摘要:
A scheme for detecting a symbol timing (synchronization) of an Orthogonal Frequency Division Multiplexing (OFDM) system in which a transmitting end inserts a Cyclic Prefix (CP) and/or a Cyclic Suffix (CS) in an OFDM symbol for transmission, and a receiving end uses a new timing metric to detect a timing (synchronization) of the OFDM symbol based on a maximum value of the timing metric, whereby when applying the method for detecting the symbol timing of the OFDM system according to the present invention, the symbol timing can be obtained more precisely, to thusly enable stabilizing of performances of the OFDM system.
摘要:
A method of retransmitting packet data in a wireless communication system comprises receiving a link map information element from a transmitting station having three antennas to achieve space time transmit diversity, wherein first, second and third packet data are transmitted from first, second and third antenna of the transmitting station, respectively. The method also comprises transmitting a non-acknowledgement signal to the transmitting station if at least one packet data from the transmitting station is not properly decoded. The method also comprises receiving the packet data from the transmitting station, wherein at least two of retransmitted packet data are transmitted from different antennas of the transmitting station, and one of retransmitted packet data is transmitted from the same antenna of the transmitting station. The retransmitted packet data are received with an information element comprising a retransmission count associated with a number of retransmission made by the transmitting station.
摘要:
The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof. An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.