公开(公告)号：US06727027B2

公开(公告)日：2004-04-27

申请号：US10020987

申请日：2001-12-19

申请人： Tetsushi Tsukamoto ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Yukio Inazuki ,  Tsutomu Shinagawa ,  Satoshi Okazaki

发明人： Tetsushi Tsukamoto ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Yukio Inazuki ,  Tsutomu Shinagawa ,  Satoshi Okazaki

IPC分类号： G03F900

CPC分类号： G03F1/50 ,  G03F1/38

摘要： In the manufacture of a photomask blank, a seed layer of a chromium material containing oxygen, nitrogen and/or carbon is formed on a transparent substrate before a light-shielding film and an antireflective film are deposited thereon. Any film on the seed layer builds up in accordance with fine granular growth, and so the resulting photomask blank has an improved surface roughness, which enables high-sensitivity detection in the process of defect inspection and circuit pattern inspection. By lithographically patterning the photomask blank, a photomask is fabricated.

摘要翻译： 在光掩模坯料的制造中，在其上沉积有遮光膜和抗反射膜之前，在透明基板上形成含有氧，氮和/或碳的铬材料的晶种层。 种子层上的任何薄膜均按照细颗粒生长形成，因此得到的光掩模坯料具有改善的表面粗糙度，这使得能够在缺陷检查和电路图形检查的过程中进行高灵敏度检测。 通过光刻图案化光掩模坯料，制造光掩模。

公开(公告)号：US06641958B2

公开(公告)日：2003-11-04

申请号：US09902645

申请日：2001-07-12

申请人： Yukio Inazuki ,  Tamotsu Maruyama ,  Mikio Kojima ,  Hideo Kaneko ,  Masataka Watanabe ,  Satoshi Okazaki

发明人： Yukio Inazuki ,  Tamotsu Maruyama ,  Mikio Kojima ,  Hideo Kaneko ,  Masataka Watanabe ,  Satoshi Okazaki

IPC分类号： G03F900

CPC分类号： G03F1/32

摘要： A phase shift mask blank includes a transparent substrate and a phase shift film composed primarily of a metal and silicon. The substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching, such that the etch selectivity B/A is at least 5.0. When a phase shift mask is manufactured from the blank, the substrate is less prone to overetching, providing good controllability and in-plane uniformity of the phase shift in patterned areas. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.

公开(公告)号：US5989985A

公开(公告)日：1999-11-23

申请号：US884634

申请日：1997-06-27

申请人： Tamotsu Maruyama ,  Shigeyuki Sato

发明人： Tamotsu Maruyama ,  Shigeyuki Sato

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/304

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/02532 ,  Y10S117/902 ,  Y10S438/974 ,  Y10S438/978 ,  Y10T428/219

摘要： In a semiconductor single crystalline substrate provided with a protecting film to prevent autodoping on the reverse surface thereof, for growing a vapor-phase epitaxial layer on the main obverse surface thereof, a width of a chamfer is set for locating an edge-crown occurred in consequence of a vapor-phase epitaxial growth on the chamfer, and a gap of a distance is formed between a periphery of the protecting film and an innermost part of the chamfer on the reverse surface.

摘要翻译： 在设置有保护膜以防止其反面上的自掺杂的半导体单晶衬底中，为了在其主表面上生长气相外延层，设置倒角的宽度以定位在 倒角上的气相外延生长的结果，在保护膜的周边与反面的倒角的最内部之间形成距离的间隙。

公开(公告)号：US5882401A

公开(公告)日：1999-03-16

申请号：US908963

申请日：1997-08-08

申请人： Tamotsu Maruyama ,  Hiroki Ose

发明人： Tamotsu Maruyama ,  Hiroki Ose

IPC分类号： H01L21/205 ,  C30B33/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/304 ,  H01L21/31 ,  H01L29/06 ,  C30B25/02

CPC分类号： H01L21/2205 ,  C30B29/06 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/0657

摘要： A method for manufacturing a silicon single crystal substrate for use of an epitaxial layer growth. The method comprises the steps of: growing a CVD film on a rear surface and a peripheral side portion, of the silicon single crystal substrate; removing a portion of the CVD film on the peripheral side portion in the vicinity of a main surface of the silicon single crystal substrate, which was grown over an end of the peripheral side portion, by an abrasive tape grinding; and thereafter mirror-polishing the main surface of the silicon single crystal substrate.

摘要翻译： 一种用于制造用于外延层生长的硅单晶衬底的方法。 该方法包括以下步骤：在硅单晶衬底的后表面和周边部分上生长CVD膜; 通过研磨带研磨去除在周边侧部分的一端生长的硅单晶衬底的主表面附近的周边侧部分的CVD膜的一部分; 然后对硅单晶衬底的主表面进行镜面抛光。

公开(公告)号：US5751055A

公开(公告)日：1998-05-12

申请号：US385544

申请日：1995-02-08

申请人： Tamotsu Maruyama ,  Shigeyuki Sato

发明人： Tamotsu Maruyama ,  Shigeyuki Sato

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/304 ,  H01L29/06

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/02532 ,  Y10S117/902 ,  Y10S438/974 ,  Y10S438/978 ,  Y10T428/219

摘要： In a semiconductor single crystalline substrate provided with a protecting film to prevent autodoping on the reverse surface thereof, for growing a vapor-phase epitaxial layer on the main obverse surface thereof, a width of a chamfer is set for locating an edge-crown occurred in consequence of a vapor-phase epitaxial growth on the chamfer, and a gap of a distance is formed between a periphery of the protecting film and an innermost part of the chamfer on the reverse surface.