公开(公告)号：US11258142B2

公开(公告)日：2022-02-22

申请号：US16809047

申请日：2020-03-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki Miyake

IPC: H01M50/543 ,  H01M10/04 ,  H01M50/557

Abstract: A secondary battery with a novel structure that can be bent repeatedly is provided. In the secondary battery, an exterior body includes a front surface, a back surface, a first sealing portion, and a second sealing portion. The front surface includes a first long side, a second long side, a third side, and a fourth side. The third side and the fourth side face each other. The third side and the fourth side are substantially perpendicular to the first long side. The front surface includes a third sealing portion. The first sealing portion is along the third side. The second sealing portion is along the fourth side. The third sealing portion includes a region overlapping with the first sealing portion and a region overlapping with the second sealing portion. At least one of the first terminal and the second terminal overlaps with the first sealing portion.

公开(公告)号：US11237445B2

公开(公告)日：2022-02-01

申请号：US16732445

申请日：2020-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi Umezaki ,  Hiroyuki Miyake

IPC: G02F1/1368 ,  G02F1/1362 ,  G09G3/20 ,  G09G3/3275 ,  G09G3/34 ,  G09G3/36 ,  H01L27/12 ,  H01L29/423 ,  G09G3/3233 ,  G09G3/3266 ,  H01L27/15 ,  H01L27/32

Abstract: An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootstrap transistor. When the start signal is input, a potential is supplied to the gate electrode of the transistor through the switch, and the transistor is turned off. The transistor is turned off, so that leakage of a charge from the gate electrode of the bootstrap transistor can be prevented. Accordingly, time for storing a charge in the gate electrode of the bootstrap transistor can be shortened, and high-speed operation can be performed.

公开(公告)号：US11204658B2

公开(公告)日：2021-12-21

申请号：US15784550

申请日：2017-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Takahiro Fukutome

IPC: G06F3/041 ,  G06F3/044 ,  G06F3/045 ,  G06F3/047 ,  G02F1/1333

Abstract: Sensing time of a touch sensor is shortened to increase responsiveness of touch sensing. A display device includes a gate driver, a plurality of touch sensors, and a plurality of touch wirings. The gate driver has a function of supplying a scan signal to the plurality of touch wirings at the same timing, and the touch sensors in different positions sense a plurality of touches at the same timing. In this manner, the responsiveness of touch sensing is increased. The gate driver has a function of controlling a scan signal for refreshing display and a scan signal used by the touch sensor for sensing.

公开(公告)号：US11107838B2

公开(公告)日：2021-08-31

申请号：US16391877

申请日：2019-04-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/417 ,  H01L29/423 ,  H01L29/10 ,  H01L29/45 ,  H01L29/24 ,  G09G3/20 ,  G11C19/28 ,  H01L29/786 ,  H01L27/32

Abstract: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

公开(公告)号：US11075533B2

公开(公告)日：2021-07-27

申请号：US16658194

申请日：2019-10-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Minoru Takahashi ,  Junpei Momo ,  Hiroyuki Miyake ,  Kei Takahashi

IPC: H02J7/04 ,  H02J7/16 ,  H02J7/00 ,  H01M10/44 ,  B60L50/15 ,  B60L53/10 ,  B60L58/25 ,  H01M4/58 ,  H01M4/587 ,  H01M10/0525

Abstract: A lithium ion secondary battery includes a positive electrode including a positive electrode active material layer containing lithium iron phosphate, a negative electrode including a negative electrode active material layer containing graphite, and an electrolyte including a lithium salt and a solvent including ethylene carbonate and diethyl carbonate between the positive electrode and the negative electrode. When the battery temperature of the lithium ion secondary battery or the temperature of an environment in which the lithium ion secondary battery is used is T and given temperatures are T1 and T2 (T1

公开(公告)号：US10475819B2

公开(公告)日：2019-11-12

申请号：US16039869

申请日：2018-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Kenichi Okazaki ,  Masahiko Hayakawa ,  Shinpei Matsuda

IPC: G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1343

Abstract: A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided. Further, a semiconductor device including a transistor having excellent electrical characteristics is provided. The semiconductor device includes a transistor having a dual-gate structure in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode; gate insulating films are provided between the oxide semiconductor film and the first gate electrode and between the oxide semiconductor film and the second gate electrode; and in the channel width direction of the transistor, the first or second gate electrode faces a side surface of the oxide semiconductor film with the gate insulating film between the oxide semiconductor film and the first or second gate electrode.

公开(公告)号：US10372163B2

公开(公告)日：2019-08-06

申请号：US14724336

申请日：2015-05-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: G06F3/045 ,  G06F3/044 ,  G06F1/16 ,  G06F3/02 ,  G06F3/0488 ,  G09F9/30

Abstract: A novel input device that is highly convenient or reliable is provided. Alternatively, a novel input device is provided. The input device includes a sensor panel that can be folded, a housing that enables the sensor panel to be folded, and a sensing portion that senses the folded state of the sensor panel and supplies folding information. Furthermore, the sensor panel includes a signal line extending in the column direction, and a part of one signal line is placed to face another part of the signal line in the folded state.

公开(公告)号：US10269888B2

公开(公告)日：2019-04-23

申请号：US15436149

申请日：2017-02-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/24 ,  H01L29/786

Abstract: A display device having a high aperture ratio and including a capacitor that can increase capacitance is provided. A pair of electrodes of the capacitor is formed using a light-transmitting conductive film. One of the electrodes of the capacitor is formed using a metal oxide film, and the other of the electrodes of the capacitor is formed using a light-transmitting conductive film. With such a structure, light can be emitted to the capacitor side when an organic insulating film is provided over the capacitor and a pixel electrode of a light-emitting element is formed over the organic insulating film. Thus, the capacitor can transmit light and can overlap the light-emitting element. Consequently, the aperture ratio and capacitance can be increased.

公开(公告)号：US10262570B2

公开(公告)日：2019-04-16

申请号：US15056279

申请日：2016-02-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki Miyake

IPC: G09G3/20 ,  G09G3/3233 ,  H05B33/08

Abstract: A semiconductor device includes a transistor including a first gate (front gate) and a second gate (back gate) overlapping with each other with a semiconductor film therebetween, and a display element. The transistor and the display element are electrically connected to each other. The first gate is supplied with one of 2N−k potentials. The second gate is supplied with one of 2k potentials. One of 2N−k potentials and one of 2k potentials are obtained in such a manner that N-bit digital data is divided into (N−k)-bit digital data and k-bit digital data and they are subjected to D/A conversion. At this time, the total number of gray level power supply lines used for D/A conversion is equal to the sum of 2N−k and 2k. This is smaller than 2N, which the total number of the gray level power supply lines usually needed for D/A conversion of N-bit digital data.

公开(公告)号：US10236492B2

公开(公告)日：2019-03-19

申请号：US15013546

申请日：2016-02-02

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Hiroyuki Miyake

IPC: H01M2/30 ,  H01M2/02 ,  H01M10/0525 ,  H01M2/06

Abstract: A positive electrode and a negative electrode include stress relaxation regions each of which includes a tab and a lead of each electrode and may include a region divided by a slit provided for the electrode. In the case where the stress relaxation region includes a tab and a lead, the length of the stress relaxation region is 20% or more and 50% or less of the sum of the lengths of the lead and the electrode not overlapping with the lead in an inner region of a secondary battery. In the case where the stress relaxation region further includes a region divided by the slit, the length of the stress relaxation region is 20% or more and 95% or less of the sum of the lengths of the lead and the electrode not overlapping with the lead in an inner region of a secondary battery.