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11.发明授权公开(公告)号：US07496488B2
公开(公告)日：2009-02-24
申请号：US10997539
申请日：2004-11-23
申请人： Patrick Jenny , Seong Lee , Hamdi A. Tchelepi
发明人： Patrick Jenny , Seong Lee , Hamdi A. Tchelepi
CPC分类号： E21B49/00 , E21B43/00 , G01V11/00 , G06F17/5018 , G06F2217/16
摘要： A multi-scale finite-volume (MSFV) method to solve elliptic problems with a plurality of spatial scales arising from single or multi-phase flows in porous media is provided. The method efficiently captures the effects of small scales on a coarse grid, is conservative, and treats tensor permeabilities correctly. The underlying idea is to construct transmissibilities that capture the local properties of a differential operator. This leads to a multi-point discretization scheme for a finite-volume solution algorithm. Transmissibilities for the MSFV method are preferably constructed only once as a preprocessing step and can be computed locally.
摘要翻译： 提供了一种多尺度有限体积（MSFV）方法，用于解决多孔介质中单相或多相流产生的多个空间尺度的椭圆问题。 该方法有效地捕获了小格子对粗网格的影响，是保守的，并且正确地对待张量渗透率。 基本思想是构建捕获差分算子的局部属性的透射率。 这导致了用于有限体积解算法的多点离散化方案。 MSFV方法的透射优选仅作为预处理步骤构造一次，并且可以在本地计算。
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公开(公告)号：US20070193893A1
公开(公告)日：2007-08-23
申请号：US10592028
申请日：2005-03-08
申请人： Jeong-Min Lee , Seong Lee
发明人： Jeong-Min Lee , Seong Lee
IPC分类号： B65D25/08
CPC分类号： B65D51/2878 , B65D51/2864 , Y10S215/08
摘要： A cap assembly that can be associated with a container storing a primary material includes a lid fixed on a top of the container and having an exhausting portion projected upward, a cap main body detachably coupled to the exhausting portion of the lid and having a storage tube extending downward to define a storage chamber for storing a secondary material, and an inner cap body detachably coupled to the storage tube.
摘要翻译： 可以与容纳主要材料的容器相关联的盖组件包括固定在容器的顶部上并具有向上突出的排出部分的盖，可拆卸地联接到盖的排出部分的盖主体，并具有储存管 向下延伸以限定用于存储次级材料的储存室，以及可拆卸地联接到储存管的内盖主体。
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公开(公告)号：US20070114540A1
公开(公告)日：2007-05-24
申请号：US11600870
申请日：2006-11-17
申请人： Seong Lee , Kyeong Min , Soo Kim , Min Kim
发明人： Seong Lee , Kyeong Min , Soo Kim , Min Kim
IPC分类号： H01L33/00
摘要： Disclosed herein is a nitride semiconductor light emitting device, which comprises plural active layers emitting light of different wavelengths. The device comprises p-type and n-type nitride layers, and a plurality of active layers sequentially stacked between the p-type and n-type nitride layers to emit light having different wavelengths. The active layers comprise at least a first active layer to emit a first wavelength light, and a second active layer to emit a second wavelength light, of which wavelength is longer than that of the first wavelength light. Both the first and second active layers are composed of at least one quantum well layer and a quantum barrier layer alternately arranged, and the first active layer is disposed closer to the p-type nitride layer than the second active layer. The number of quantum well layers of the first active layer is less than that of the second active layer.
摘要翻译： 本文公开了一种氮化物半导体发光器件，其包括发射不同波长的光的多个有源层。 该器件包括p型和n型氮化物层，以及顺序堆叠在p型和n型氮化物层之间以发射具有不同波长的光的多个有源层。 有源层至少包括发射第一波长光的第一有源层和发射波长比第一波长光长的第二波长光的第二有源层。 第一和第二有源层都由交替布置的至少一个量子阱层和量子势垒层构成，并且第一有源层设置成比第二有源层更靠近p型氮化物层。 第一有源层的量子阱层的数量小于第二有源层的量子阱层的数量。
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14.发明申请Laser induced thermal imaging apparatus and laser induced thermal imaging method 有权激光诱导热成像设备和激光诱导热成像方法公开(公告)号：US20070103920A1
公开(公告)日：2007-05-10
申请号：US11512991
申请日：2006-08-28
IPC分类号： B60Q1/124
CPC分类号： B41J2/325 , H01L51/0013
摘要： A laser induced thermal imaging apparatus for imaging an imaging layer of a donor film on an acceptor substrate. The laser induced thermal imaging apparatus includes: a substrate stage having an electromagnet, and adapted to receive an acceptor substrate having a pixel area of the organic light emitting device and a donor film including the organic light emitting layer to be imaged on the pixel area; a laser oscillator for irradiating a laser on the donor film; a contact frame adapted to be located between the substrate stage and the laser oscillator and including an opening portion of a pattern corresponding to a part to be imaged of the donor film and a permanent magnet for forming a magnetic force with the substrate stage; and a contact frame moving mechanism for moving the contact frame toward the substrate stage.
摘要翻译： 激光诱导热成像装置，用于对受主衬底上的供体膜的成像层进行成像。 激光感应热成像装置包括：具有电磁体的衬底台，并且适于接收具有有机发光器件的像素面积的受主衬底和包括要在像素区域上成像的有机发光层的施主膜; 用于在供体膜上照射激光的激光振荡器; 接触框架，其适于位于所述衬底台和所述激光振荡器之间，并且包括与所述供体膜的要成像的部分相对应的图案的开口部分和用于与所述衬底台形成磁力的永磁体; 以及用于将接触框架朝向基板台移动的接触框架移动机构。
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公开(公告)号：US20070048658A1
公开(公告)日：2007-03-01
申请号：US11511021
申请日：2006-08-28
申请人： Tae Kang , Jin Kim , Mu Kim , Sun Kim , Noh Kwak , Sang Lee , Seong Lee , Seung Lee , Sok Noh , Jin Seong , Myung Song , Yeun Sung , Byeong Yoo
发明人： Tae Kang , Jin Kim , Mu Kim , Sun Kim , Noh Kwak , Sang Lee , Seong Lee , Seung Lee , Sok Noh , Jin Seong , Myung Song , Yeun Sung , Byeong Yoo
IPC分类号： G03C8/00
CPC分类号： B41M5/265 , B41M5/38221 , H01L51/0013
摘要： A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.
摘要翻译： 公开了一种激光诱导热成像（LITI）装置和使用其的电子装置的制造方法。 LITI装置包括腔室，衬底支撑件，接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。 磁力由形成在LITI装置的两个部件中的磁性材料产生，该两个部件是间隔开的中间转印层和中间装置的表面。 在LITI装置的以下两个部件中形成磁体或磁性材料：1）中间装置和薄膜供体装置; 2）中间装置和接触框架; 3）基底支撑体和薄膜供体装置; 或4）衬底支撑件和接触框架。
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公开(公告)号：US20070045540A1
公开(公告)日：2007-03-01
申请号：US11511205
申请日：2006-08-28
申请人： Tae Kang , Jin Kim , Mu Kim , Sun Kim , Noh Kwak , Sang Lee , Seong Lee , Seung Lee , Sok Noh , Jin Seong , Myung Song , Yeun Sung , Byeong Yoo
发明人： Tae Kang , Jin Kim , Mu Kim , Sun Kim , Noh Kwak , Sang Lee , Seong Lee , Seung Lee , Sok Noh , Jin Seong , Myung Song , Yeun Sung , Byeong Yoo
IPC分类号： G02F1/01
CPC分类号： B41M5/265 , B41M5/38221 , H01L51/0013
摘要： A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.
摘要翻译： 公开了一种激光诱导热成像（LITI）装置和使用其的电子装置的制造方法。 LITI装置包括腔室，衬底支撑件，接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。 磁力由形成在LITI装置的两个部件中的磁性材料产生，该两个部件是间隔开的中间转印层和中间装置的表面。 在LITI装置的以下两个部件中形成磁体或磁性材料：1）中间装置和薄膜供体装置; 2）中间装置和接触框架; 3）基底支撑体和薄膜供体装置; 或4）衬底支撑件和接触框架。
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17.发明申请Method for improving conversion rate of oil soluble unsaturated lipids into water-soluble lipids 失效将油溶性不饱和脂质转化率提高为水溶性脂质的方法公开(公告)号：US20060228322A1
公开(公告)日：2006-10-12
申请号：US11388417
申请日：2006-03-24
申请人： Seong Lee , Soon-Kee Sung , Sung Kim , Jung Yi
发明人： Seong Lee , Soon-Kee Sung , Sung Kim , Jung Yi
IPC分类号： C07C237/02 , A61K8/46
CPC分类号： C11C3/00 , C07C51/412 , C07C57/03 , C07C57/12
摘要： Disclosed relates to a method for improving a conversion rate of oil soluble unsaturated lipids into water-soluble lipids and, more particularly, to a method for improving a conversion rate of oil soluble unsaturated lipids into water-soluble lipids that forms an unsaturated lipid-chloride derivative having an increased reaction activity by using a pyridine-thionyl chloride as a catalyst, not directly causing a reaction between the unsaturated lipids and amino acids, or that applies an emulsifier to cause a reaction between the unsaturated lipids and amino acids so as to minimize the size of lipid particles to a nano-size of less than 50 nm, thus improving the reaction conversion rate to more than 99%.
摘要翻译： 本发明涉及提高油溶性不饱和脂质转化为水溶性脂质的转化率的方法，更具体地说，涉及提高油溶性不饱和脂质转化成形成不饱和脂质氯化物的水溶性脂质的转化率的方法 通过使用吡啶 - 亚硫酰氯作为催化剂具有增加的反应活性的衍生物，不直接引起不饱和脂和氨基酸之间的反应，或者使用乳化剂引起不饱和脂和氨基酸之间的反应，从而使 脂质颗粒的尺寸为纳米尺寸小于50nm，从而将反应转化率提高到99％以上。
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18.发明申请公开(公告)号：US20060125041A1
公开(公告)日：2006-06-15
申请号：US11296152
申请日：2005-12-06
IPC分类号： H01L27/095
CPC分类号： H01L29/66659 , H01L21/26586 , H01L21/28052 , H01L21/28202 , H01L29/495 , H01L29/518 , H01L29/665 , H01L29/66643 , H01L29/7835 , H01L29/7839
摘要： A transistor using impact ionization and a method of manufacturing the same are provided. A gate dielectric layer, a gate, and first and second spacers are formed on a semiconductor substrate. A first impurity layer is formed spaced from the first spacer and a second impurity layer is formed expanding and overlapping with the second spacer therebelow, by performing slant ion-implantation on the semiconductor substrate using the gate and the first and second spacers as a mask. A source and a drain are formed on the semiconductor substrate to be self-aligned with the first and second spacers, respectively, thereby defining an ionization region between the source and the drain in the semiconductor substrate. The source includes a first silicide layer to form a schottky junction with the ionization region. The drain includes a portion of the second impurity layer overlapping with the second spacer and a second silicide layer which is aligned with the second spacer to form an ohmic contact with the second impurity layer.
摘要翻译： 提供了使用冲击电离的晶体管及其制造方法。 栅极电介质层，栅极以及第一和第二间隔物形成在半导体衬底上。 第一杂质层与第一间隔物隔开形成，并且通过使用栅极和第一和第二间隔物作为掩模在半导体衬底上进行倾斜离子注入，形成第二杂质层与其间的第二间隔物膨胀和重叠。 源极和漏极分别形成在半导体衬底上以与第一和第二间隔物自对准，由此在半导体衬底中的源极和漏极之间限定电离区域。 源包括与电离区形成肖特基结的第一硅化物层。 漏极包括与第二间隔物重叠的第二杂质层的一部分和与第二间隔物对准的第二硅化物层以与第二杂质层形成欧姆接触。
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公开(公告)号：US20060000698A1
公开(公告)日：2006-01-05
申请号：US11048742
申请日：2005-02-03
IPC分类号： H01H19/00
CPC分类号： D06F39/005 , H01H19/025 , Y10T29/49599 , Y10T29/49826 , Y10T29/49885 , Y10T29/49995
摘要： A dial knob of a washing machine is provided. In the dial knob, a dial is inserted into a center part of a knob guard, and a periphery edge of the knob is formed to be lustrous. A lamp window body is securely attached on a rear surface of the knob guard. The knob guard is formed of an aluminum material. Thereafter, a front surface of the knob guard is formed to be lusterless and an edge of the front surface is formed to be lustrous. Finally, the dial is connected to the lamp window body.
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公开(公告)号：US20050285226A1
公开(公告)日：2005-12-29
申请号：US11159733
申请日：2005-06-23
申请人： Seong Lee
发明人： Seong Lee
IPC分类号： H01L27/04 , H01L21/02 , H01L23/522 , H01L27/06 , H01L31/062
CPC分类号： H01L27/0688 , H01L23/5223 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a parallel capacitor of a semiconductor device. According to the present invention, a first capacitor and a second capacitor are formed in different layers of the same region, wherein a metal layer connected to an upper electrode of the first capacitor is formed in the same layer as a metal layer connected to a lower electrode of the second capacitor. Thus, twp capacitors can be connected in parallel only with a metal layer composed of three layers. Accordingly, the present invention is advantageous in that it can reduce process steps for forming multiple metal layers, lower a step and cut manufacture cost.
摘要翻译： 这里公开了半导体器件的并联电容器。 根据本发明，第一电容器和第二电容器形成在相同区域的不同层中，其中连接到第一电容器的上电极的金属层形成在与连接到下层的金属层相同的层中 第二电容器的电极。 因此，两个电容器可以仅与由三层组成的金属层并联连接。 因此，本发明的优点在于可以减少形成多个金属层的工艺步骤，降低步骤并降低制造成本。
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