公开(公告)号：US20190074175A1

公开(公告)日：2019-03-07

申请号：US16183927

申请日：2018-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Takanori KOIDE ,  Naoki YAMADA ,  Jae-soon LIM ,  Tsubasa SHIRATORI ,  Youn-joung CHO

IPC: H01L21/02 ,  H01L49/02 ,  C23C16/455 ,  C07F9/00 ,  C23C16/44 ,  C23C16/40 ,  C23C16/34 ,  C23C16/16

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

公开(公告)号：US20180076024A1

公开(公告)日：2018-03-15

申请号：US15455879

申请日：2017-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyu-hee PARK ,  Jae-soon LIM ,  Youn-joung CHO ,  Myong-woon KIM ,  Sang-ick LEE ,  Sung-duck LEE ,  Sung-woo CHO

IPC: H01L21/02 ,  H01L21/311 ,  H01L27/11582 ,  C09D1/00 ,  C09D5/24 ,  C07F5/06

CPC classification number: H01L21/02178 ,  C07F5/062 ,  C09D1/00 ,  C09D5/24 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11582

Abstract: An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.