公开(公告)号：US20230117646A1

公开(公告)日：2023-04-20

申请号：US17952808

申请日：2022-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung LEE ,  Whankyun KIM ,  Eunsun NOH ,  Junho JEONG ,  YoungJun CHO

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device includes a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate. The diffusion barrier pattern includes a first non-magnetic metal and oxygen. The non-magnetic pattern includes a second non-magnetic metal and oxygen. An oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal.

公开(公告)号：US20220320418A1

公开(公告)日：2022-10-06

申请号：US17502411

申请日：2021-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Whankyun KIM ,  Joonmyoung LEE ,  Junho JEONG ,  Eunsun NOH ,  Jeong-Heon PARK ,  YoungJun CHO

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetic memory device including a substrate; a first and second magnetic pattern stacked on the substrate; a tunnel barrier pattern between the first and second magnetic pattern; a bottom electrode between the substrate and the first magnetic pattern; a seed pattern between the bottom electrode and the first magnetic pattern; and a diffusion barrier pattern between the bottom electrode and the seed pattern, wherein a bottom surface of the at least one diffusion barrier pattern is in contact with a top surface of the bottom electrode, and a top surface of the at least one diffusion barrier pattern is in contact with a bottom surface of the seed pattern, the at least one diffusion barrier pattern includes a non-magnetic metal, or an alloy of the non-magnetic metal and a non-metal element, and the non-magnetic metal includes Ta, W, Nb, Ti, Cr, Zr, Hf, Mo, Al, Mg, or V.

公开(公告)号：US20210367142A1

公开(公告)日：2021-11-25

申请号：US16950009

申请日：2020-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Chul LEE ,  Whankyun KIM ,  Joonmyoung LEE ,  Junho JEONG

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/14 ,  G11C11/16 ,  G11C11/18

Abstract: A magnetic memory device including a lower electrode on a substrate; a conductive line on the lower electrode; and a magnetic tunnel junction pattern on the conductive line, wherein the conductive line includes a first conductive line adjacent to the magnetic tunnel junction pattern; a second conductive line between the lower electrode and the first conductive line; and a high resistance layer at least partially between the first conductive line and the second conductive line, a resistivity of the second conductive line is lower than a resistivity of the first conductive line, and a resistivity of the high resistance layer is higher than the resistivity of the first conductive line and higher than the resistivity of the second conductive line.