公开(公告)号：US09653479B2

公开(公告)日：2017-05-16

申请号：US15072076

申请日：2016-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Miyairi ,  Yuichi Sato ,  Yuji Asano ,  Tetsunori Maruyama ,  Tatsuya Onuki ,  Shuhei Nagatsuka

IPC: H01L21/00 ,  H01L29/78 ,  H01L27/12 ,  H01L29/786 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L29/16

CPC classification number: H01L27/1225 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76885 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53295 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1207 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/16 ,  H01L29/45 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.