic layer. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component of the high PMA layer.
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Patent Agency Ranking
16.发明申请公开(公告)号：US20160197265A1
公开(公告)日：2016-07-07
申请号：US14981391
申请日：2015-12-28
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Jang-Eun Lee , Gen Feng
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The write current generates joule heating such that the free layer has a switching temperature greater than room temperature. The free layer includes a multilayer that is temperature sensitive and has at least one bilayer. Each bilayer includes first and second layers. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes a magnetic layer. The multilayer has a room temperature coercivity and a switching temperature coercivity. The switching temperature coercivity is not more than one-half of the room temperature coercivity.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 写入电流产生焦耳加热，使得自由层具有大于室温的开关温度。 自由层包括温度敏感且具有至少一个双层的多层。 每个双层包括第一层和第二层。 第一层包括磁性过渡金属和稀土的合金。 第二层包括磁性层。 该多层膜具有室温矫顽力和切换温度矫顽力。 开关温度矫顽力不超过室温矫顽力的一半。
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公开(公告)号：US11063209B2
公开(公告)日：2021-07-13
申请号：US15659605
申请日：2017-07-25
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Gen Feng , Mohamad Towfik Krounbi
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, an oxide layer and at least one oxygen blocking layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the pinned layer and the free layer. The oxide layer is adjacent to the free layer. The free layer is between the nonmagnetic spacer layer and the oxide layer. The oxygen blocking layer(s) has a position selected from adjacent to the oxide layer and adjacent to the pinned layer. In some aspects, the magnetic junction may also include an oxygen adsorber layer and/or a tuning layer.
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18.发明申请公开(公告)号：US20180261762A1
公开(公告)日：2018-09-13
申请号：US15603402
申请日：2017-05-23
Applicant: Samsung Electronics Co., LTD.
Inventor： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Shuxia Wang , Gen Feng
CPC classification number: H01L43/08 , G11C11/161 , H01L43/10 , H01L43/12
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.
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公开(公告)号：US20180102474A1
公开(公告)日：2018-04-12
申请号：US15364147
申请日：2016-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Xueti Tang , Mohamad Towfik Krounbi , Donkoun Lee , Gen Feng
CPC classification number: H01L43/08 , G11C11/161 , H01L27/20 , H01L27/22 , H01L27/228 , H01L41/00 , H01L43/10 , H01L43/12
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoxFeyBz]uMot layer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoxFeyBz]uMot layer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.
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公开(公告)号：US20170256702A1
公开(公告)日：2017-09-07
申请号：US15177176
申请日：2016-06-08
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Mohamad Towfik Krounbi , Gen Feng , Vladimir Nikitin
CPC classification number: H01L43/02 , G11C11/1673 , G11C11/1675 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide layer on the magnetic layer, providing a sacrificial layer on the sacrificial oxide layer and performing at least one anneal of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide layer are removed after the anneal(s).
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