公开(公告)号：US20220037461A1

公开(公告)日：2022-02-03

申请号：US17189700

申请日：2021-03-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Gihee CHO ,  Sangyeol KANG ,  Jungoo KANG ,  Taekyun KIM ,  Jiwoon PARK ,  Sanghyuck AHN ,  Jin-Su LEE ,  Hyun-Suk LEE ,  Hongsik CHAE

IPC分类号： H01L49/02 ,  H01L27/108

摘要： A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.

公开(公告)号：US20240170214A1

公开(公告)日：2024-05-23

申请号：US18479747

申请日：2023-10-02

申请人： Samsung Electronics Co., Ltd.

发明人： Woochul LEE ,  Cheheung KIM ,  Jiwoon PARK ,  Jooho LEE ,  Hojin LEE

IPC分类号： H01G4/12 ,  H01G4/008 ,  H01G4/30

CPC分类号： H01G4/1218 ,  H01G4/008 ,  H01G4/306

摘要： An electronic device and a manufacturing method including a dielectric layer according to at least some embodiments are disclosed. The electronic device includes a first electrode, a second electrode spaced apart from the first electrode, a first dielectric layer between the first electrode and the second electrode, a second dielectric layer having a rutile phase, a third dielectric layer between the first dielectric layer and the second electrode, and a third dielectric layer between the second dielectric layer and the second electrode and including a material having a higher energy bandgap than a material included in the second dielectric layer.

公开(公告)号：US20230164976A1

公开(公告)日：2023-05-25

申请号：US17837314

申请日：2022-06-10

申请人： Samsung Electronics Co., Ltd.

发明人： Jiwoon PARK ,  Young-Geun PARK ,  Hojin LEE

IPC分类号： H01L27/108

CPC分类号： H01L27/10814 ,  H01L27/10823 ,  H01L27/10852

摘要： Disclosed is a semiconductor device comprising a substrate, a contact structure that penetrates the substrate, a bottom electrode on the substrate and connected to the contact structure, a dielectric layer that covers the bottom electrode, and a top electrode on the bottom electrode. The dielectric layer separates the top electrode from the bottom electrode. The contact structure includes a lower conductive pattern and an upper conductive pattern on the lower conductive pattern. The upper conductive pattern includes a nitride of a first metal implanted with a dopant.

公开(公告)号：US20230102906A1

公开(公告)日：2023-03-30

申请号：US17715473

申请日：2022-04-07

申请人： Samsung Electronics Co., Ltd.

发明人： Changsoo LEE ,  Jinhong KIM ,  Yongsung KIM ,  Jiwoon PARK ,  Jooho LEE ,  Yong-Hee CHO

IPC分类号： H01L49/02 ,  H01L27/108

摘要： A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnO2 doped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.

公开(公告)号：US20220414033A1

公开(公告)日：2022-12-29

申请号：US17670962

申请日：2022-02-14

申请人： Samsung Electronics Co., Ltd.

发明人： Kwangsoo PARK ,  Jae-Sang YUN ,  Su-Jin KIM ,  Jiwoon PARK

IPC分类号： G06F13/16 ,  G06F13/40

摘要： Disclosed is an electronic device which includes a plurality of memory devices, a memory controller, a first signal line that makes electrical connection between the memory controller and a first branch point, a second signal line that makes electrical connection between the first branch point and a second branch point, a third signal line that makes electrical connection between the first branch point and a third branch point, a fourth signal line that electrically connects the second branch point and the first memory device, a fifth signal line that electrically connects the second branch point and the second memory device, a sixth signal line that electrically connects the third branch point and the third memory device, and a stub that includes a first end electrically connected with at least one of the plurality of signal lines, and a second end being left open-circuit.

公开(公告)号：US20220336578A1

公开(公告)日：2022-10-20

申请号：US17857383

申请日：2022-07-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Gihee CHO ,  Sangyeol KANG ,  Jungoo KANG ,  Taekyun KIM ,  Jiwoon PARK ,  Sanghyuck AHN ,  Jin-Su LEE ,  Hyun-Suk LEE ,  Hongsik CHAE

IPC分类号： H01L49/02 ,  H01L27/108

摘要： A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.