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11.发明授权Method of manufacturing high density CIS thin film for solar cell and method of manufacturing thin film solar cell using the same 有权制造太阳能电池用高密度CIS薄膜的方法及使用其制造薄膜太阳能电池的方法公开(公告)号：US08569102B2
公开(公告)日：2013-10-29
申请号：US13695627
申请日：2011-07-19
Applicant: Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
Inventor： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
CPC classification number: H01L31/035209 , B82Y30/00 , C01B19/002 , C01G15/006 , C01P2004/03 , C01P2004/64 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
Abstract: Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.
Abstract translation: 公开了一种高密度CIS薄膜及其制造方法，其包括通过非真空涂覆将CIS纳米粉末，CIGS纳米粉末或CZTS纳米粉末涂覆在基材上，随后在填充有填充元素的纳米粉末之间的空腔进行热处理 如铜，铟，镓，锌，锡等。 将高密度CIS薄膜施加到薄膜太阳能电池的光吸收层，从而提供高效率的薄膜太阳能电池。
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12.发明授权Method and unit for verifying initial state of non-volatile memory device 有权用于验证非易失性存储器件的初始状态的方法和单元公开(公告)号：US07660163B2
公开(公告)日：2010-02-09
申请号：US11208742
申请日：2005-08-23
Applicant: Se-Jin Ahn
Inventor： Se-Jin Ahn
IPC: G11C16/06
CPC classification number: G11C16/34
Abstract: A method of verifying an initial state of a non-volatile memory device, a command for verify an initial state of a unit and a unit address corresponding to the unit received from a memory controller. An initial state of memory cells, which correspond to the unit address, is verified in response to the command. A verification result of the unit is transmitted to the memory controller.
Abstract translation: 一种验证非易失性存储器件的初始状态的方法，用于验证单元的初始状态的命令以及与从存储器控制器接收到的单元相对应的单元地址。 对应于单元地址的存储单元的初始状态根据该命令被验证。 该单元的验证结果被发送到存储器控制器。
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13.发明申请公开(公告)号：US20080229090A1
公开(公告)日：2008-09-18
申请号：US12046888
申请日：2008-03-12
Applicant: Sung-Up Choi , Se-Jin Ahn , Yong-Hyeon Kim
Inventor： Sung-Up Choi , Se-Jin Ahn , Yong-Hyeon Kim
IPC: G06F15/177 , G06F12/02
CPC classification number: G11C7/1045 , G06F9/4401 , G06F12/06 , G06F2212/2022
Abstract: Provided is a memory card device. The memory card device includes a flash memory and a controller. The flash memory includes a boot area storing boot data, and a user area storing user data. The controller accesses the boot area or the user area according to an external command. Boot data can be stored in a memory card integrated in an electronic device. Also, when a host requests an access to boot data/user data stored in the memory card, the boot data/user data can be accessed under control of the controller.
Abstract translation: 提供了一种存储卡装置。 存储卡装置包括闪存和控制器。 闪速存储器包括存储引导数据的引导区域和存储用户数据的用户区域。 控制器根据外部命令访问引导区域或用户区域。 引导数据可以存储在集成在电子设备中的存储卡中。 此外，当主机请求访问存储在存储卡中的引导数据/用户数据时，可以在控制器的控制下访问引导数据/用户数据。
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14.发明申请Method and unit for verifying initial state of non-volatile memory device 有权用于验证非易失性存储器件的初始状态的方法和单元公开(公告)号：US20060044875A1
公开(公告)日：2006-03-02
申请号：US11208742
申请日：2005-08-23
Applicant: Se-Jin Ahn
Inventor： Se-Jin Ahn
IPC: G11C11/34
CPC classification number: G11C16/34
Abstract: A method of verifying an initial state of a non-volatile memory device, a command for verify an initial state of a unit and a unit address corresponding to the unit received from a memory controller. An initial state of memory cells, which correspond to the unit address, is verified in response to the command. A verification result of the unit is transmitted to the memory controller.
Abstract translation: 一种验证非易失性存储器件的初始状态的方法，用于验证单元的初始状态的命令以及与从存储器控制器接收到的单元相对应的单元地址。 对应于单元地址的存储单元的初始状态根据该命令被验证。 该单元的验证结果被发送到存储器控制器。
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