公开(公告)号：US09129696B2

公开(公告)日：2015-09-08

申请号：US14340773

申请日：2014-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun Joo ,  Kiwhan Song ,  Ju Seok Lee ,  Kihwan Choi

IPC: G11C16/08 ,  G11C16/26 ,  G11C11/56 ,  G11C16/04

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C2211/563

Abstract: A soft-decision read method of a nonvolatile memory device includes receiving a soft-decision read command, applying a read voltage to a selected word line, pre-charging bit lines respectively connected to selected memory cells of the selected word line, continuously sensing states of the selected memory cells. The pre-charged voltages of the bit lines and the read voltage supplied to the selected word line are not varied during the sensing states of the selected memory cells.

Abstract translation: 非易失性存储器件的软判决读取方法包括：接收软判决读命令，将读电压施加到所选择的字线，对分别连接到所选字线的选定存储单元的位线进行预充电，连续检测状态 的所选存储单元。 提供给所选字线的位线的预充电电压和读取电压在所选存储单元的感测状态期间不改变。