Abstract:
An analog signal generation circuit is provided. The analog signal generation circuit includes a first control section that generates a first control signal; a second control section that generates a second control signal; current cells, each of the plurality of current cells controlled to generate current or to not generate current based on the first and second control signals; and an analog signal output section that outputs an analog signal generated based on current generated by the current cells. The first control signal includes first and second cell state setting signals. A logical value corresponding to the first cell state setting signal is complementary to a logical value corresponding to the second cell state setting signal. Each current cell has an initialized state based on the first cell state setting signal.
Abstract:
An image sensor is provided which includes a plurality of unit pixels, ones of which are configured to convert an input light signal into at least four frame signals. The image sensor also includes a signal processor that is configured to measure a distance from an object based on the at least four frame signals from one of the plurality of unit pixels.
Abstract:
CMOS image sensors are provided. A CMOS image sensor may include a semiconductor substrate including a light-receiving region and a logic region adjacent the light-receiving region. The CMOS image sensor may include a photoelectric conversion region in the light-receiving region. Moreover, the CMOS image sensor may include an isolation region including an interface with a sidewall of the photoelectric conversion region. The isolation region may include a first refractive index that is smaller than a second refractive index of the semiconductor substrate, and the isolation region may be between the logic region and the sidewall of the photoelectric conversion region.