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    THERMALLY ROBUST NEAR-FIELD TRANSDUCER PEG
    15.
    发明申请
    THERMALLY ROBUST NEAR-FIELD TRANSDUCER PEG 有权
    热稳定的近场传感器PEG

    公开(公告)号：US20160351209A1

    公开(公告)日：2016-12-01

    申请号：US15163035

    申请日：2016-05-24

    Applicant: Seagate Technology LLC

    Inventor： Weibin Chen ,  Martin Blaber ,  Tong Zhao ,  Michael Christopher Kautzky ,  John Charles Duda

    IPC: G11B5/31

    CPC classification number: G11B5/314 ,  G11B5/3116 ,  G11B5/3133 ,  G11B2005/0021

    Abstract: A near-field transducer includes first and second stacked base portions having a common outline shape. The second base portion is proximate alight delivery structure. A peg extends from the first base portion towards a media-facing surface. The peg includes a material that is more thermally robust than a plasmonic material of the base portion. The peg has a peg thickness that is less than a thickness of the first base portion. The first base portion has a first recess proximate the peg. The first recess separates the first base portion from the media-facing surface and exposes at least a top side of the peg.

    Abstract translation: 近场换能器包括具有共同轮廓形状的第一和第二堆叠基部。 第二基部是靠近的输送结构。 钉从第一基部向面向介质的表面延伸。 钉子包括比基部的等离子体激元材料更耐热的材料。 钉具有小于第一基部的厚度的钉厚度。 第一基部具有靠近钉的第一凹部。 第一凹部将第一基部与面向介质的表面分开，并且至少暴露出钉的顶侧。

    MAGNETORESISTIVE ELEMENT WITH NANO-CRYSTALLINE SHIELD
    17.
    发明申请
    MAGNETORESISTIVE ELEMENT WITH NANO-CRYSTALLINE SHIELD 有权
    具有纳米晶体屏蔽的磁性元件

    公开(公告)号：US20140269235A1

    公开(公告)日：2014-09-18

    申请号：US13797208

    申请日：2013-03-12

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Jie Gong ,  Ibro Tabakovic ,  Steve Riemer ,  Michael Christopher Kautzky

    IPC: G11B5/11

    CPC classification number: G11B5/112 ,  G01R33/0076 ,  G01R33/025 ,  G01R33/093 ,  G11B5/3912

    Abstract: A magnetoresistive data writer and reader may be generally configured at least with a magnetoresistive (MR) element contacting a magnetic shield that is contrasted of (Ni78Fe22)99.8O0.2 material. The magnetic shield may be formed with an electrodeposition process that uses β-diketones derivatives to form nano-crystalline grain structure after a subsequent annealing at temperatures above 400° C.

    Abstract translation: 磁阻数据写入器和读取器通常可以至少配置与（Ni78Fe22）99.8O0.2材料对比的磁屏蔽接触的磁阻（MR）元件。 磁屏蔽可以用电沉积方法形成，其中使用＆bgr-二酮衍生物在温度高于400℃后进行退火后形成纳米晶粒结构。

    RECORDING HEAD INCLUDING NFT AND HEATSINK
    19.
    发明申请
    RECORDING HEAD INCLUDING NFT AND HEATSINK 有权
    记录头包括NFT和HEATSINK

    公开(公告)号：US20140050057A1

    公开(公告)日：2014-02-20

    申请号：US14062651

    申请日：2013-10-24

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Jie Zou ,  Kaizhong Gao ,  William Albert Challener ,  Mark Henry Ostrowski ,  Venkateswara Rao Inturi ,  Tong Zhao ,  Michael Christopher Kautzky

    IPC: G11B33/14 ,  G11B13/08

    CPC classification number: G11B33/144 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3136 ,  G11B5/314 ,  G11B13/08 ,  G11B2005/0021

    Abstract: An apparatus including a near field transducer positioned adjacent to an air bearing surface, the near field transducer comprising silver (Ag) and at least one other element or compound; a first magnetic pole; and a heat sink positioned between the first magnetic pole and the near field transducer, wherein the heat sink includes: rhodium (Rh) or an alloy thereof; ruthenium (Ru) or an alloy thereof; titanium (Ti) or an alloy thereof; tantalum (Ta) or an alloy thereof; tungsten (W) or an alloy thereof; borides; nitrides; transition metal oxides; or palladium (Pd) or an alloy thereof.

    Abstract translation: 一种包括靠近空气轴承表面定位的近场换能器的装置，所述近场换能器包括银（Ag）和至少一种其它元件或化合物; 第一个磁极; 以及位于所述第一磁极和所述近场换能器之间的散热器，其中所述散热器包括：铑（Rh）或其合金; 钌（Ru）或其合金; 钛（Ti）或其合金; 钽（Ta）或其合金; 钨（W）或其合金; 硼化物 氮化物 过渡金属氧化物; 或钯（Pd）或其合金。

    OPTICAL DEVICES INCLUDING ASSIST LAYERS
    20.
    发明申请
    OPTICAL DEVICES INCLUDING ASSIST LAYERS 有权
    光学设备，包括辅助层

    公开(公告)号：US20130279313A1

    公开(公告)日：2013-10-24

    申请号：US13795649

    申请日：2013-03-12

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Xiaoyue Huang ,  Michael Christopher Kautzky

    IPC: G02B6/036 ,  G11B13/04

    CPC classification number: G02B6/036 ,  G02B6/122 ,  G11B5/314 ,  G11B13/04 ,  G11B2005/0021

    Abstract: A waveguide including a first cladding layer, the first cladding layer having an index of refraction, n3; an assist layer, the assist layer having an index of refraction, n2, and the assist layer including ASixOy, wherein A is selected from: Ta, Ti, Nb, Hf, Zr, and Y, x is from about 0.5 to about 2.0, y is from about 3.5 to about 6.5, and the atomic ratio of A/A+Si in ASixOy is from about 0.2 to about 0.7; and a core layer, the core layer including a material having an index of refraction, n1, wherein n1 is greater than n2 and n3, and n2 is greater than n3.

    Abstract translation: 包括第一包层的波导，所述第一包层具有折射率n3; 辅助层，辅助层具有折射率n2，辅助层包括ASixOy，其中A选自：Ta，Ti，Nb，Hf，Zr和Y，x为约0.5至约2.0， y为约3.5至约6.5，并且ASixOy中的A / A + Si的原子比为约0.2至约0.7; 芯层，芯层包括具有折射率n1的材料，其中n1大于n2和n3，n2大于n3。

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