中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

39 records (took 0.014 seconds)

    Electronic device
    16.
    外观设计
    Electronic device 有权

    公开(公告)号：USD1016775S1

    公开(公告)日：2024-03-05

    申请号：US29837334

    申请日：2022-05-04

    Applicant: Samsung Electronics Co., Ltd.

    Designer： Ji-Young Lee ,  Hyok-Su Choi ,  Chung-Ha Kim ,  Jong-Bo Jung ,  Min-Young Park

    Abstract: FIG. 1 is a front perspective view of an electronic device showing our new design;
    FIG. 2 is a front elevation view thereof;
    FIG. 3 is a rear elevation view thereof;
    FIG. 4 is a left side elevation view thereof;
    FIG. 5 is a right side elevation view thereof;
    FIG. 6 is a top plan view thereof;
    FIG. 7 is a bottom plan view thereof; and,
    FIG. 8 is a rear perspective view thereof.
    The evenly dashed broken lines in the figures illustrate portions of the electronic device that form no part of the claimed design.

    Nonvolatile memory devices
    19.
    发明授权
    Nonvolatile memory devices 有权

    公开(公告)号：US11238942B2

    公开(公告)日：2022-02-01

    申请号：US17023556

    申请日：2020-09-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung-Bum Kim ,  Il-Han Park ,  Ji-Young Lee ,  Su-Chang Jeon

    IPC: G11C16/26 ,  G11C11/56 ,  G11C16/04 ,  G11C16/24 ,  H01L25/065 ,  H01L23/00 ,  H01L25/18

    Abstract: Nonvolatile memory device includes memory cell region including a first metal pad and a second metal pad, peripheral circuit region including a third metal pad and a fourth metal pad, vertically connected to the memory cell region. The nonvolatile memory device includes a page buffer circuit including page buffers to sense data from selected memory cells, each including two sequential sensing operations to determine one data state, and each of the page buffers including a latch to sequentially store results of the two sequential sensing operations. The nonvolatile memory device includes control circuit in the peripheral circuit region, to control the page buffers to store result of the first read operation, reset the latches after completion of the first read operation, and control the page buffers to perform the second read operation based on a valley determined based on the result of the first read operation.

Patent Agency Ranking