公开(公告)号：US09721872B1

公开(公告)日：2017-08-01

申请号：US13398646

申请日：2012-02-16

Applicant: Louis W. Nicholls ,  Roger D. St. Amand ,  Jin Seong Kim ,  Woon Kab Jung ,  Sung Jin Yang ,  Robert F. Darveaux

Inventor： Louis W. Nicholls ,  Roger D. St. Amand ,  Jin Seong Kim ,  Woon Kab Jung ,  Sung Jin Yang ,  Robert F. Darveaux

IPC: H01L23/498 ,  H01L21/56 ,  H01L23/48

CPC classification number: H01L23/48 ,  H01L21/4846 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49805 ,  H01L23/49811 ,  H01L23/5389 ,  H01L2224/13025 ,  H01L2224/16227 ,  H01L2224/26175 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/15311 ,  H01L2924/1815 ,  H01L2924/19107

Abstract: A package includes a substrate having an electronic component flip chip mounted thereto by flip chip bumps. The electronic component includes an active surface and an inactive surface. Electrically conductive columns (TSV) extend through the electronic component between the active surface and the inactive surface. A RDL structure is coupled to the inactive surface, the RDL structure redistributing the pattern of the electrically conductive columns at the inactive surface to a pattern of inactive surface RDL lands. The inactive surface RDL lands are exposed through via apertures of a package body. By using the inactive surface of the electronic component to distribute the inactive surface RDL lands, the allowable size of the electronic component is maximized.

公开(公告)号：US09240487B2

公开(公告)日：2016-01-19

申请号：US12266797

申请日：2008-11-07

Applicant: Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Jong-Han Jeong ,  Jin-Seong Park ,  Steve Y. G. Mo

Inventor： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Jong-Han Jeong ,  Jin-Seong Park ,  Steve Y. G. Mo

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/49 ,  H01L27/12 ,  H01L29/417 ,  H01L27/32 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78618

Abstract: A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm3 to have stable electrical property.

Abstract translation: 制造具有氧作为半导体层的化合物半导体的薄膜晶体管的制造方法以及具有薄膜晶体管的有机发光显示器的制造方法包括：在绝缘基板上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅绝缘层上形成包括氧离子的半导体层，并且包括沟道区，源极区和漏极区; 形成源电极和漏电极，分别与源极区域和漏极区域中的半导体层接触; 以及通过涂覆有机材料在半导体层上形成钝化层，其中半导体层的载流子密度保持在1E + 17至1E + 18 / cm3的范围内以具有稳定的电性能。

公开(公告)号：US09035192B2

公开(公告)日：2015-05-19

申请号：US12974476

申请日：2010-12-21

Applicant: Gyu Ho Lee ,  Young Woo Park ,  Il Rae Cho ,  Young Hun Kim ,  Kyoung Soo Park ,  Jin Seong Park ,  Dong Seon Uh ,  Kyung Jin Lee ,  Kwang Jin Jung

Inventor： Gyu Ho Lee ,  Young Woo Park ,  Il Rae Cho ,  Young Hun Kim ,  Kyoung Soo Park ,  Jin Seong Park ,  Dong Seon Uh ,  Kyung Jin Lee ,  Kwang Jin Jung

IPC: H05K1/09 ,  C09J11/04 ,  C09J9/02 ,  H05K3/32 ,  C08K3/00 ,  C08K9/02

CPC classification number: C09J11/04 ,  C08K3/017 ,  C08K9/02 ,  C09J9/02 ,  H05K3/323 ,  H05K2201/0218

Abstract: An anisotropic conductive adhesive composite and film include a binder and conductive particles dispersed in the binder. The conductive particles include a copper core particle and a metal coating layer coated on a surface of the corresponding copper core particle.

Abstract translation: 各向异性导电粘合剂复合物和膜包括粘合剂和分散在粘合剂中的导电颗粒。 导电颗粒包括铜芯颗粒和涂覆在相应的铜芯颗粒的表面上的金属涂层。

公开(公告)号：US08871566B2

公开(公告)日：2014-10-28

申请号：US13289883

申请日：2011-11-04

Applicant: Hyun-soo Shin ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jin-seong Park ,  Hun-jung Lee ,  Jong-han Jeong

Inventor： Hyun-soo Shin ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jin-seong Park ,  Hun-jung Lee ,  Jong-han Jeong

IPC: H01L21/336 ,  G02F1/1368 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78606 ,  G02F1/1368 ,  G02F2201/501 ,  G02F2202/10 ,  H01L27/12 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.

Abstract translation: 薄膜晶体管包括栅电极，栅电极上的第一绝缘层，栅电极上的半导体层，并通过第一绝缘层与栅电极分离，半导体层包括与栅电极相对应的沟道区， 源极区域和漏极区域，在半导体层上的氢扩散阻挡层，覆盖沟道区域的氢扩散阻挡层和暴露源极和漏极区域，以及在源极和漏极区域上以及在源极区域和漏极区域上的第二绝缘层 氢扩散阻挡层，使得氢扩散阻挡层位于第二绝缘层和沟道区之间。

公开(公告)号：US08840302B2

公开(公告)日：2014-09-23

申请号：US13469466

申请日：2012-05-11

Applicant: Na Yun Ko ,  Tae Seung Lee ,  Jin Seong Park

Inventor： Na Yun Ko ,  Tae Seung Lee ,  Jin Seong Park

IPC: G01K7/00 ,  G01K7/22 ,  C04B35/01

CPC classification number: G01K1/08 ,  C04B35/01 ,  C04B35/016 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3267 ,  C04B2235/3272 ,  C04B2235/3279 ,  C04B2235/786 ,  C04B2235/87 ,  G01K7/16 ,  G01K7/22 ,  H01C7/008 ,  Y10T29/49007

Abstract: A composite material for a temperature sensor and a method of manufacturing the temperature sensor using the composite material are provided. The composite material contains four or more kinds of metal oxides combined with highly insulating materials to produce a material with semiconductor-like properties to more accurately measure a temperature at high temperature in the range of 500° C. and above. The sensor includes electrode wires having a predetermined diameter inserted into the metal oxide of the temperature sensor when the metal oxide is press-molded to form the temperature sensor. Through the connection of the electrode wires to the temperature sensor device, disconnection of the electrode wires from the device even at a high temperature.

Abstract translation: 提供了一种用于温度传感器的复合材料和使用该复合材料制造温度传感器的方法。 该复合材料包含与高绝缘材料结合的四种或更多种金属氧化物，以产生具有半导体状特性的材料，以更准确地测量在500℃及以上范围内的高温下的温度。 当金属氧化物被压制成型以形成温度传感器时，该传感器包括插入温度传感器的金属氧化物中的预定直径的电极线。 通过将电极线连接到温度传感器装置，即使在高温下电极线也从装置断开。

公开(公告)号：US20140034882A1

公开(公告)日：2014-02-06

申请号：US14050555

申请日：2013-10-10

Applicant: Youn Jo KO ,  Dong Seon UH ,  Jang Hyun CHO ,  Jin Seong PARK ,  Sang Sik BAE ,  Jin Kyu KIM

Inventor： Youn Jo KO ,  Dong Seon UH ,  Jang Hyun CHO ,  Jin Seong PARK ,  Sang Sik BAE ,  Jin Kyu KIM

IPC: H01B1/12

CPC classification number: H01B1/24 ,  C08L33/12 ,  C08L35/04 ,  C09J9/02 ,  C09J175/16 ,  H01B1/12

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, wherein the anisotropic conductive film has an electrical conductivity of more than 0 μS/cm to about 100 μS/cm.

Abstract translation: 各向异性导电膜包括粘合剂部分，固化部分，引发剂和导电颗粒，其中粘合剂部分包括丁腈橡胶（NBR）树脂和聚氨酯树脂中的至少一种，其中各向异性导电膜具有电 电导率大于0μS/ cm至约100μS/ cm。

公开(公告)号：US20130277660A1

公开(公告)日：2013-10-24

申请号：US13922785

申请日：2013-06-20

Applicant: Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

Inventor： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/45

Abstract: An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

Abstract translation: 一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。 薄膜晶体管包括形成在基板上的栅电极，形成在基板上并覆盖栅电极的栅极绝缘层，形成在栅绝缘层上并覆盖栅电极的氧化物半导体层，形成在源极上的钛层 区域和漏区，以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。 钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻，在它们之间形成稳定的界面结，并阻止铜的扩散。

公开(公告)号：US08537506B2

公开(公告)日：2013-09-17

申请号：US12801712

申请日：2010-06-22

Applicant: Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

Inventor： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

IPC: G11B5/39

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

Abstract: An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

Abstract translation: 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

公开(公告)号：US20130236681A1

公开(公告)日：2013-09-12

申请号：US13785354

申请日：2013-03-05

Applicant: Chang Min LEE ,  Seung Jib CHOI ,  Ji Hye KWON ,  Irina NAM ,  Jin Seong PARK ,  Yeon Soo LEE ,  Kyoung Jin HA

Inventor： Chang Min LEE ,  Seung Jib CHOI ,  Ji Hye KWON ,  Irina NAM ,  Jin Seong PARK ,  Yeon Soo LEE ,  Kyoung Jin HA

IPC: C09D183/06

CPC classification number: C09D183/06 ,  C08G77/20 ,  C08L83/06 ,  C08L2312/06 ,  C09D143/04 ,  Y10T428/23

Abstract: A photocurable composition includes (A) a photocurable monomer and (B) a silicon-containing monomer or oligomer thereof, the silicon-containing monomer being represented by Formula 1

Abstract translation: 光固化性组合物包含（A）光固化性单体和（B）含硅单体或其低聚物，所述含硅单体由式1表示

公开(公告)号：US20130196129A1

公开(公告)日：2013-08-01

申请号：US13803266

申请日：2013-03-14

Applicant: Woo Suk LEE ,  Bong Yong KIM ,  Dong Seon UH ,  Jin Seong PARK ,  Kyoung Soo PARK ,  Woo Jun LIM ,  Kyung Jin LEE

Inventor： Woo Suk LEE ,  Bong Yong KIM ,  Dong Seon UH ,  Jin Seong PARK ,  Kyoung Soo PARK ,  Woo Jun LIM ,  Kyung Jin LEE

IPC: H01R4/04

CPC classification number: H01R4/04 ,  B32B7/12 ,  C09J7/22 ,  C09J7/38 ,  C09J9/02 ,  C09J2201/36 ,  C09J2201/622 ,  Y10T428/24942

Abstract: An anisotropic conductive film includes a first insulating adhesive layer, a conductive adhesive layer, and a second insulating adhesive layer which are sequentially stacked on a base film, wherein an adhesive strength ratio of the second insulating adhesive layer to the first insulating adhesive layer is about 1.1 to about 20.

Abstract translation: 各向异性导电膜包括依次堆叠在基膜上的第一绝缘粘合剂层，导电粘合剂层和第二绝缘粘合剂层，其中第二绝缘粘合剂层与第一绝缘粘合剂层的粘合强度比为约 1.1〜约20。