公开(公告)号：US08012654B2

公开(公告)日：2011-09-06

申请号：US12820927

申请日：2010-06-22

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yosuke Kojima ,  Kazuaki Chiba ,  Yuichi Fukushima

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yosuke Kojima ,  Kazuaki Chiba ,  Yuichi Fukushima

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/38 ,  G03F1/46 ,  G03F1/58 ,  G03F1/80 ,  Y10T428/31616

摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

摘要翻译： 提供一种光掩模坯料，其包括设置在透明基板上的耐蚀刻干蚀刻和通过氯干蚀刻除去的蚀刻停止膜，设置在蚀刻停止膜上的遮光膜，并且包括至少一层由 过渡金属/硅材料和设置在遮光膜上的抗反射膜。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。

公开(公告)号：US20100261101A1

公开(公告)日：2010-10-14

申请号：US12820927

申请日：2010-06-22

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yosuke Kojima ,  Kazuaki Chiba ,  Yuichi Fukushima

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yosuke Kojima ,  Kazuaki Chiba ,  Yuichi Fukushima

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/38 ,  G03F1/46 ,  G03F1/58 ,  G03F1/80 ,  Y10T428/31616

摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

公开(公告)号：US20100261099A1

公开(公告)日：2010-10-14

申请号：US12820908

申请日：2010-06-22

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yosuke Kojima ,  Kazuaki Chiba ,  Yuichi Fukushima

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yosuke Kojima ,  Kazuaki Chiba ,  Yuichi Fukushima

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  C23F4/00 ,  G03F1/30 ,  G03F1/46 ,  G03F1/54 ,  G03F1/80 ,  Y10T428/31616

摘要： A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

摘要翻译： 光掩模坯料包括透明基板，沉积在基板上并包含易受氟干蚀刻影响的金属或金属化合物的遮光膜，以及沉积在遮光膜上并包含另一金属或金属化合物的蚀刻掩模膜 到氟干蚀刻。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。

公开(公告)号：US07618753B2

公开(公告)日：2009-11-17

申请号：US11662479

申请日：2005-08-10

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： C23F4/00 ,  G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).

摘要翻译： 在光掩模基板的一个主表面上设置金属膜作为遮光层。 通过含有氧（（Cl + O）基干蚀刻）的基于氯的干蚀刻，不能基本上蚀刻金属膜，并且可以通过不含氧的氯基干法蚀刻（基于Cl的干蚀刻）和氟基 干蚀刻（F-干蚀刻）。 在遮光层上，作为抗反射层的金属化合物膜。 金属化合物膜不能通过不含氧（Cl基）的氯基干蚀刻基本上被蚀刻，并且可以通过含氧（（Cl + O）基）的氯基干蚀刻和氟基干法中的至少一种进行蚀刻 蚀刻（基于F）。

公开(公告)号：US07556892B2

公开(公告)日：2009-07-07

申请号：US11093295

申请日：2005-03-30

申请人： Kimihiro Okada ,  Masahide Iwakata ,  Takashi Haraguchi ,  Mikio Takagi ,  Yuichi Fukushima ,  Hiroki Yoshikawa ,  Toshinobu Ishihara ,  Satoshi Okazaki ,  Yukio Inazuki ,  Tadashi Saga

发明人： Kimihiro Okada ,  Masahide Iwakata ,  Takashi Haraguchi ,  Mikio Takagi ,  Yuichi Fukushima ,  Hiroki Yoshikawa ,  Toshinobu Ishihara ,  Satoshi Okazaki ,  Yukio Inazuki ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  Y10T428/31616

摘要： In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.

摘要翻译： 在包括基板，光吸收膜和移相膜的半色调相移掩模坯料中，光吸收膜在上部区域中具有比在下部的金属元素含量高的分布中的4A族金属元素 地区。 还提供了一种半色调相移掩模坯料，其包括透明基板和具有预选相位差和透射率的单层或多层的半色调相移膜，其中至少一层半色调相移膜含有至少90个原子 硅和多个金属元素，通常为Mo和Zr或Hf。

公开(公告)号：US20070248897A1

公开(公告)日：2007-10-25

申请号：US11785689

申请日：2007-04-19

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yuichi Fukushima

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yuichi Fukushima

IPC分类号： B32B9/00 ,  B32B17/10 ,  B32B17/06 ,  G03F1/00

CPC分类号： G03F1/58 ,  G03F1/32 ,  Y10T428/31616

摘要： A photomask blank has a light-shielding film composed of a single layer of a material containing a transition metal, silicon and nitrogen or a plurality of layers that include at least one layer made of a material containing a transition metal, silicon and nitrogen, and has one or more chrome-based material film. The high transition metal content ensures electrical conductivity, preventing charge-up in the photomask production process, and also provides sufficient chemical stability to cleaning in photomask production. The light-shielding film has a good resistance to dry etching of the chrome-based material film in the presence of chlorine and oxygen, thus ensuring a high processing accuracy.

摘要翻译： 光掩模坯料具有由单层含有过渡金属，硅和氮的材料或多层构成的遮光膜，所述多层包括至少一层由含有过渡金属，硅和氮的材料制成的层，以及 具有一种或多种铬基材料膜。 高过渡金属含量确保电导率，防止光掩模生产过程中的充电，并且还为光掩模生产中的清洁提供足够的化学稳定性。 遮光膜在氯和氧的存在下对铬基材料膜的干蚀刻具有良好的耐蚀性，因此确保高的加工精度。

公开(公告)号：US20140335146A1

公开(公告)日：2014-11-13

申请号：US14117599

申请日：2012-03-26

申请人： Kentaro Uchida ,  Koji Naruse ,  Masashi Takaso ,  Takehiko Mima ,  Osamu Matsushita ,  Takashi Haraguchi ,  Nozomu Nishi

发明人： Kentaro Uchida ,  Koji Naruse ,  Masashi Takaso ,  Takehiko Mima ,  Osamu Matsushita ,  Takashi Haraguchi ,  Nozomu Nishi

IPC分类号： A61K38/18 ,  A61K38/48

CPC分类号： A61K38/1825 ,  A61K38/1808 ,  A61K38/4886 ,  A61L27/3608 ,  A61L27/54 ,  A61L2300/252 ,  A61L2300/414 ,  A61L2430/02 ,  C07K14/33 ,  C07K14/485 ,  C07K2319/00 ,  C07K2319/03 ,  C07K2319/70 ,  C12N9/52

摘要： Provided is a growth factor anchoring type bone graft material, wherein a bone graft substrate exposing at least a collagen fiber is bound to a collagen-binding-site-containing growth factor which contains a growth factor receptor agonist peptide and a collagen-binding peptide. The same can be produced by mixing a bone graft substrate and a collagen-binding-site-containing growth factor which contains a growth factor receptor agonist peptide and a collagen-binding peptide, and is also superior in osteogenic ability.

摘要翻译： 提供了一种生长因子锚定型骨移植材料，其中暴露至少胶原纤维的骨移植基质与含有生长因子受体激动剂肽和胶原结合肽的含胶原结合位点的生长因子结合。 通过混合骨移植基质和含有生长因子受体激动剂肽和胶原结合肽的含有胶原结合位点的生长因子，也可以产生同样的效果，并且成骨能力也优异。

公开(公告)号：US07989124B2

公开(公告)日：2011-08-02

申请号：US12820908

申请日：2010-06-22

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yosuke Kojima ,  Kazuaki Chiba ,  Yuichi Fukushima

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yosuke Kojima ,  Kazuaki Chiba ,  Yuichi Fukushima

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  C23F4/00 ,  G03F1/30 ,  G03F1/46 ,  G03F1/54 ,  G03F1/80 ,  Y10T428/31616

摘要： A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

摘要翻译： 光掩模坯料包括透明基板，沉积在基板上并包含易受氟干蚀刻影响的金属或金属化合物的遮光膜，以及沉积在遮光膜上并包含另一金属或金属化合物的蚀刻掩模膜 到氟干蚀刻。 当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。

公开(公告)号：US07351505B2

公开(公告)日：2008-04-01

申请号：US10968886

申请日：2004-10-21

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Yuichi Fukushima ,  Yoshihiro Ii ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Yuichi Fukushima ,  Yoshihiro Ii ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/84

摘要： In a phase shift mask blank comprising a phase shift multilayer film on a substrate, the phase shift multilayer film consists of at least one layer of light absorption function film and at least one layer of phase shift function film, and the light absorption function film has an extinction coefficient k which increases as the wavelength changes from 157 nm to 260 nm, and has a thickness of up to 15 nm. The phase shift mask blank has minimized wavelength dependency of transmittance and can be processed with a single dry etching gas.

摘要翻译： 在包括基板上的相移多层膜的相移掩模坯料中，相移多层膜由至少一层光吸收功能膜和至少一层相移功能膜构成，光吸收功能膜具有 消光系数k随着波长从157nm变化到260nm而增加，并且具有高达15nm的厚度。 相移掩模空白具有最小化透射率的波长依赖性并且可以用单个干蚀刻气体进行处理。

公开(公告)号：US06774534B2

公开(公告)日：2004-08-10

申请号：US10445064

申请日：2003-05-27

申请人： Toshikatsu Akiba ,  Akihiro Koga ,  Takashi Haraguchi ,  Akihiro Kasahara

发明人： Toshikatsu Akiba ,  Akihiro Koga ,  Takashi Haraguchi ,  Akihiro Kasahara

IPC分类号： H02N100

CPC分类号： G02B7/102 ,  H02N1/004 ,  H04N5/2254 ,  H04N2005/2255

摘要： An electrostatic actuator comprises first and second movable sections and a stator. The stator has a hollow frame into which the movable sections are arranged independently. Driving electrodes are provided on surfaces of the movable sections and holding electrodes are also provided on the opposite surfaces pf the movable section. A driving electrode section is provided on the inner surface of the stator facing the driving electrodes on the movable section. Also, holding electrode sections are provided on the inner surface of the stator facing the holding electrodes on the movable section. Stripes of the electrodes are arranged in a longitudinal direction and each strip is extended in a lateral direction crossing the longitudinal direction, and the holding electrodes are extended in the longitudinal direction.