公开(公告)号：US09508644B2

公开(公告)日：2016-11-29

申请号：US14929737

申请日：2015-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-kwon Kim ,  Ki-il Kim ,  Ah-young Cheon ,  Myeong-cheol Kim ,  Yong-jin Kim

IPC: H01L23/00 ,  H01L23/528 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L23/48

CPC classification number: H01L23/5283 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3086 ,  H01L21/32139 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a pattern includes forming a mask pattern on a substrate; etching the substrate by deep reactive ion etching (DRIE) and by using the mask pattern as an etch mask; partially removing the mask pattern to expose a portion of an upper surface of the substrate; and etching the exposed portion of the upper surface of the substrate. In the method, when a pattern is formed by DRIE, an upper portion of the pattern does not protrude or scarcely protrudes, and scallops of a sidewall of the pattern are smooth, and thus a conformal material layer may be easily formed on a surface of the pattern.