Forged product and method of making the product
    1.
    发明授权
    Forged product and method of making the product 失效
    锻造产品及制作方法

    公开(公告)号:US07677134B2

    公开(公告)日:2010-03-16

    申请号:US11957612

    申请日:2007-12-17

    摘要: A forged product is made of a magnesium alloy and includes a through hole making portion to make a through hole that runs in a predetermined direction, and a bottom portion that lies on a plane intersecting with the predetermined direction. The through hole includes a first portion that has been formed by a forging process and a second portion that has been formed after the forging process. The second portion of the through hole has shifted toward the bottom portion with respect to the middle of the through hole in the predetermined direction.

    摘要翻译: 锻造产品由镁合金制成,并且包括通孔制造部分以形成沿预定方向延伸的通孔,以及底部位于与预定方向相交的平面上。 通孔包括通过锻造工艺形成的第一部分和在锻造过程之后形成的第二部分。 通孔的第二部分沿着预定方向相对于通孔的中间向底部移动。

    FORGED PRODUCT AND METHOD OF MAKING THE PRODUCT
    3.
    发明申请
    FORGED PRODUCT AND METHOD OF MAKING THE PRODUCT 失效
    锻造产品和制造产品的方法

    公开(公告)号:US20080149231A1

    公开(公告)日:2008-06-26

    申请号:US11957612

    申请日:2007-12-17

    IPC分类号: C22F1/06

    摘要: A forged product is made of a magnesium alloy and includes a through hole making portion to make a through hole that runs in a predetermined direction, and a bottom portion that lies on a plane intersecting with the predetermined direction. The through hole includes a first portion that has been formed by a forging process and a second portion that has been formed after the forging process. The second portion of the through hole has shifted toward the bottom portion with respect to the middle of the through hole in the predetermined direction.

    摘要翻译: 锻造产品由镁合金制成,并且包括通孔制造部分以形成沿预定方向延伸的通孔,以及底部位于与预定方向相交的平面上。 通孔包括通过锻造工艺形成的第一部分和在锻造过程之后形成的第二部分。 通孔的第二部分沿着预定方向相对于通孔的中间向底部移动。

    PROCESS FOR PRODUCING LAMINATED HIGH-DENSITY CULTURED ARTIFICIAL TISSUE, AND LAMINATED HIGH-DENSITY CULTURED ARTIFICIAL TISSUE
    6.
    发明申请
    PROCESS FOR PRODUCING LAMINATED HIGH-DENSITY CULTURED ARTIFICIAL TISSUE, AND LAMINATED HIGH-DENSITY CULTURED ARTIFICIAL TISSUE 审中-公开
    生产层压高密度人造纤维组织的方法和层压高密度培养人造纤维组织

    公开(公告)号:US20110281351A1

    公开(公告)日:2011-11-17

    申请号:US13146367

    申请日:2010-01-28

    IPC分类号: C12N5/071

    摘要: Disclosed is a process for producing an artificial tissue, which comprises a step of providing a liquid flow control member and a mesh member in a flow path through which a cell culture liquid comprising at least one type of animal cells, a collagen-binding cell growth factor and an extracellular matrix component is circulated and cultured to accumulate the extracellular matrix molecule and the animal cells on the surface of the liquid flow control member at a high density, thereby forming a high-density cultured tissue, wherein the liquid flow control member and the mesh member are so arranged in the flow path that these members are in contact with each other or in proximity to each other, and wherein the mesh member is arranged on the back side of the liquid flow control member relative to the direction of the liquid flow. Also disclosed is an artificial tissue produced by the process.

    摘要翻译: 公开了一种生产人造组织的方法,其包括在流路中提供液体流动控制构件和网状构件的步骤,通过该流路将包含至少一种类型的动物细胞的细胞培养液,胶原结合细胞生长 循环和培养细胞因子和细胞外基质组分,以高密度积聚细胞外基质分子和液体流量控制部件表面上的动物细胞,从而形成高密度培养组织,其中液体流动控制部件和 网状构件在流路中被布置成使得这些构件彼此接触或彼此接近,并且其中网状构件相对于液体的方向布置在液体流动控制构件的背面上 流。 还公开了通过该方法生产的人造组织。

    End point detection method applying resonance phenomenon, end point detection apparatus, chemical mechanical polishing apparatus on which the detection apparatus is loaded, and semiconductor device fabricated by the chemical mechanical polishing apparatus
    7.
    发明申请
    End point detection method applying resonance phenomenon, end point detection apparatus, chemical mechanical polishing apparatus on which the detection apparatus is loaded, and semiconductor device fabricated by the chemical mechanical polishing apparatus 审中-公开
    应用共振现象的终点检测方法,终点检测装置,装载有检测装置的化学机械研磨装置以及由化学机械研磨装置制造的半导体装置

    公开(公告)号:US20080156773A1

    公开(公告)日:2008-07-03

    申请号:US11904374

    申请日:2007-09-27

    IPC分类号: C23F1/00

    摘要: To provide an end point detection method applying a resonance phenomenon, an end point detection apparatus, and a chemical mechanical polishing apparatus on which the detection apparatus is loaded for monitoring variation in the thickness of an electrically conductive film in real time, reliably detecting a polishing end point of the electrically conductive film at high accuracy, without generating noise, low power consumption, and capable of reducing the cost.In order to achieve above described objects, the present invention provides an end point detection method applying a resonance phenomenon in which a polishing end point is detected when the electrically conductive film is polished and removed to an appropriate thickness, wherein a sensor 37 composed of an oscillation circuit of the Colpitts type or the like having a planar inductor and a concentrated constant capacitor is used, and the variation in the thickness of the electrically conductive film is monitored in real time from the variation in the oscillation frequency of the sensor 37 caused along with the variation in the thickness of the electrically conductive film opposed to the planar inductor.

    摘要翻译: 为了提供应用共振现象的终点检测方法,终点检测装置和化学机械抛光装置,其上装有检测装置以实时监测导电膜的厚度的变化,可靠地检测抛光 导电膜的终点高精度,不产生噪声,低功耗,并且能够降低成本。 为了实现上述目的,本发明提供一种应用共振现象的端点检测方法,其中当导电膜被抛光并去除到适当的厚度时,其中检测到抛光终点,其中传感器37由 使用具有平面电感器和集中恒定电容器的Colpitts型等的振荡电路,并且根据传感器37的振荡频率的变化实时监测导电膜的厚度变化 导电膜的厚度与平面电感器相对的变化。

    Polishing end point detecting device for wafer polishing apparatus

    公开(公告)号:US06511363B2

    公开(公告)日:2003-01-28

    申请号:US10021007

    申请日:2001-12-19

    IPC分类号: B24B4900

    CPC分类号: B24B37/013 B24B49/12

    摘要: White light from a light source is applied onto a wafer through an observation window which is formed on a polishing pad, and a spectrometric analysis is performed to the light which has been reflected on the wafer, whereby a polishing end point of the wafer is detected. In this case, an amount of the reflected light is measured and brightness of the light source is corrected so that the amount of the reflected light is constant. Thereby, the polishing end point is accurately detected.