公开(公告)号：US20230164976A1

公开(公告)日：2023-05-25

申请号：US17837314

申请日：2022-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwoon PARK ,  Young-Geun PARK ,  Hojin LEE

IPC: H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10852

Abstract: Disclosed is a semiconductor device comprising a substrate, a contact structure that penetrates the substrate, a bottom electrode on the substrate and connected to the contact structure, a dielectric layer that covers the bottom electrode, and a top electrode on the bottom electrode. The dielectric layer separates the top electrode from the bottom electrode. The contact structure includes a lower conductive pattern and an upper conductive pattern on the lower conductive pattern. The upper conductive pattern includes a nitride of a first metal implanted with a dopant.

公开(公告)号：US20240030277A1

公开(公告)日：2024-01-25

申请号：US18479271

申请日：2023-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin PARK ,  Haeryong KIM ,  Young-Geun PARK

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H01L28/55 ,  H10B12/00 ,  H01L28/65 ,  C23C16/40

Abstract: A semiconductor device includes a capacitor including a lower electrode an upper electrode, and a dielectric layer between the lower electrode and the upper electrode. The lower electrode includes ABO3 where ‘A’ is a first metal element and ‘B’ is a second metal element having a work function greater than that of the first metal element. The dielectric layer includes CDO3 where ‘C’ is a third metal element and ‘D’ is a fourth metal element. The lower electrode includes a first layer and a second layer which are alternately and repeatedly stacked. The first layer includes the first metal element and oxygen. The second layer includes the second metal element and oxygen. The dielectric layer is in contact with the lower electrode at a first contact surface the first contact surface corresponding to the second layer.

公开(公告)号：US20170018604A1

公开(公告)日：2017-01-19

申请号：US15083688

申请日：2016-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-Hyoung AHN ,  Young-Geun PARK ,  Jong-Bom SEO ,  Jae-Hyoung CHOI

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/40 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02161 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/0228 ,  H01L27/10852

Abstract: A method of manufacturing a semiconductor device includes forming a lower metal layer, forming an interfacial oxide film on the lower metal layer, providing a metal precursor on the interfacial oxide film at a first pressure to adsorb the metal precursor into the interfacial oxide film, performing a first purge process at a second pressure to remove the unadsorbed metal precursor, the second pressure lower than the first pressure, providing an oxidizing gas at the first pressure to react with the adsorbed metal precursor, performing a second purge process at the second pressure to remove the unreacted oxidizing gas and form a dielectric film, and forming an upper metal layer on the dielectric film.

Abstract translation: 制造半导体器件的方法包括形成下金属层，在下金属层上形成界面氧化膜，在第一压力下在界面氧化膜上提供金属前体，以将金属前体吸附到界面氧化膜中，执行 在第二压力下的第一吹扫过程以除去未吸附的金属前体，第二压力低于第一压力，在第一压力下提供氧化气体以与吸附的金属前体反应，在第二压力下进行第二吹扫过程 去除未反应的氧化气体并形成电介质膜，并在电介质膜上形成上层金属层。