公开(公告)号：US12146086B2

公开(公告)日：2024-11-19

申请号：US18310830

申请日：2023-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Eun Joo Jang

IPC: C09K11/02 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/62 ,  C09K11/88 ,  G02F1/1335 ,  G02F1/13357 ,  H10K50/115

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same. The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

公开(公告)号：US11999887B2

公开(公告)日：2024-06-04

申请号：US18182428

申请日：2023-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Sungwoo Hwang ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Soo Kyung Kwon ,  Seon-Yeong Kim

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C01B19/00 ,  C01G9/08 ,  C09K11/56 ,  F21V8/00 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38

CPC classification number: C09K11/883 ,  C01B19/00 ,  C01G9/08 ,  C09K11/565 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2002/74 ,  C01P2006/60 ,  G02B6/005

Abstract: A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.

公开(公告)号：US11987739B2

公开(公告)日：2024-05-21

申请号：US18318053

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong Kim ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Jihyun Min ,  Sungwoo Hwang ,  Eun Joo Jang

IPC: C09K11/88 ,  C01G9/00 ,  C01G9/08 ,  C09K11/06 ,  C09K11/54 ,  C09K11/56 ,  G02F1/13357 ,  H10K59/38 ,  F21V8/00 ,  G02F1/1335

CPC classification number: C09K11/883 ,  C01G9/006 ,  C01G9/08 ,  C09K11/06 ,  C09K11/54 ,  C09K11/565 ,  G02F1/133621 ,  H10K59/38 ,  C01P2004/64 ,  C01P2004/90 ,  C01P2006/60 ,  G02B6/005 ,  G02F1/133614 ,  G02F2202/36

Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

公开(公告)号：US11739263B2

公开(公告)日：2023-08-29

申请号：US16851520

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Ji-Yeong Kim

IPC: C09K11/88 ,  C09K11/02 ,  F21V8/00 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/08 ,  C09K11/56 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/025 ,  C09K11/0805 ,  C09K11/562 ,  C09K11/88 ,  G02B6/005 ,  G02F1/133617 ,  H01L27/322 ,  H01L27/3244 ,  B82Y20/00 ,  B82Y40/00

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

公开(公告)号：US11674078B2

公开(公告)日：2023-06-13

申请号：US17401410

申请日：2021-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/62 ,  H10K50/115 ,  G02F1/13357 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/1335 ,  H01L51/50

CPC classification number: C09K11/025 ,  C09K11/623 ,  G02F1/133615 ,  G02F1/133617 ,  H01L51/502 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/133614 ,  G02F2202/36

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same.
The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

公开(公告)号：US11091690B2

公开(公告)日：2021-08-17

申请号：US16431772

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/62 ,  H01L51/50 ,  G02F1/13357 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/1335

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same.
The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

公开(公告)号：US12187941B2

公开(公告)日：2025-01-07

申请号：US17866983

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Yong Wook Kim ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/54 ,  C09K11/56 ,  H01L33/06 ,  H01L33/28

Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.

公开(公告)号：US12152184B2

公开(公告)日：2024-11-26

申请号：US17243741

申请日：2021-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Seon-Yeong Kim ,  Ji-Yeong Kim ,  Jihyun Min ,  Eun Joo Jang ,  Seonmyeong Choi ,  Sungwoo Hwang

IPC: C09K11/88 ,  C09K11/56 ,  H10K85/10 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115 ,  H10K50/16 ,  H10K50/17

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, and selenium, sulfur, or a combination thereof, wherein the quantum dot does not include cadmium, a mole ratio of tellurium relative to selenium in the first semiconductor nanocrystal is greater than about 1:1, a mole ratio of a sum of selenium and sulfur relative to in the quantum dot is greater than about 1:1, a wavelength of a maximum emission peak of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and the quantum dot has quantum efficiency (QY) of greater than or equal to about 30%, a quantum dot-polymer composite including the quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the quantum dot.

公开(公告)号：US12049581B2

公开(公告)日：2024-07-30

申请号：US18105911

申请日：2023-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Yeong Kim ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Yong Wook Kim ,  Eun Joo Jang

IPC: C09K11/54 ,  C09K11/02 ,  C09K11/57 ,  C09K11/58 ,  C09K11/64 ,  C09K11/88 ,  B82Y20/00

CPC classification number: C09K11/54 ,  C09K11/02 ,  C09K11/57 ,  C09K11/58 ,  C09K11/64 ,  C09K11/88 ,  B82Y20/00

Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.

公开(公告)号：US20230220279A1

公开(公告)日：2023-07-13

申请号：US18182428

申请日：2023-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Sungwoo HWANG ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Soo Kyung KWON ,  Seon-Yeong Kim

IPC: C09K11/88 ,  C09K11/56 ,  C01G9/08 ,  C01B19/00 ,  B82Y40/00 ,  F21V8/00 ,  B82Y20/00

CPC classification number: C09K11/883 ,  H10K59/38 ,  H10K50/115 ,  C09K11/565 ,  C01G9/08 ,  C01B19/00 ,  H10K59/12 ,  C01P2006/60 ,  B82Y40/00 ,  G02B6/005 ,  C01P2002/74 ,  B82Y20/00

Abstract: A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.