-
公开(公告)号：US06727027B2
公开(公告)日：2004-04-27
申请号：US10020987
申请日：2001-12-19
申请人： Tetsushi Tsukamoto , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki , Tsutomu Shinagawa , Satoshi Okazaki
发明人： Tetsushi Tsukamoto , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki , Tsutomu Shinagawa , Satoshi Okazaki
IPC分类号： G03F900
摘要： In the manufacture of a photomask blank, a seed layer of a chromium material containing oxygen, nitrogen and/or carbon is formed on a transparent substrate before a light-shielding film and an antireflective film are deposited thereon. Any film on the seed layer builds up in accordance with fine granular growth, and so the resulting photomask blank has an improved surface roughness, which enables high-sensitivity detection in the process of defect inspection and circuit pattern inspection. By lithographically patterning the photomask blank, a photomask is fabricated.
摘要翻译： 在光掩模坯料的制造中，在其上沉积有遮光膜和抗反射膜之前，在透明基板上形成含有氧，氮和/或碳的铬材料的晶种层。 种子层上的任何薄膜均按照细颗粒生长形成，因此得到的光掩模坯料具有改善的表面粗糙度，这使得能够在缺陷检查和电路图形检查的过程中进行高灵敏度检测。 通过光刻图案化光掩模坯料，制造光掩模。
-
公开(公告)号：US06733930B2
公开(公告)日：2004-05-11
申请号：US10073415
申请日：2002-02-13
申请人： Tsutomu Shinagawa , Tamotsu Maruyama , Hideo Kaneko , Mikio Kojima , Yukio Inazuki , Satoshi Okazaki
发明人： Tsutomu Shinagawa , Tamotsu Maruyama , Hideo Kaneko , Mikio Kojima , Yukio Inazuki , Satoshi Okazaki
IPC分类号： G03F900
摘要： In a photomask blank comprising a light-shielding film and an antireflective film on a transparent substrate, the light-shielding film and the antireflective film are formed of a chromium base material containing oxygen, nitrogen and carbon such that the content of carbon decreases stepwise or continuously from a surface side toward the substrate. The photomask blank can be etched at a controlled rate to produce perpendicular walls. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask have uniform film properties and contribute to the microfabrication of semiconductor ICs of greater density and finer feature size.
摘要翻译： 在透明基板上包括遮光膜和抗反射膜的光掩模坯料中，遮光膜和抗反射膜由含有氧，氮和碳的铬基材料形成，使得碳含量逐步降低或 从表面侧连续地朝向基板。 可以以受控的速率蚀刻光掩模坯料以产生垂直的壁。 通过光刻图案化光掩模坯料制造光掩模。 光掩模坯料和光掩模具有均匀的膜性质，并且有助于具有更大密度和更精细特征尺寸的半导体IC的微细加工。
-
公开(公告)号：US07037625B2
公开(公告)日：2006-05-02
申请号：US10179969
申请日：2002-06-26
IPC分类号： G03F1/00
CPC分类号： G03F1/58 , B32B18/00 , C04B35/16 , C04B35/58007 , C04B35/58042 , C04B35/597 , C04B2235/9653 , C04B2237/34 , C04B2237/36 , C04B2237/704 , G03F1/32
摘要： A phase shift mask blank is composed of a transparent substrate and a phase shift film thereon. The phase shift film is made of at least two types of layer stacked in alternation, each type having a different composition and containing at least one element selected from among metals, silicon, oxygen and nitrogen. The alternately layered film enables a high-quality phase shift mask blank having improved chemical resistance to be achieved.
-
公开(公告)号：US06641958B2
公开(公告)日：2003-11-04
申请号：US09902645
申请日：2001-07-12
申请人： Yukio Inazuki , Tamotsu Maruyama , Mikio Kojima , Hideo Kaneko , Masataka Watanabe , Satoshi Okazaki
发明人： Yukio Inazuki , Tamotsu Maruyama , Mikio Kojima , Hideo Kaneko , Masataka Watanabe , Satoshi Okazaki
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A phase shift mask blank includes a transparent substrate and a phase shift film composed primarily of a metal and silicon. The substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching, such that the etch selectivity B/A is at least 5.0. When a phase shift mask is manufactured from the blank, the substrate is less prone to overetching, providing good controllability and in-plane uniformity of the phase shift in patterned areas. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.
-
公开(公告)号：US06514642B2
公开(公告)日：2003-02-04
申请号：US09790886
申请日：2001-02-23
IPC分类号： G03F900
CPC分类号： G03F1/30 , C23C14/0057 , C23C14/0682 , Y10T428/31678
摘要： In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.
摘要翻译： 在包括曝光透光基板和其上的第二透光区域的相移掩模中，第二透光区域用作移相器，并且由氟掺杂的硅化钼膜或氟掺杂的硅化铬膜 通过使用钼金属，铬金属，硅化钼或硅化铬作为靶的溅射技术形成，SiF2作为反应气体。 移相器对短波长曝光光具有高折射率，能够在最小膜厚度下实现180度相位变化，并且对于这种光也具有良好的稳定性。 相移掩模可用于将半导体集成电路制造成更小的最小特征尺寸和更高的集成度。
-
公开(公告)号：US06503669B2
公开(公告)日：2003-01-07
申请号：US09783322
申请日：2001-02-15
申请人： Hideo Kaneko , Yukio Inazuki , Tamotsu Maruyama , Satoshi Okazaki
发明人： Hideo Kaneko , Yukio Inazuki , Tamotsu Maruyama , Satoshi Okazaki
IPC分类号： G03F900
CPC分类号： G03F1/68 , C03C17/22 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2218/155 , C23C14/0057 , C23C14/06 , G03F1/50
摘要： A photomask blank has at least one layer of chromium base film on a transparent substrate. The chromium base film of chromium oxycarbide (CrCO) or chromium oxynitride carbide (CrCON) is formed by a reactive sputtering technique using chromium or chromium containing O, N or C as the target and a mixture of carbon dioxide gas and an inert gas as the sputtering gas. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask are of quality featuring high uniformity within the substrate plane and ease of control during manufacture.
摘要翻译： 光掩模坯料在透明衬底上具有至少一层铬基膜。 碳氧化铬（CrCO）或氮氧化铬碳化铬（CrCON）的铬基膜通过使用含有O，N或C的铬或铬作为靶的反应溅射技术形成，并且将二氧化碳气体和惰性气体的混合物作为 溅射气体。 通过光刻图案化光掩模坯料制造光掩模。 光掩模坯料和光掩模的质量在基板平面内具有高均匀性，并且在制造期间易于控制。
-
公开(公告)号：US06503668B2
公开(公告)日：2003-01-07
申请号：US09757615
申请日：2001-01-11
申请人： Yukio Inazuki , Hideo Kaneko , Tamotsu Maruyama , Satoshi Okazaki
发明人： Yukio Inazuki , Hideo Kaneko , Tamotsu Maruyama , Satoshi Okazaki
IPC分类号： G03F900
摘要： A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.
摘要翻译： 相移掩模空白在透明基板上具有MoSiOC或MoSiONC的相移膜，并且可选地，在相移膜上具有铬基遮光膜，铬基抗反射膜或两者的多层组合。 包括通过使用含有二氧化碳的溅射气体的反应溅射技术沉积MoSi基相变膜的制造方法产生质量的相移掩模坯料和相移掩模，具有在制造过程中面内均匀性和易于控制的优点。
-
公开(公告)号：US06352801B1
公开(公告)日：2002-03-05
申请号：US09573560
申请日：2000-05-19
申请人： Satoshi Okazaki , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki
发明人： Satoshi Okazaki , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki
IPC分类号： G03F900
摘要： A phase shift mask has a phase shifter formed on a substrate which is transmissive to exposure light. The phase shifter serving as a second light transmissive region is constructed of gadolinium gallium garnet. The shifter film formed under the sputtering conditions capable of restraining the generation of particles causing film defects is homogeneous, and the phase shift mask is of high precision.
摘要翻译： 相移掩模具有形成在对曝光光透射的基板上的移相器。 作为第二透光区域的移相器由钆镓石榴石构成。 在能够抑制引起膜缺陷的颗粒的产生的溅射条件下形成的移位膜是均匀的，并且相移掩模是高精度的。
-
公开(公告)号：US07195846B2
公开(公告)日：2007-03-27
申请号：US10724734
申请日：2003-12-02
摘要： A photomask blank having a film of at least one layer formed on a substrate is manufactured by forming a film on a substrate and irradiating the film with light from a flash lamp. A photomask is manufactured from the thus manufactured photomask blank by forming a patterned resist on the film on the blank by photolithography, etching away those portions of the film which are not covered with the resist, and removing the resist. The photomask blank and photomask have minimized warpage and improved chemical resistance.
摘要翻译： 通过在基板上形成膜并用来自闪光灯的光照射薄膜来制造具有形成在基板上的至少一层的膜的光掩模坯料。 通过光刻法在坯料上的膜上形成图案化的抗蚀剂，蚀刻掉未被抗蚀剂覆盖的膜的那些部分，并除去抗蚀剂，由这样制造的光掩模坯料制造光掩模。 光掩模坯料和光掩模具有最小的翘曲和改善的耐化学性。
-
10.发明授权Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof 有权相移光掩模 - 空白，相移光掩模及其制造方法公开(公告)号：US07622227B2
公开(公告)日：2009-11-24
申请号：US11431550
申请日：2006-05-11
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , Y10T428/31616
摘要： On a substrate that is transparent to exposure light, a phase-shift multilayer film including a stack of two layers of a metal silicide compound is formed. A stabilized oxide layer is formed on the surface of the metal silicide compound layer close to the top surface. The layer close to the substrate (the lower layer) of the phase-shift multilayer film is made of a relatively-metal-rich metal silicide compound, and the upper layer is made of a relatively-metal-poor metal silicide compound. The stabilized oxide layer has a metal-poor composition, and the metal content thereof is equal to or less than one third of the metal content of the lower layer. Thus, the stabilized oxide layer is highly chemically stable and has a high chemical resistance.
摘要翻译： 在对曝光光透明的基板上，形成包括两层金属硅化物的叠层的相移多层膜。 在靠近顶面的金属硅化物层的表面上形成稳定的氧化物层。 相移多层膜的基板（下层）的层由相对富金属的金属硅化物构成，上层由相对不富金属的金属硅化物构成。 稳定的氧化物层具有金属不足的组成，其金属含量等于或小于下层的金属含量的三分之一。 因此，稳定的氧化物层是高度化学稳定的并且具有高的耐化学性。
-
-
-
-
-
-
-
-
-
搜索结果
71 条记录 (耗时 0.027 秒)
