公开(公告)号：US11903199B2

公开(公告)日：2024-02-13

申请号：US17351486

申请日：2021-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeeyong Kim ,  Junghwan Lee

IPC: H10B43/27 ,  H01L23/522 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

CPC classification number: H10B43/27 ,  H01L23/5226 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: A through via structure includes a through via and a capping pattern. The through via includes a metal pattern extending in a vertical direction, and a barrier pattern on a sidewall and a lower surface of the metal pattern. The capping pattern contacts an upper surface of the through via. A lowermost surface of an edge portion of the capping pattern is not higher than a lowermost surface of a central portion of the capping pattern.

公开(公告)号：US20130249053A1

公开(公告)日：2013-09-26

申请号：US13764243

申请日：2013-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan Lee

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L27/0805 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/91

Abstract: A memory device includes a substrate and a plurality of vertical storage nodes linearly spaced apart on the substrate along a first direction. The device further includes at least one support pattern abutting sidewalls of the storage nodes, the at least one support pattern having portions that bridge first pairs of adjacent ones of the storage nodes and openings therein that separate second pairs of adjacent ones of the storage nodes. First distances between the storage nodes of the respective first pairs may be greater than second distances between the storage nodes of the respective second pairs. Methods of fabricating such devices are also described.

Abstract translation: 存储器件包括衬底和沿着第一方向在衬底上线性间隔开的多个垂直存储节点。 所述装置还包括邻接所述存储节点的侧壁的至少一个支撑图案，所述至少一个支撑图案具有跨越所述存储节点中的第一对相邻存储节点和开口的部分，所述第一对存储节点中的开口与所述存储节点中相邻的第二对存储节点分开。 各个第一对的存储节点之间的第一距离可以大于相应的第二对的存储节点之间的第二距离。 还描述了制造这种装置的方法。