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    Semiconductor structure made using improved simultaneous multiple ion implantation process
    14.
    发明授权
    Semiconductor structure made using improved simultaneous multiple ion implantation process 有权
    使用改进的同时多离子注入工艺制成的半导体结构

    公开(公告)号：US08008175B1

    公开(公告)日：2011-08-30

    申请号：US12950440

    申请日：2010-11-19

    申请人： Sarko Cherekdjian

    发明人： Sarko Cherekdjian

    IPC分类号： H01L21/00

    CPC分类号： H01L21/26506 ,  H01J37/3007 ,  H01J37/3171 ,  H01L21/26566 ,  H01L21/2658

    摘要： Methods and apparatus provide for: a first source of plasma (first plasma), which includes a first species of ions, directing the first plasma out along a first axis; a second source of plasma (second plasma), which includes a second, differing, species of ions, directing the second plasma out along a second axis; and an accelerator system in communication with the first and second sources of plasma, and operating to: (i) accelerate the first species of ions at a first magnitude therethrough, and toward a semiconductor wafer, and (ii) simultaneously accelerate the second species of ions at a second magnitude, different from the first magnitude, therethrough, and toward the semiconductor wafer.

    摘要翻译： 方法和装置提供：第一等离子体源（第一等离子体），其包括第一种离子，沿着第一轴引导第一等离子体; 第二等离子体源（第二等离子体），其包括第二不同种类的离子，将第二等离子体沿着第二轴引导; 以及加速器系统，其与所述第一和第二等离子体源连通，并且操作为：（i）以超过其的第一大小并朝向半导体晶片加速所述第一离子种类，并且（ii）同时加速所述第二种类的 第二幅度的离子，不同于第一幅度，穿过其中并朝向半导体晶片。

    SEMICONDUCTOR STRUCTURE MADE USING IMPROVED PSEUDO-SIMULTANEOUS MULTIPLE ION IMPLANTATION PROCESS
    16.
    发明申请
    SEMICONDUCTOR STRUCTURE MADE USING IMPROVED PSEUDO-SIMULTANEOUS MULTIPLE ION IMPLANTATION PROCESS 有权
    使用改进的PSEUDO同时多次离子植入过程的半导体结构

    公开(公告)号：US20120126147A1

    公开(公告)日：2012-05-24

    申请号：US12950416

    申请日：2010-11-19

    申请人： Sarko Cherekdjian

    发明人： Sarko Cherekdjian

    IPC分类号： G21K5/10

    CPC分类号： H01J37/3007 ,  H01J37/3171 ,  H01J2237/0825 ,  H01J2237/20 ,  H01L21/76254

    摘要： Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.

    摘要翻译： 方法和装置提供：源同时产生包括第一种离子的第一等离子体，以及第二等离子体，其包括第二种不同的离子种类; 包括分析器磁体的加速器系统，其同时协作：（i）沿着初始轴加速第一和第二等离子体，（ii）改变来自第一等离子体的第一种离子的轨迹，由此产生至少一个第一 沿着与初始轴线横向的第一轴线的离子束，以及（iii）改变来自第二等离子体的第二种离子的轨迹，从而沿着第二轴线产生至少一个第二离子束，该第二离子束横向于 初始轴和第一轴; 以及光束处理系统，其操作以同时将第一和第二离子束朝向半导体晶片引导，使得第一和第二种离子轰击半导体晶片的注入表面以在其中产生剥离层。