公开(公告)号：US20200279885A1

公开(公告)日：2020-09-03

申请号：US16878208

申请日：2020-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

公开(公告)号：US10211245B2

公开(公告)日：2019-02-19

申请号：US15625117

申请日：2017-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Chan Kim ,  Dong Ki Min ,  Kwang Hyun Lee ,  Yo Hwan Noh ,  Se Hwan Yun ,  Dae Kwan Kim ,  Young Jin Kim ,  Wang Hyun Kim ,  Hyuk Soon Choi

IPC: H01L27/146 ,  H04N5/374 ,  H04N9/04 ,  G02B5/20 ,  G02B3/00 ,  H04N5/347 ,  H04N5/353 ,  H04N5/355 ,  H04N5/378 ,  H04N5/3745

Abstract: An image sensor according to an example embodiment concepts includes a pixel array including pixels, and each of the pixels includes photoelectric conversion elements. The photoelectric conversion elements independently operating to detect a phase difference. The image sensor further includes a control circuit configured to independently control exposure times of each of the photoelectric conversion elements included in each of the pixels.

公开(公告)号：US20170104020A1

公开(公告)日：2017-04-13

申请号：US15290560

申请日：2016-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Seounghyun Kim ,  Hyuk An ,  Yun Ki Lee ,  Hyuk Soon Choi

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure. First and second different color filters (e.g., green and red) may be disposed on respective ones of the first and second pixel regions

公开(公告)号：US11804506B2

公开(公告)日：2023-10-31

申请号：US17157205

申请日：2021-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

公开(公告)号：US10943937B2

公开(公告)日：2021-03-09

申请号：US16878208

申请日：2020-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

公开(公告)号：US20190148447A1

公开(公告)日：2019-05-16

申请号：US16248202

申请日：2019-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuk Soon Choi ,  Jung Bin Yun ,  Jungchak Ahn

IPC: H01L27/146

Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.

公开(公告)号：US09818781B2

公开(公告)日：2017-11-14

申请号：US14816396

申请日：2015-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Ho Lee ,  Jung Chak Ahn ,  Hyuk Soon Choi

IPC: H01L27/14 ,  H01L27/146 ,  H04N5/369 ,  H04N5/3745

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/3696 ,  H04N5/3745

Abstract: An image pixel includes a plurality of photodiodes formed in a semiconductor substrate, and a plurality of trenches. Each photodiode is configured to accumulate a plurality of photocharges corresponding to the intensity of light received at each photodiode through a microlens. The plurality of trenches is configured to electrically isolate the photodiodes from one another.

公开(公告)号：US20240006444A1

公开(公告)日：2024-01-04

申请号：US18468038

申请日：2023-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

公开(公告)号：US10700115B2

公开(公告)日：2020-06-30

申请号：US16248202

申请日：2019-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuk Soon Choi ,  Jung Bin Yun ,  Jungchak Ahn

IPC: H01L27/146

Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.

公开(公告)号：US10672817B2

公开(公告)日：2020-06-02

申请号：US16189008

申请日：2018-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.