公开(公告)号：US09997221B2

公开(公告)日：2018-06-12

申请号：US15399195

申请日：2017-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hangi Jung

IPC: G11C7/00 ,  G11C7/22 ,  G11C7/10 ,  G11C5/14

CPC classification number: G11C7/22 ,  G11C5/148 ,  G11C7/02 ,  G11C7/1057 ,  G11C7/222 ,  G11C11/4072 ,  G11C11/4076 ,  G11C2207/2272

Abstract: An operation control method of a semiconductor memory device includes executing a Delay Locked Loop (DLL) locking in response to a DLL reset signal and measuring a loop delay of a DLL. The operation control method further includes storing measured loop delay information and DLL locking information; and performing a delay control of a command path using the stored loop delay information and DLL locking information independent of the DLL, during a latency control operation.

公开(公告)号：US09978460B2

公开(公告)日：2018-05-22

申请号：US15384843

申请日：2016-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukyong Kang ,  Hangi Jung ,  Hun-Dae Choi

IPC: G11C7/10 ,  G11C29/38 ,  G11C11/4074 ,  G11C11/4093 ,  G11C29/36 ,  G06F13/40 ,  G11C16/34 ,  G11C11/00 ,  G11C29/02 ,  G11C29/50 ,  G11C5/04

CPC classification number: G11C29/38 ,  G06F13/4086 ,  G11C5/04 ,  G11C7/1057 ,  G11C7/1084 ,  G11C11/005 ,  G11C11/4074 ,  G11C11/4093 ,  G11C16/34 ,  G11C29/025 ,  G11C29/36 ,  G11C29/50008

Abstract: A memory module includes a first memory device including a first one-die termination circuit for impedance matching of a signal path and a second memory device sharing the signal path with the first memory device and including a second on-die termination circuit for impedance matching of the signal path, wherein the signal path corresponds to a command or address signal path provided from a host, and the first and second on-die termination circuits are individually controlled according to control of the host.

公开(公告)号：US09564190B2

公开(公告)日：2017-02-07

申请号：US15226310

申请日：2016-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hangi Jung

IPC: G11C7/00 ,  G11C7/22 ,  G11C11/4076 ,  G11C11/4072

CPC classification number: G11C7/22 ,  G11C5/148 ,  G11C7/02 ,  G11C7/1057 ,  G11C7/222 ,  G11C11/4072 ,  G11C11/4076 ,  G11C2207/2272

Abstract: An operation control method of a semiconductor memory device includes executing a Delay Locked Loop (DLL) locking in response to a DLL reset signal and measuring a loop delay of a DLL. The operation control method further includes storing measured loop delay information and DLL locking information; and performing a delay control of a command path using the stored loop delay information and DLL locking information independent of the DLL, during a latency control operation.

Abstract translation: 半导体存储器件的操作控制方法包括响应于DLL复位信号执行延迟锁定环（DLL）锁定并测量DLL的环路延迟。 操作控制方法还包括存储测量的环路延迟信息和DLL锁定信息; 以及在等待时间控制操作期间，使用存储的循环延迟信息和与DLL无关的DLL锁定信息执行命令路径的延迟控制。

公开(公告)号：US09443565B2

公开(公告)日：2016-09-13

申请号：US14219181

申请日：2014-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hangi Jung

IPC: G11C7/02 ,  G11C7/22 ,  G11C11/4072 ,  G11C11/4076

CPC classification number: G11C7/22 ,  G11C5/148 ,  G11C7/02 ,  G11C7/1057 ,  G11C7/222 ,  G11C11/4072 ,  G11C11/4076 ,  G11C2207/2272

Abstract: An operation control method of a semiconductor memory device includes executing a Delay Locked Loop (DLL) locking in response to a DLL reset signal and measuring a loop delay of a DLL. The operation control method further includes storing measured loop delay information and DLL locking information; and performing a delay control of a command path using the stored loop delay information and DLL locking information independent of the DLL, during a latency control operation.

Abstract translation: 半导体存储器件的操作控制方法包括响应于DLL复位信号执行延迟锁定环（DLL）锁定并测量DLL的环路延迟。 操作控制方法还包括存储测量的环路延迟信息和DLL锁定信息; 以及在等待时间控制操作期间，使用存储的循环延迟信息和与DLL无关的DLL锁定信息执行命令路径的延迟控制。