ELECTRONIC DEVICE, SERVER, AND DIGITAL CONTENT PURCHASE METHOD

    公开(公告)号:US20220005007A1

    公开(公告)日:2022-01-06

    申请号:US17291484

    申请日:2019-11-11

    Abstract: An electronic apparatus purchasing digital content separately from use or consumption is disclosed. The electronic apparatus includes a display, a communication interface configured to communicate with a server, a user input interface configured to receive a user input, and a processor configured to: based on a user input requesting a purchase of the digital content via a logged-in first user account, receive information on purchasable digital content from the server; control the display to, based on the received information on the purchasable digital content, display a user interface (UI) indicating the information on the purchasable digital content and information on an external apparatus and a second user account of the external apparatus, which are capable of using the digital content, and based on the user input using the UI, transmit information on a digital content selected to be purchased and information on selected external apparatus and second user account to the server.

    HUMIDIFIER
    12.
    发明申请

    公开(公告)号:US20210172628A1

    公开(公告)日:2021-06-10

    申请号:US17117649

    申请日:2020-12-10

    Abstract: Disclosed herein is a humidifier including an improved structure of a water collection tank. The humidifier includes a main body, a water supply tank provided in an upper portion of the main body, a humidifying fabric arranged in an inside of the main body and disposed below the water supply tank to receive water, a fan configured to move air through the humidifying fabric, a water collection tank configured to collect water from the humidifying fabric, a pump configured to pump water from the water collection tank to the water supply tank, and a humidifier lower cover coupleable to and decoupleable from a lower end of the main body. The water collection tank includes a water collection tank top cover provided in an upper portion of the water collection tank, and a water collection tank lower cover configured to be accessible through the lower end of the main body.

    SEMICONDUCTOR DEVICE INCLUDING THROUGH-ELECTRODES

    公开(公告)号:US20240274509A1

    公开(公告)日:2024-08-15

    申请号:US18610651

    申请日:2024-03-20

    Abstract: A semiconductor device includes: a semiconductor substrate having opposing first side and second sides; an active region and an isolation region on the first side; a circuit device on the active region; a front side interconnection structure on the first side and including front side interconnection layers disposed on different levels; first and second back side interconnection structures below the second side; a buried structure having a portion disposed in the isolation region and including a conductive line; a first through-electrode structure including a first through-electrode contacting the conductive line and penetrating the semiconductor substrate between the conductive line and the first back side interconnection structure; and a second through-electrode structure including a second through-electrode penetrating the semiconductor substrate between a first front side interconnection layer and the second back side interconnection structure. The first front side interconnection layer is on a level higher than that of the conductive line.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230164976A1

    公开(公告)日:2023-05-25

    申请号:US17837314

    申请日:2022-06-10

    CPC classification number: H01L27/10814 H01L27/10823 H01L27/10852

    Abstract: Disclosed is a semiconductor device comprising a substrate, a contact structure that penetrates the substrate, a bottom electrode on the substrate and connected to the contact structure, a dielectric layer that covers the bottom electrode, and a top electrode on the bottom electrode. The dielectric layer separates the top electrode from the bottom electrode. The contact structure includes a lower conductive pattern and an upper conductive pattern on the lower conductive pattern. The upper conductive pattern includes a nitride of a first metal implanted with a dopant.

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