Analog signal generation circuit
    11.
    发明授权
    Analog signal generation circuit 有权
    模拟信号发生电路

    公开(公告)号:US09544520B2

    公开(公告)日:2017-01-10

    申请号:US14694409

    申请日:2015-04-23

    CPC classification number: H04N5/378 H03M1/1295 H03M1/56

    Abstract: An analog signal generation circuit is provided. The analog signal generation circuit includes a first control section that generates a first control signal; a second control section that generates a second control signal; current cells, each of the plurality of current cells controlled to generate current or to not generate current based on the first and second control signals; and an analog signal output section that outputs an analog signal generated based on current generated by the current cells. The first control signal includes first and second cell state setting signals. A logical value corresponding to the first cell state setting signal is complementary to a logical value corresponding to the second cell state setting signal. Each current cell has an initialized state based on the first cell state setting signal.

    Abstract translation: 提供模拟信号发生电路。 模拟信号发生电路包括产生第一控制信号的第一控制部分; 产生第二控制信号的第二控制部分; 所述多个当前单元中的每一个被控制为基于所述第一和第二控制信号产生电流或不产生电流; 以及模拟信号输出部,其输出基于当前单元产生的电流而生成的模拟信号。 第一控制信号包括第一和第二单元状态设置信号。 对应于第一单元状态设置信号的逻辑值与对应于第二单元状态设置信号的逻辑值互补。 每个当前单元基于第一单元状态设置信号具有初始化状态。

    CMOS IMAGE SENSORS INCLUDING AN ISOLATION REGION ADJACENT A LIGHT-RECEIVING REGION
    13.
    发明申请
    CMOS IMAGE SENSORS INCLUDING AN ISOLATION REGION ADJACENT A LIGHT-RECEIVING REGION 有权
    CMOS图像传感器,包括隔离区域附近的收光区域

    公开(公告)号:US20140361355A1

    公开(公告)日:2014-12-11

    申请号:US14268230

    申请日:2014-05-02

    CPC classification number: H01L27/1463 H01L27/14627 H01L27/1464 H01L27/14643

    Abstract: CMOS image sensors are provided. A CMOS image sensor may include a semiconductor substrate including a light-receiving region and a logic region adjacent the light-receiving region. The CMOS image sensor may include a photoelectric conversion region in the light-receiving region. Moreover, the CMOS image sensor may include an isolation region including an interface with a sidewall of the photoelectric conversion region. The isolation region may include a first refractive index that is smaller than a second refractive index of the semiconductor substrate, and the isolation region may be between the logic region and the sidewall of the photoelectric conversion region.

    Abstract translation: 提供CMOS图像传感器。 CMOS图像传感器可以包括包括光接收区域和与光接收区域相邻的逻辑区域的半导体衬底。 CMOS图像传感器可以包括光接收区域中的光电转换区域。 此外,CMOS图像传感器可以包括包括与光电转换区域的侧壁的界面的隔离区域。 隔离区域可以包括小于半导体衬底的第二折射率的第一折射率,并且隔离区域可以在光电转换区域的逻辑区域和侧壁之间。

Patent Agency Ranking