公开(公告)号：US11232841B2

公开(公告)日：2022-01-25

申请号：US17010681

申请日：2020-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-Hwan Park ,  Wan-Dong Kim

IPC: G11C11/34 ,  G11C16/24 ,  G11C16/34 ,  G06F13/16 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C11/56 ,  H01L27/11582 ,  G11C16/14 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: A memory device can include a memory block operatively connected to a common source line and a plurality of bit lines, wherein the memory block includes first and second sub-blocks each having a respective position in the memory block relative to the common source line and the plurality of bit lines. The memory device can be operated by receiving a command and an address from outside the memory device and performing a precharge operation on the memory block in response to the command, using a first precharge path through the memory block or a second precharge path through the memory block based on the respective position of the first or second sub-block that includes a word line that is configured to activate responsive to the address.

公开(公告)号：US10971235B2

公开(公告)日：2021-04-06

申请号：US16840290

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-Hwan Park ,  Wan-Dong Kim

IPC: G11C11/34 ,  G11C16/24 ,  G11C11/56 ,  G11C16/34 ,  G06F13/16 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C16/14 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: A memory device can include a memory block operatively connected to a common source line and a plurality of bit lines, wherein the memory block includes first and second sub-blocks each having a respective position in the memory block relative to the common source line and the plurality of bit lines. The memory device can be operated by receiving a command and an address from outside the memory device and performing a precharge operation on the memory block in response to the command, using a first precharge path through the memory block or a second precharge path through the memory block based on the respective position of the first or second sub-block that includes a word line that is configured to activate responsive to the address.

公开(公告)号：US08766923B2

公开(公告)日：2014-07-01

申请号：US13939576

申请日：2013-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-Hwan Park

IPC: G06F3/023 ,  G06F3/041 ,  G06F3/02

CPC classification number: G06F3/0234 ,  G06F3/018 ,  G06F3/0219 ,  G06F3/0412 ,  G06F3/04883

Abstract: A character input apparatus and method in a terminal are provided, in which a touch screen displays a first key set and a second key set. The first key set includes first letter keys with all consonants and a second letter key with symbols indicating Tone Marks (Tms) and positions of predetermined vowels, for inputting all vowels and Tms. The second key set includes the predetermined vowels or Tms. Upon selection of a symbol by the second letter key, the controller controls the touch screen to display the second key set and receives at least one letter by the first key set and the second key set.

Abstract translation: 提供了一种终端中的字符输入装置和方法，其中触摸屏显示第一密钥集和第二密钥集。 第一个键集包括具有所有辅音的第一个字母键和带有指示音标（Tms）的符号的第二个字母键和预定元音的位置，用于输入所有元音和Tms。 第二个键集包括预定的元音或Tms。 在通过第二字母键选择符号时，控制器控制触摸屏以显示第二密钥组，并且通过第一密钥集合和第二密钥集合接收至少一个字母。