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    Image sensors
    12.
    发明授权
    Image sensors 有权

    公开(公告)号：US12170299B2

    公开(公告)日：2024-12-17

    申请号：US18297679

    申请日：2023-04-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bomi Kim ,  BumSuk Kim ,  Jung-Saeng Kim ,  Yun Ki Lee ,  Taesub Jung

    IPC: H01L27/146 ,  H04N25/40

    Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.

    Image sensor
    13.
    发明授权
    Image sensor 有权

    公开(公告)号：US11784202B2

    公开(公告)日：2023-10-10

    申请号：US17739640

    申请日：2022-05-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun Ki Lee ,  Jung-Saeng Kim ,  Hyungeun Yoo

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14612

    Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

    IMAGE SENSOR WITH PIXELS HAVING UNIFORM SENSITIVITY
    15.
    发明申请
    IMAGE SENSOR WITH PIXELS HAVING UNIFORM SENSITIVITY 有权

    公开(公告)号：US20220285415A1

    公开(公告)日：2022-09-08

    申请号：US17453253

    申请日：2021-11-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong Min Keum ,  Yun Ki Lee ,  Jun Sung Park ,  Dong Kyu Lee ,  Bum Suk Kim ,  Kwang Hee Lee ,  Tae Sung Lee

    IPC: H01L27/146

    Abstract: An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.

    Back side illumination image sensors and electronic device including the same
    16.
    发明授权
    Back side illumination image sensors and electronic device including the same 有权

    公开(公告)号：US11101314B2

    公开(公告)日：2021-08-24

    申请号：US16775481

    申请日：2020-01-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yun Ki Lee ,  Jong Hoon Park ,  Jun Sung Park

    IPC: H01L27/146 ,  H01L27/32

    Abstract: In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

    Image sensors and methods of forming the same
    17.
    发明授权
    Image sensors and methods of forming the same 有权

    公开(公告)号：US11081514B2

    公开(公告)日：2021-08-03

    申请号：US16907890

    申请日：2020-06-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yun Ki Lee

    IPC: H01L27/146 ,  H04N5/361

    Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

    Image sensors including non-aligned grid patterns
    20.
    发明授权
    Image sensors including non-aligned grid patterns 有权

    公开(公告)号：US10229950B2

    公开(公告)日：2019-03-12

    申请号：US15458617

    申请日：2017-03-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yun Ki Lee ,  Joonkyoung Lee

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a plurality of pixels in the substrate, and having a lower surface adjacent the first surface of the substrate and an upper surface adjacent the second surface of the substrate. Each of the pixels includes a photoelectric conversion element, a floating diffusion region adjacent the first surface of the substrate, and a grid pattern on the second surface of the substrate. At least one of the grid patterns is not vertically aligned with the first device isolation layer.

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